يعرض 1 - 10 نتائج من 430 نتيجة بحث عن '"Gaubas, E"', وقت الاستعلام: 0.97s تنقيح النتائج
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    دورية أكاديمية

    المساهمون: Department of Physics, Helsinki Institute of Physics

    وصف الملف: application/pdf

    العلاقة: This work was partially funded by Academy of Finland (Project Nr 315082).; Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zajac , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803Test; ORCID: /0000-0002-6913-5654/work/80948160; http://hdl.handle.net/10138/346137Test; 65bf1a80-4def-469f-ab02-3f9f7c2854e4; 000566907700004

  2. 2
    دورية أكاديمية

    المساهمون: Materials Physics, Department of Physics, Helsinki Institute of Physics

    وصف الملف: application/pdf

    العلاقة: This research is funded by the European Social Fund under Measure No. 09.3.3-LMT-K-712 -02-0012 'Development of Competences of Scientists, other Researchers and Students through Practical Research Activities'. The authors are indebted to Dr. M. Zajac for providing the AT GaN materials. The neutron irradiations at the TRIGA Facility were supported by the AIDA-2020 Transnational Access Project funded by the EU Horizon 2020 R&D Programme under Grant Agreement No. 654168.; Pavlov , J , Ceponis , T , Deveikis , L , Heikkinen , T , Räisänen , J , Rumbauskas , Tamulaitis , G , Tuomisto , F & Gaubas , E 2019 , ' SPECTROSCOPY OF DEFECTS IN NEUTRON IRRADIATED AMMONO-THERMAL GaN BY COMBINING PHOTOIONIZATION, PHOTOLUMINESCENCE AND POSITRON ANNIHILATION TECHNIQUES ' , Lithuanian Journal of Physics , vol. 59 , no. 4 , pp. 211-223 . https://doi.org/10.3952/physics.v59i4.4137Test; ORCID: /0000-0002-6913-5654/work/68618836; 44d436f1-3c70-4ae2-aa8b-2257ed6b6b63; http://hdl.handle.net/10138/312219Test; 000505595100005

  3. 3
    دورية أكاديمية

    المساهمون: Department of Applied Physics, Vilnius University, Polish Academy of Sciences, Antimatter and Nuclear Engineering, Aalto-yliopisto, Aalto University

    العلاقة: Journal of Crystal Growth; Volume 547; Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zając , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803Test; PURE UUID: 71e16705-8c20-44ba-aafb-f33ab9863b36; PURE ITEMURL: https://research.aalto.fi/en/publications/71e16705-8c20-44ba-aafb-f33ab9863b36Test; PURE LINK: http://www.scopus.com/inward/record.url?scp=85087746550&partnerID=8YFLogxKTest; PURE LINK: https://researchportal.helsinki.fi/fi/publications/65bf1a80-4def-469f-ab02-3f9f7c2854e4Test; https://aaltodoc.aalto.fi/handle/123456789/103426Test; URN:NBN:fi:aalto-202103312699

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    تقرير
  5. 5
    دورية أكاديمية

    المساهمون: Vilnius University, Department of Applied Physics, University of Helsinki, Aalto-yliopisto, Aalto University

    وصف الملف: application/pdf

    العلاقة: LITHUANIAN JOURNAL OF PHYSICS; Volume 59, issue 4; Pavlov , J , Ceponis , T , Deveikis , L , Heikkinen , T , Raisanen , J , Rumbauskas , Tamulaitis , G , Tuomisto , F & Gaubas , E 2019 , ' Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques ' , LITHUANIAN JOURNAL OF PHYSICS , vol. 59 , no. 4 , pp. 211-223 . https://doi.org/10.3952/physics.v59i4.4137Test; PURE UUID: 36cd8549-7ee5-44d9-9643-e3d16a425fbc; PURE ITEMURL: https://research.aalto.fi/en/publications/36cd8549-7ee5-44d9-9643-e3d16a425fbcTest; PURE FILEURL: https://research.aalto.fi/files/41404043/SCI_Pavlov_Spectroscopy_of_defects_LJoP.pdfTest; https://aaltodoc.aalto.fi/handle/123456789/43436Test; URN:NBN:fi:aalto-202003132477

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    دورية أكاديمية
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    دورية أكاديمية

    المساهمون: Department of Physics

    وصف الملف: application/pdf

    العلاقة: Authors appreciate J. Harkonen and E. Tuominen for provided Si pad-detectors. J. Kalade is acknowledged for fruitful discussions and recommendations in analysis of the theoretical aspects of carrier transport. A. Uleckas is acknowledged for design of software for IChCC instrument and help in measurements. This work has been performed in frame of the CERN-RD39 collaboration. The financial support of the Academy of Finland (Project No. 132128) is gratefully acknowledged.; Gaubas , E , Ceponis , T , Vaitkus , J & Raisanen , J 2011 , ' Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures ' , AIP Advances , vol. 1 , no. 2 , 022143 , pp. 0221143-1 . https://doi.org/10.1063/1.3605715Test; 80052807725; 5b6cb759-5611-4636-a671-cf98359e4056; http://hdl.handle.net/10138/161485Test; 000302137000041

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    دورية أكاديمية
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    دورية أكاديمية
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    دورية أكاديمية