التفاصيل البيبلوغرافية
| العنوان: |
Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions |
| المؤلفون: |
Xiao Chi (4525252), Rui Guo (134395), Juxia Xiong (5193350), Lizhu Ren (6889013), Xinwen Peng (1700059), Beng Kang Tay (1466809), Jingsheng Chen (2827823) |
| سنة النشر: |
1753 |
| المجموعة: |
Smithsonian Institution: Digital Repository |
| مصطلحات موضوعية: |
Biophysics, Biochemistry, Medicine, Physiology, Biotechnology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, tunable tunneling magnetoresistances, strong electromagnetic coupling, optical measurements combined, enhance magnetoelectric coupling, antiferromagnetic phase transition, 5 , 3 , ferroelectric polarization switching, magnetic circular dichroism, interface magnetoelectric coupling, large ferroelectric modulation, giant electrical modulation, ferroelectric materials, spintronic devices, spin control, resistance state, reconstructions originate, realized due, ray absorption, novel functions, new route, magnetic la |
| الوصف: |
Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La 0.5 Sr 0.5 MnO 3 /BaTiO 3 (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| العلاقة: |
https://figshare.com/articles/journal_contribution/Enhanced_Tunneling_Magnetoresistance_Effect_via_Ferroelectric_Control_of_Interface_Electronic_Magnetic_Reconstructions/17032170Test |
| DOI: |
10.1021/acsami.1c15836.s001 |
| الإتاحة: |
https://doi.org/10.1021/acsami.1c15836.s001Test |
| حقوق: |
CC BY-NC 4.0 |
| رقم الانضمام: |
edsbas.CA9DF263 |
| قاعدة البيانات: |
BASE |
