المؤلفون: Gamov, I., Lyons, J. L., Gärtner, G., Irmscher, K., Richter, E., Weyers, M., Wagner, M. R., Bickermann, M.

مصطلحات موضوعية: Condensed Matter - Materials Science, Physics - Atomic and Molecular Clusters

الوصول الحر: http://arxiv.org/abs/2209.10893Test

المؤلفون: Bonito Oliva, V., Mangelinck, D., Hagedorn, S., Bracht, H., Irmscher, K., Hartmann, C., Vennéguès, P., Albrecht, M.

المصدر: Journal of Applied Physics; 9/7/2023, Vol. 134 Issue 9, p1-9, 9p

مصطلحات موضوعية: SECONDARY ion mass spectrometry, DISLOCATION density, DIFFUSION coefficients, DEPTH profiling, THERMOCHEMISTRY

المؤلفون: Bonito Oliva, V, Mangelinck, D, Hagedorn, S, Bracht, H, Irmscher, K, Hartmann, C, Vennéguès, P, Albrecht, M

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA)

المصدر: ISSN: 0021-8979.

مصطلحات موضوعية: [CHIM]Chemical Sciences, [PHYS]Physics [physics]

العلاقة: hal-04285030; https://hal.science/hal-04285030Test; https://hal.science/hal-04285030/documentTest; https://hal.science/hal-04285030/file/2023_JAP_Dif_Si_AlN_JAP23-AR-02131.pdfTest

الإتاحة: https://doi.org/10.1063/5.0159641Test
https://hal.science/hal-04285030Test
https://hal.science/hal-04285030/documentTest
https://hal.science/hal-04285030/file/2023_JAP_Dif_Si_AlN_JAP23-AR-02131.pdfTest

المؤلفون: Aggoune, W., Eljarrat, A., Nabok, D., Irmscher, K., Zupancic, M., Galazka, Z., Albrecht, M., Koch, C., Draxl, C.

المصدر: Communications Materials

وصف الملف: application/pdf

العلاقة: http://hdl.handle.net/21.11116/0000-000A-28CF-1Test; http://hdl.handle.net/21.11116/0000-000A-28D1-DTest

الإتاحة: http://hdl.handle.net/21.11116/0000-000A-28CF-1Test
http://hdl.handle.net/21.11116/0000-000A-28D1-DTest

المؤلفون: Dadzis, K., Menzel, R., Juda, U., Irmscher, K., Kranert, C., Müller, M., Ehrl, M., Weingärtner, R., Reimann, C., Abrosimov, N., Riemann, H.

مصطلحات موضوعية: ddc:670, Konferenzschrift, carrier lifetime, Crystal growth, defect characterization, silicon

وصف الملف: application/pdf

العلاقة: ESSN:1543-186X; https://oa.tib.eu/renate/handle/123456789/10176Test; http://dx.doi.org/10.34657/9214Test

الإتاحة: https://doi.org/10.34657/921410.1007/s11664-020-08309-1Test
https://oa.tib.eu/renate/handle/123456789/10176Test

المؤلفون: Zimmermann, F., Beyer, J., Beyer, F. C., Gärtner, G., Gamov, I., Irmscher, K., Richter, E., Weyers, M., Heitmann, J.

المصدر: Journal of Applied Physics; 8/7/2021, Vol. 130 Issue 5, p1-7, 7p

مصطلحات موضوعية: LUMINESCENCE, PHOTOLUMINESCENCE, EPITAXY, SPECTROMETRY, GASES

المؤلفون: Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, K., Levchenko, S.V., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., Albrecht, M.

مصطلحات موضوعية: ddc:620, ddc:600, Atomic force microscopy, Density functional theory, Electron mobility, Electronic properties, Electrons, Epitaxial growth, Gallium compounds, High resolution transmission electron microscopy, Interfacial energy, Scanning electron microscopy, Transmission electron microscopy, Electron concentration, Energy minimization, High electron mobility, High resolution scanning transmission electron microscopies, Homoepitaxial growth, Identical conditions, Stacking mismatch boundaries, Structural and electronic properties, Substrates

وصف الملف: application/pdf

العلاقة: ESSN:2166-532X; https://oa.tib.eu/renate/handle/123456789/7072Test; https://doi.org/10.34657/6119Test

الإتاحة: https://doi.org/10.34657/611910.1063/1.5054943Test
https://oa.tib.eu/renate/handle/123456789/7072Test

المؤلفون: Fiedler, A., Schewski, R., Galazka, Z., Irmscher, K.

مصطلحات موضوعية: ddc:540, ddc:620, ddc:660, Gallium compounds, Absolute values, Capacitor structures, Increasing temperatures, Monoclinic crystal structure, Principal planes, Static dielectric constants, Temperature range, Test frequencies, Crystal structure

وصف الملف: application/pdf

العلاقة: ESSN:2162-8777; https://oa.tib.eu/renate/handle/123456789/6914Test; https://doi.org/10.34657/5961Test

الإتاحة: https://doi.org/10.34657/596110.1149/2.0201907jssTest
https://oa.tib.eu/renate/handle/123456789/6914Test

المؤلفون: Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, A., Levchenko, S., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., Albrecht, M.

المصدر: APL Materials

وصف الملف: application/pdf

العلاقة: http://hdl.handle.net/21.11116/0000-0002-D0BF-CTest; http://hdl.handle.net/21.11116/0000-0003-6584-6Test

الإتاحة: https://doi.org/10.1063/1.5054943Test
http://hdl.handle.net/21.11116/0000-0002-D0BF-CTest
http://hdl.handle.net/21.11116/0000-0003-6584-6Test

المؤلفون: Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, A., Levchenko, S. V., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., Albrecht, M.

المساهمون: Deutsche Forschungsgemeinschaft, Leibniz-Gemeinschaft

المصدر: APL Materials ; volume 7, issue 2 ; ISSN 2166-532X

الإتاحة: https://doi.org/10.1063/1.5054943Test