مؤتمر
Physical degradation of GaN HEMT device observed in TEM during reliability test
| العنوان: | Physical degradation of GaN HEMT device observed in TEM during reliability test |
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| المؤلفون: | Park, S.Y., Floresca, C., Kim, M.J., Chowdhury, U., Jimenes, J.L., Lee, C., Beam, E., Sunier, P., Balistreri, T. |
| المصدر: | 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] |
| بيانات النشر: | IEEE |
| سنة النشر: | 2008 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/rocs.2008.5483616 |
| الإتاحة: | https://doi.org/10.1109/rocs.2008.5483616Test http://xplorestaging.ieee.org/ielx5/4670338/4686639/05483616.pdf?arnumber=5483616Test |
| رقم الانضمام: | edsbas.41086F2 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/rocs.2008.5483616 |
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