نتائج البحث - "Gotow, Takahiro"

1

دورية أكاديمية

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition.

المؤلفون: Gotow, Takahiro^1,2 (AUTHOR) takahiro-gotow@aist.go.jp, Kumagai, Naoto^1,2 (AUTHOR), Shimizu, Tetsuji^1,2 (AUTHOR), Yamada, Hisashi^1,2 (AUTHOR), Ide, Toshihide^1,2 (AUTHOR), Maeda, Tatsuro³ (AUTHOR)

المصدر: Crystal Research & Technology. May2024, p1. 6p. 6 Illustrations.

2

دورية أكاديمية

The Neurofilament Middle Molecular Mass Subunit Carboxyl-Terminal Tail Domains Is Essential for the Radial Growth and Cytoskeletal Architecture of Axons but Not for Regulating Neurofilament Transport Rate

المؤلفون: Rao, Mala V., Campbell, Jabbar, Yuan, Aidong, Kumar, Asok, Gotow, Takahiro, Uchiyama, Yasuo, Nixon, Ralph A.

المصدر: The Journal of Cell Biology, 2003 Dec 01. 163(5), 1021-1031.

الوصول الحر: https://www.jstor.org/stable/1621914Test

النص الكامل

3

دورية أكاديمية

NF-M Is an Essential Target for the Myelin-Directed "Outside-In" Signaling Cascade That Mediates Radial Axonal Growth

المؤلفون: Garcia, Michael L., Lobsiger, Christian S., Shah, Sameer B., Deerinck, Tom J., Crum, John, Young, Darren, Ward, Christopher M., Crawford, Thomas O., Gotow, Takahiro, Uchiyama, Yasuo, Ellisman, Mark H., Calcutt, Nigel A., Cleveland, Don W.

المصدر: The Journal of Cell Biology, 2003 Dec 01. 163(5), 1011-1020.

الوصول الحر: https://www.jstor.org/stable/1621913Test

النص الكامل

4

دورية أكاديمية

Gene Replacement in Mice Reveals That the Heavily Phosphorylated Tail of Neurofilament Heavy Subunit Does Not Affect Axonal Caliber or the Transit of Cargoes in Slow Axonal Transport

المؤلفون: Rao, Mala V., Garcia, Michael L., Miyazaki, Yukio, Gotow, Takahiro, Yuan, Aidong, Mattina, Salvatore, Ward, Chris M., Calcutt, Nigel A., Uchiyama, Yasuo, Nixon, Ralph A., Cleveland, Don W.

المصدر: The Journal of Cell Biology, 2002 Aug . 158(4), 681-693.

الوصول الحر: https://www.jstor.org/stable/1621221Test

النص الكامل

5

GaN HEMTでの二次元電子ガスキャリヤ濃度とゲートドレイン間リーク電流理論計算

المؤلفون: MIYAMOTO, YASUYUKI, Gotow, Takahiro

المصدر: 電気学会論文誌C. 142(No. 3):348-353

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=jairo_______::0a26d9b5a0a82d683aeebc22814bbedcTest
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100875016Test

6

دورية أكاديمية

Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers

المؤلفون: Ito, Yoshikaze, Tamai, Seita, Hoshi, Takuya, Gotow, Takahiro, Miyamoto, Yasuyuki

المصدر: Japanese Journal of Applied Physics ; volume 62, issue SC, page SC1048 ; ISSN 0021-4922 1347-4065

الإتاحة: https://doi.org/10.35848/1347-4065/acb2d5Test

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7

دورية أكاديمية

Soy isoflavone daidzein protects Neuro2a cells from NO stress via activation of AMPK-PGC1α pathway followed by mitochondrial enhancement

المؤلفون: Ito, Shogo, Sasaki, Hiroko, Gotow, Takahiro, Suetake, Isao, Nagai, Kaoru

المساهمون: Ministry of Education, Culture, Sports, Science and Technology

المصدر: PharmaNutrition ; volume 24, page 100337 ; ISSN 2213-4344

مصطلحات موضوعية: Pharmacology (medical), Pharmacology, Food Science

الإتاحة: https://doi.org/10.1016/j.phanu.2023.100337Test
https://api.elsevier.com/content/article/PII:S2213434423000099?httpAccept=text/xmlTest
https://api.elsevier.com/content/article/PII:S2213434423000099?httpAccept=text/plainTest

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8

دورية أكاديمية

Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMT Structures / チャネルスケーリングがSb系HEMT構造の電子輸送特性に及ぼす影響

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3446

View record in JSTAGE

9

Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs

المؤلفون: Gotow, Takahiro, Arai, Takahiro, Aota, Tomoya, MIYAMOTO, YASUYUKI

المصدر: 2022 Compound Semiconductor Week (CSW).

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12a6388159c269ff8bc40f55bbe29c79Test
https://doi.org/10.1109/csw55288.2022.9930366Test

10

دورية أكاديمية

Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile.

المؤلفون: Gotow, Takahiro¹ (AUTHOR) gotow@mosfet.t.u-tokyo.ac.jp, Mitsuhara, Manabu² (AUTHOR), Hoshi, Takuya² (AUTHOR), Sugiyama, Hiroki² (AUTHOR), Takenaka, Mitsuru¹ (AUTHOR), Takagi, Shinichi¹ (AUTHOR)

المصدر: Journal of Applied Physics. 12/7/2019, Vol. 126 Issue 21, p1-6. 6p. 1 Diagram, 6 Graphs.

مصطلحات موضوعية: *TUNNEL field-effect transistors, *ANTIMONY, *MASS spectrometry, *DEUTERIUM

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