نتائج البحث - "Hatakeyama, Tetsuo"

1

تقرير

Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs

المؤلفون: Hatakeyama, Tetsuo, Hirai, Hirohisa, Simetani, Mitsuru, Okamoto, Dai, Okamoto, Mitsuo, Harada, Shinsuke

مصطلحات موضوعية: Physics - Applied Physics

الوصول الحر: http://arxiv.org/abs/2201.03821Test

View record in Arxiv

2

تقرير

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

المؤلفون: Hatakeyama, Tetsuo, Kiuchi, Yuji, Sometani, Mitsuru, Harada, Shinsuke, Okamoto, Dai, Yano, Hiroshi, Yonezawa, Yoshiyuki, Okumura, Hajime

مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter

الوصول الحر: http://arxiv.org/abs/1703.00615Test

View record in Arxiv

3

دورية أكاديمية

First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO 2 interface

المؤلفون: Matsuda, Shun, Akiyama, Toru, Hatakeyama, Tetsuo, Shiraishi, Kenji, Nakayama, Takashi

المصدر: Japanese Journal of Applied Physics ; volume 63, issue 2, page 02SP69 ; ISSN 0021-4922 1347-4065

الإتاحة: https://doi.org/10.35848/1347-4065/ad1897Test

View record in BASE

4

تقرير

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

المؤلفون: Hatakeyama, Tetsuo, Sometani, Mitsuru, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

مصطلحات موضوعية: Condensed Matter - Materials Science

الوصول الحر: http://arxiv.org/abs/1409.7170Test

View record in Arxiv

5

دورية أكاديمية

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

المؤلفون: Fujita, Eigo, Sometani, Mitsuru, Hatakeyama, Tetsuo, Harada, Shinsuke, Yano, Hiroshi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

المصدر: AIP Advances ; volume 8, issue 8 ; ISSN 2158-3226

الإتاحة: https://doi.org/10.1063/1.5034048Test

View record in BASE

6

مؤتمر

Negative Bias Temperature Instability in 4H-SiC MOSFETs Investigated by On-the-fly Methods

المؤلفون: Okamoto, Dai, Sometani, Mitsuru, Hirai, Hirohisa, Okamoto, Mitsuo, Hatakeyama, Tetsuo

المصدر: 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK)

الإتاحة: https://doi.org/10.1109/imfedk53601.2021.9637600Test
http://xplorestaging.ieee.org/ielx7/9637505/9637517/09637600.pdf?arnumber=9637600Test

View record in BASE

7

Patent

Semiconductor device

View record in USPTO Patent Grants

8

دورية أكاديمية

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

المؤلفون: Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime

المساهمون: Japan Society for the Promotion of Science

المصدر: Journal of Applied Physics ; volume 117, issue 2 ; ISSN 0021-8979 1089-7550

الإتاحة: https://doi.org/10.1063/1.4905916Test

View record in BASE

9

دورية أكاديمية

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

المؤلفون: Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki

المساهمون: Japan Society for the Promotion of Science

المصدر: Japanese Journal of Applied Physics ; volume 60, issue 6, page 060901 ; ISSN 0021-4922 1347-4065

الإتاحة: https://doi.org/10.35848/1347-4065/abff38Test

View record in BASE

10

Patent

High-voltage semiconductor device

View record in USPTO Patent Grants

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