يعرض 1 - 8 نتائج من 8 نتيجة بحث عن '"Jiang XB"', وقت الاستعلام: 1.71s تنقيح النتائج
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    دورية أكاديمية
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    دورية أكاديمية
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    دورية أكاديمية
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    مؤتمر

    المساهمون: Jiang, XB (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland., Gold Stand Simulat GSS Ltd, Glasgow G3 7JT, Lanark, Scotland.

    المصدر: SCI

    العلاقة: IEEE International Electron Devices Meeting (IEDM).2015.; 1485268; http://hdl.handle.net/20.500.11897/450246Test; WOS:000380472500181

  6. 6
    دورية أكاديمية

    المساهمون: Jiang, XB (reprint author), Peking Univ, Minist Educ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China., Peking Univ, Minist Educ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China., Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland., Gold Standard Simulat Ltd, Glasgow G12 8QQ, Lanark, Scotland., Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland., Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada.

    المصدر: EI ; SCI

    العلاقة: IEEE TRANSACTIONS ON ELECTRON DEVICES.2015,62,(6),1746-1753.; 1305329; http://hdl.handle.net/20.500.11897/419713Test; WOS:000355405800011

  7. 7
    مؤتمر

    المساهمون: Jiang, XB (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

    المصدر: EI ; SCI

    العلاقة: 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012).; 1054327; http://hdl.handle.net/20.500.11897/292704Test; WOS:000319824700192

  8. 8
    دورية أكاديمية

    المساهمون: Jiang, XB (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

    المصدر: SCI ; EI

    العلاقة: IEEE TRANSACTIONS ON ELECTRON DEVICES.2013,60,(11),3669-3675.; 807715; http://hdl.handle.net/20.500.11897/152234Test; WOS:000326263200009