يعرض 1 - 10 نتائج من 26 نتيجة بحث عن '"Jiao, G. F."', وقت الاستعلام: 0.76s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Effect of grinding method on the precursor powder of Bi2223 and properties of strip

    المؤلفون: Liu, G Q, Hao, Q B, Zheng, H L, Zhang, S N, Xu, X Y, Jiao, G F, Cui, L J, Wang, P F, Li, C S

    المصدر: Journal of Physics: Conference Series ; volume 1054, page 012042 ; ISSN 1742-6588 1742-6596

    الإتاحة: https://doi.org/10.1088/1742-6596/1054/1/012042Test
    http://stacks.iop.org/1742-6596/1054/i=1/a=012042/pdfTest
    http://stacks.iop.org/1742-6596/1054/i=1/a=012042?key=crossref.fefb1501d1d8832c2267d2a15272f2a3Test

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  2. 2
    دورية أكاديمية
    Microstructure and Critical Current Density of Bi-2212 Single- and Multi-filamentary Wires with Overpressure Heat Treatment Processing

    المؤلفون: Jin, L. H., Xu, X. Y., Feng, J. Q., Liu, G. Q., Jiao, G. F., Zhang, S. N., Hao, Q. B., Li, C. S., Zhang, P. X.

    المصدر: Journal of Superconductivity and Novel Magnetism ; volume 35, issue 11, page 3127-3133 ; ISSN 1557-1939 1557-1947

    مصطلحات موضوعية: Condensed Matter Physics, Electronic, Optical and Magnetic Materials

    الإتاحة: https://doi.org/10.1007/s10948-022-06388-1Test

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  3. 3
    مؤتمر
    Circuit speed timing jitter increase in random logic operation after NBTI stress

    المؤلفون: Jiao, G. F., Lu, J. W., Campbell, J. P., Ryan, J. T., Cheung, K. P., Young, C. D., Bersuker, G.

    المصدر: 2014 IEEE International Reliability Physics Symposium

    الإتاحة: https://doi.org/10.1109/irps.2014.6861103Test
    http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861103.pdf?arnumber=6861103Test

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  4. 4
    مؤتمر
    A reliability model for CMOS circuit based on device degradation

    المؤلفون: Peng, J., Huang, D. M., Jiao, G. F., Li, M. F.

    المصدر: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

    الإتاحة: https://doi.org/10.1109/icsict.2012.6467686Test
    http://xplorestaging.ieee.org/ielx7/6459619/6466666/06467686.pdf?arnumber=6467686Test

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  5. 5
    مؤتمر
    Positive bias temperature instability degradation of InGaAs n-MOSFETs with Al 2 O 3 gate dielectric

    المؤلفون: Jiao, G. F., Cao, W., Xuan, Y., Huang, D. M., Ye, P. D., Li, M. F.

    المصدر: 2011 International Electron Devices Meeting

    الإتاحة: https://doi.org/10.1109/iedm.2011.6131621Test
    http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131621.pdf?arnumber=6131621Test

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  6. 6
    مؤتمر
    Investigation of tunneling field effect transistor reliability

    المؤلفون: Jiao, G. F., Huang, X. Y., Chen, Z. X., Cao, W., Huang, D. M., Yu, H. Y., Singh, N., Lo, G. Q., Kwong, D.-L., Li, Ming-Fu

    المصدر: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

    الإتاحة: https://doi.org/10.1109/icsict.2010.5667426Test
    http://xplorestaging.ieee.org/ielx5/5658734/5667273/05667426.pdf?arnumber=5667426Test

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  7. 7
    مؤتمر
    New degradation mechanisms and reliability performance in tunneling field effect transistors

    المؤلفون: Jiao, G. F., Chen, Z. X., Yu, H. Y., Huang, X. Y., Huang, D. M., Singh, N., Lo, G. Q., Kwong, D.-L., Ming-Fu Li

    المصدر: 2009 IEEE International Electron Devices Meeting (IEDM)

    الإتاحة: https://doi.org/10.1109/iedm.2009.5424234Test
    http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424234.pdf?arnumber=5424234Test

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  8. 8
    دورية أكاديمية
    Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

    المؤلفون: Jiao, G. F., Lu, J. W., Campbell, J. P., Ryan, J. T., Cheung, Kin P., Young, C. D., Bersuker, G.

    المصدر: IEEE Transactions on Device and Materials Reliability ; volume 14, issue 4, page 972-977 ; ISSN 1530-4388 1558-2574

    مصطلحات موضوعية: Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Electronic, Optical and Magnetic Materials

    الإتاحة: https://doi.org/10.1109/tdmr.2014.2354339Test
    http://xplorestaging.ieee.org/ielx7/7298/6971050/06891247.pdf?arnumber=6891247Test

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  9. 9
    دورية أكاديمية
    Fabrication and properties of kilometer level, Nb reinforced, 6 filamentary MgB2 wires

    المؤلفون: Li, C. S., Yan, G., Wang, Q. Y., Jiao, G. F., Sulpice, André, Yang, F., Xiong, X. M., Liu, G. Q., Feng, J. Q., Feng, Y., Zhang, P. X.

    المساهمون: Northwest Institute for Nonferrous Metal Research (NIN), Magnétisme et Supraconductivité (NEEL - MagSup), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

    المصدر: ISSN: 0921-4534.

    مصطلحات موضوعية: MgB2 wires, Nb reinforced, 6+1 Filament, Kilometer level, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con]

    العلاقة: hal-00982721; https://hal.science/hal-00982721Test; BIBCODE: 2013PhyC.494.177L

    الإتاحة: https://doi.org/10.1016/J.PHYSC.2013.04.029Test
    https://hal.science/hal-00982721Test

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  10. 10
    دورية أكاديمية
    Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

    المؤلفون: Cao, Wei, Yao, C. J., Jiao, G. F., Huang, Daming, Yu, H. Y., Li, Ming-Fu

    المصدر: IEEE Transactions on Electron Devices ; volume 58, issue 7, page 2122-2126 ; ISSN 0018-9383 1557-9646

    الإتاحة: https://doi.org/10.1109/ted.2011.2144987Test
    http://xplorestaging.ieee.org/ielx5/16/5896011/05770196.pdf?arnumber=5770196Test

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