المؤلفون: Zurauskaite, Laura, Abedin, Ahmad, Hellström, Per-Erik, 1970, Östling, Mikael

المصدر: ECS Transactions. :387-393

مصطلحات موضوعية: Germanium compounds, Interface states, Logic gates, Si-Ge alloys, Silica, Silicates, Silicon, Silicon oxides, Thulium compounds, CMOS devices, Epitaxially grown, Gate stacks, Ge surfaces, Interface state density, Interfacial layer, Oxide trap density, Ultra-thin, Passivation

وصف الملف: electronic

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-285309Test
https://kth.diva-portal.org/smash/get/diva2:1505880/FULLTEXT01.pdfTest

المؤلفون: Ahmad Abedin, Laura Zurauskaite, Per-Erik Hellström, Mikael Östling

المصدر: ECS Transactions. 98:387-393

مصطلحات موضوعية: Thulium compounds, Ge surfaces, Silicon, Ultra-thin, Materials science, Passivation, Silicon oxides, CMOS devices, Oxide, chemistry.chemical_element, Epitaxy, chemistry.chemical_compound, Germanium compounds, Annan elektroteknik och elektronik, Interface state density, Other Electrical Engineering, Electronic Engineering, Information Engineering, business.industry, Silicates, Logic gates, Silica, Interface states, Oxide trap density, Silicate, Gate stacks, Thulium, CMOS, chemistry, Trap density, Interfacial layer, Optoelectronics, Si-Ge alloys, Epitaxially grown, business

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be0e306ade1e040a300ce580bfc8f4daTest
https://doi.org/10.1149/09805.0387ecstTest

المؤلفون: Heyns, M., Bellenger, F., BRAMMERTZ, Guy, Caymax, M., De Gendt, S., De Jaeger, B., Delabie, A., Eneman, G., Groeseneken, G., Houssa, M., Leonelli, D., Lin, D., Martens, K., Merckling, C., MEURIS, Marc, Mitard, J., Penaud, J., Pourtois, G., Scarrozza, M., Simoen, E., Van Elshocht, S., Vandenberghe, W., Vandooren, A., Verhulst, A., Wang, W.-E.

مصطلحات موضوعية: Defect levels, Electrical passivation, Experimental data, Ge surfaces, High mobility channels, New material, Novel devices, Power Consumption, Roadmap, Short channels, Si layer, Supply voltages, Theoretical modeling, Tunnel FET, Defects, Germanium, Heterojunctions, Materials, MOS devices, Passivation, Semiconducting silicon, Carrier mobility

العلاقة: Materials Research Society Symposium Proceedings, 1194, p. 34 -45; http://hdl.handle.net/1942/31632Test; 45; 34

الإتاحة: http://hdl.handle.net/1942/31632Test

المؤلفون: Gianluigi Maggioni, Walter Raniero, D. De Salvador, Virginia Boldrini, Enrico Napolitani, Francesco Sgarbossa, D. R. Napoli, Sara Carturan

مصطلحات موضوعية: Ge surfaces, Secondary ion mass spectrometry, Materials science, Annealing (metallurgy), Analytical chemistry, Ge substrates, chemistry.chemical_element, Germanium, Doping (additives), Mass spectrometry, Radiation detectors, Silicon wafers, Sputtering, Surface defects, Surface morphology, Defect-free surfaces, Diffusion annealing, Diffusion model, Diffusion profiles, Dopant sources, Ge wafer, Diffusion, Antimony diffusion, 02 engineering and technology, 01 natural sciences, Diffusion, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Wafer, 010302 applied physics, Dopant, Mechanical Engineering, Doping, Defect-free surfaces, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, 0210 nano-technology, Surface morphology, Ge wafer

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75ebc285c4584a4874205b1141e54b7dTest
http://hdl.handle.net/11577/3251035Test

المؤلفون: Yaacoub, Lama, Schamm-Chardon, Sylvie, Ovsyuk, N.N., Zwick, Antoine, Groenen, Jesse

المساهمون: Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Sobolev Institute of Geology and Mineralogy Novosibirsk, Siberian Branch of the Russian Academy of Sciences (SB RAS), Matériaux Multi-fonctionnels et Multi-échelles (CEMES-M3)

المصدر: ISSN: 1062-8738.

مصطلحات موضوعية: Brillouin scattering, Electromagnetic wave emission, Germanium, Phonons, Thermodynamic stability, Acoustic phonons, Ge surfaces, High frequency acoustics, Interfacial region, Native oxide layer, Photoelastic models, Sub nanometers, Thermal instabilities, Acoustic wave scattering, [PHYS]Physics [physics]

العلاقة: hal-01720450; https://hal.science/hal-01720450Test

الإتاحة: https://doi.org/10.3103/S1062873815110246Test
https://hal.science/hal-01720450Test

المؤلفون: Gai, Z, Yang, WS, Zhao, RG, Sakurai, T

المساهمون: Yang, WS (reprint author), Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Beijing Univ, Dept Phys, Beijing 100871, Peoples R China., Beijing Univ, Lab Mesoscop Phys, Beijing 100871, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: ORIENTATIONAL PHASE-DIAGRAM, MILLER INDEX SURFACES, SCANNING TUNNELING MICROSCOPY, STEPPED SI(113) SURFACES, ATOMIC-STRUCTURE, SILICON SURFACES, GE SURFACES, ENERGY, RECONSTRUCTIONS, TRICRITICALITY

العلاقة: PHYSICAL REVIEW B.1999,59,(20),13003-13008.; 1022553; http://hdl.handle.net/20.500.11897/401573Test; WOS:000080571000042

الإتاحة: https://doi.org/20.500.11897/401573Test
https://doi.org/10.1103/PhysRevB.59.13003Test
https://hdl.handle.net/20.500.11897/401573Test

المؤلفون: Gai, Z, Zhao, RG, Li, XW, Yang, WS

المساهمون: Gai, Z (reprint author), Peking Univ, Mescosop Phys Lab, Beijing 100871, Peoples R China., Peking Univ, Mescosop Phys Lab, Beijing 100871, Peoples R China., Peking Univ, Dept Phys, Beijing 100871, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: SCANNING-TUNNELING-MICROSCOPY, MILLER INDEX SURFACES, VICINAL SURFACES, ATOMIC-STRUCTURE, EQUILIBRIUM SHAPE, SI(001) SURFACES, SILICON SURFACES, ENERGY BARRIER, GE SURFACES, SI(113)

العلاقة: PHYSICAL REVIEW B.1998,58,(8),4572-4578.; 789863; http://hdl.handle.net/20.500.11897/390037Test; WOS:000075772500058

الإتاحة: https://doi.org/20.500.11897/390037Test
https://doi.org/10.1103/PhysRevB.58.4572Test
https://hdl.handle.net/20.500.11897/390037Test

المؤلفون: Johnson, Brett, Caradonna, P., Pyke, D. J., McCallum, Jeffrey C., Gortmaker, P.

المصدر: Thin Solid Films

مصطلحات موضوعية: Keywords: a-Si layers, Amorphous Si, Crystalline-amorphous interfaces, Device modeling, Dopant concentrations, Effect of hydrogen, Ge surfaces, H diffusion, Hydrogen diffusion, In-diffusion, Order of magnitude, Retarding effect, Si layer, Solid phase epitaxy, Stabl Device modeling

العلاقة: http://hdl.handle.net/1885/61277Test; https://openresearch-repository.anu.edu.au/bitstream/1885/61277/7/01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf.jpgTest

الإتاحة: https://doi.org/10.1016/j.tsf.2009.09.145Test
http://hdl.handle.net/1885/61277Test
https://openresearch-repository.anu.edu.au/bitstream/1885/61277/7/01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf.jpgTest

مصطلحات الفهرس: Germanium compounds, Interface states, Logic gates, Si-Ge alloys, Silica, Silicates, Silicon, Silicon oxides, Thulium compounds, CMOS devices, Epitaxially grown, Gate stacks, Ge surfaces, Interface state density, Interfacial layer, Oxide trap density, Ultra-thin, Passivation, Other Electrical Engineering, Electronic Engineering, Information Engineering, Annan elektroteknik och elektronik, Conference paper, info:eu-repo/semantics/conferenceObject, text

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-285309Test
ECS Transactions, p. 387-393

مصطلحات الفهرس: Germanium compounds, Interface states, Logic gates, Si-Ge alloys, Silica, Silicates, Silicon, Silicon oxides, Thulium compounds, CMOS devices, Epitaxially grown, Gate stacks, Ge surfaces, Interface state density, Interfacial layer, Oxide trap density, Ultra-thin, Passivation, Other Electrical Engineering, Electronic Engineering, Information Engineering, Annan elektroteknik och elektronik, Conference paper, info:eu-repo/semantics/conferenceObject, text

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-285309Test
ECS Transactions, p. 387-393