المؤلفون: Kefyalew Addis Alene, Catherine A. Gordon, Archie C. A. Clements, Gail M. Williams, Darren J. Gray, Xiao-Nong Zhou, Yuesheng Li, Jürg Utzinger, Johanna Kurscheid, Simon Forsyth, Jie Zhou, Zhaojun Li, Guangpin Li, Dandan Lin, Zhihong Lou, Shengming Li, Jun Ge, Jing Xu, Xinling Yu, Fei Hu, Shuying Xie, Donald P. McManus

المصدر: Diseases, Vol 10, Iss 4, p 93 (2022)

مصطلحات موضوعية: People’s Republic of China, Schistosoma japonica, schistosomiasis, spatial analysis, Medicine

وصف الملف: electronic resource

العلاقة: https://www.mdpi.com/2079-9721/10/4/93Test; https://doaj.org/toc/2079-9721Test

الوصول الحر: https://doaj.org/article/fc4081defe7f4921a089407b6418dd20Test

المؤلفون: Kaisheng Hu, Xiaobing Guo, Zhihui Zhou, Mian Zhang, Guangpin Li, Xiukun He

المصدر: Proceedings of 4th International Conference on Solid-State and IC Technology

الإتاحة: https://doi.org/10.1109/icsict.1995.503337Test
http://xplorestaging.ieee.org/ielx3/3736/10934/00503337.pdf?arnumber=503337Test

المؤلفون: Johnathan Linfoot, Craig Clarke, Guangpin Li, Bruce Hobbs

المصدر: SEG Technical Program Expanded Abstracts 2007.

مصطلحات موضوعية: Transient (oscillation), Mechanics, Geology

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::73e45526c2746fec6384e34413ae9623Test
https://doi.org/10.1190/1.2792480Test

المؤلفون: Xiukun He, Guangpin Li, Xiaobing Guo, Zhihui Zhou, Kaisheng Hu, Mian Zhang

المصدر: Proceedings of 4th International Conference on Solid-State and IC Technology.

مصطلحات موضوعية: Materials science, Annealing (metallurgy), business.industry, Photoconductivity, chemistry.chemical_element, Gallium arsenide, chemistry.chemical_compound, Ion implantation, chemistry, Photosensitivity, Optoelectronics, MESFET, business, Helium, Voltage

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::006b71a147bbad793e4dfa8f4c91c498Test
https://doi.org/10.1109/icsict.1995.503337Test

المؤلفون: Kaisheng Hu, Xiaobing Guo, Zhihui Zhou, Mian Zhang, Guangpin Li, Xiukun He

المصدر: Proceedings of 4th International Conference on Solid-State & IC Technology; 1995, p521-523, 3p