المؤلفون: Hao RT (Hao Ruiting), Deng SK (Deng Shukang), Shen LX (Shen Lanxian), Yang PZ (Yang Peizhi), Tu JL (Tu Jielei), Liao H (Liao Hua), Xu YQ (Xu Yingqiang), Niu ZC (Niu Zhichuan), Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn

مصطلحات موضوعية: Gallium Arsenide, Gallium Antimonide, Gallium Antimonide/aluminum Antimonide, Superlattices, Molecular Beam Epitaxy, Vapor-phase Epitaxy, Surface-morphology, Growth, Temperature, Relaxation, Detectors, Gaas(001), Mocvd, Films, 半导体材料, metallic superlattices, atomic layer deposition, vapor phase epitaxy, surface contamination, development, photography--films, finite volume method, gaas, arseniures de gallium, galliumarsenid, antimonides de gallium, galliumantimonid, multilayers, compositionally modulated metallic, optical superlattices

العلاقة: THIN SOLID FILMS; Hao RT (Hao Ruiting), Deng SK (Deng Shukang), Shen LX (Shen Lanxian), Yang PZ (Yang Peizhi), Tu JL (Tu Jielei), Liao H (Liao Hua), Xu YQ (Xu Yingqiang), Niu ZC (Niu Zhichuan).Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers.THIN SOLID FILMS,2010,519(1):228-230; http://ir.semi.ac.cn/handle/172111/20681Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/20681Test

المؤلفون: Hao RT (Hao Ruiting), Xu YQ (Xu Yingqiang), Zhou ZQ (Zhou Zhiqiang), Ren ZW (Ren Zhengwei), Ni HQ (Ni Haiqiao), He ZH (He Zhenhong), Niu ZC (Niu, Zhichuan), Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn

مصطلحات موضوعية: Infrared Photodiodes, 半导体物理

العلاقة: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Hao, RT (Hao, Ruiting); Xu, YQ (Xu, Yingqiang); Zhou, ZQ (Zhou, Zhiqiang); Ren, ZW (Ren, Zhengwei); Ni, HQ (Ni, Haiqiao); He, ZH (He, Zhenhong); Niu, ZC (Niu, Zhichuan) .Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,FEB 21 2007,40 (4):1080-1084; http://ir.semi.ac.cn/handle/172111/9558Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/9558Test

المؤلفون: Hao RT (Hao Ruiting), Xu YQ (Xu Yingqiang), Zhou ZQ (Zhou Zhiqiang), Ren ZW (Ren Zhengwei), Ni HQ (Ni Haiqiao), He ZH (He Zhenhong), Niu ZC (Niu Zhichuan), Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn

مصطلحات موضوعية: Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd

العلاقة: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Hao, RT (Hao, Ruiting); Xu, YQ (Xu, Yingqiang); Zhou, ZQ (Zhou, Zhiqiang); Ren, ZW (Ren, Zhengwei); Ni, HQ (Ni, Haiqiao); He, ZH (He, Zhenhong); Niu, ZC (Niu, Zhichuan) .MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,NOV 7 2007,40 (21):6690-6693; http://ir.semi.ac.cn/handle/172111/9212Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/9212Test