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1دورية أكاديمية
المؤلفون: Howell, Robert S.
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2دورية أكاديمية
المؤلفون: Shaji, Akhil Kumar, Uren, Michael J, Parke, Justin A., Henry, H George, Howell, Robert S., Kuball, Martin
المصدر: Shaji , A K , Uren , M J , Parke , J A , Henry , H G , Howell , R S & Kuball , M 2023 , ' AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach ' , Semiconductor Science and Technology , vol. 38 , no. 7 , 075009 . https://doi.org/10.1088/1361-6641/acd271Test
مصطلحات موضوعية: /dk/atira/pure/core/keywords/cdtr, CDTR
الإتاحة: https://doi.org/10.1088/1361-6641/acd271Test
https://hdl.handle.net/1983/862f783b-5172-4fe1-9103-9e7698a38395Test
https://research-information.bris.ac.uk/en/publications/862f783b-5172-4fe1-9103-9e7698a38395Test -
3دورية أكاديمية
المؤلفون: Kumar, Akhil S., Uren, Michael J, Smith, Matthew D, Kuball, Martin, Parke, Justin, Henry, H George, Howell, Robert S.
المساهمون: Connor, Chris
المصدر: Kumar , A S , Uren , M J , Smith , M D , Kuball , M , Parke , J , Henry , H G & Howell , R S 2023 , Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs . in C Connor (ed.) , 2023 IEEE International Reliability Physics Symposium (IRPS) . IEEE Explore , 2023 IEEE International Reliability Physics Symposium (IRPS) , Monterey, California , United States , 26/03/23 . https://doi.org/10.1109/IRPS48203.2023.10118346Test
مصطلحات موضوعية: /dk/atira/pure/core/keywords/cdtr, CDTR, gallium nitride, SLCFET, TDDB, lifetime, reliability, degradation, step-stressing, noise-analysis, 3D-TCAD, percolation theory, traps
وصف الملف: application/pdf
الإتاحة: https://doi.org/10.1109/IRPS48203.2023.10118346Test
https://hdl.handle.net/1983/24c59c06-bea9-4a67-a2fa-dff36f911483Test
https://research-information.bris.ac.uk/en/publications/24c59c06-bea9-4a67-a2fa-dff36f911483Test
https://research-information.bris.ac.uk/ws/files/386856989/Kumar_et_al_2023_Accepted_manuscript_Dielectric_Thickness_and_Fin_Width_Dependent_OFF-State_Degradation_in_AlGaNGaN_SLCFETs.pdfTest -
4دورية أكاديمية
المؤلفون: Kumar, Akhil S, Uren, Michael J, Parke, Justin, Henry, H George, Howell, Robert S, Kuball, Martin
المصدر: Semiconductor Science and Technology ; volume 38, issue 7, page 075009 ; ISSN 0268-1242 1361-6641
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10دورية
المؤلفون: Kumar, Akhil S., Uren, Michael J., Pomeroy, James W., Smith, Matthew D., Afroz, Shamima, Vasen, Timothy, Howell, Robert S., Kuball, Martin
المصدر: IEEE Electron Device Letters; November 2023, Vol. 44 Issue: 11 p1821-1824, 4p