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1مؤتمر
المؤلفون: Zhang, Meng, Wang, Yunyang, Jiang, Zhendong, Xu, Xindi, Huang, Jinyang, Wong, Man, Kwok, Hoi-Sing
مصطلحات موضوعية: Fast transition time, Gate pulse stress, Hot carrier (HC), Nonequilibrium drain junction, Polycrystalline silicon (poly-Si), Thin-film transistors (TFTs)
العلاقة: https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test; Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, v. 2023-July, July 2023, article number 10249065; https://doi.org/10.1109/IPFA58228.2023.10249065Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+of+Polycrystalline+Silicon+Thin-Film+Transistors+underTest+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFA; http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest
الإتاحة: https://doi.org/10.1109/IPFA58228.2023.10249065Test
https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+of+Polycrystalline+Silicon+Thin-Film+Transistors+underTest+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFA
http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest -
2رسالة جامعية
المؤلفون: 林曉嫻, Hsiao-Hsien Lin, 戴亞翔, Ya-Hsiang Tai
مصطلحات موضوعية: 低溫複晶矽薄膜電晶體, 劣化, 閘極關閉區脈衝電壓, 汲極直流偏壓, LTPS TFTs, Degradation, Gate Pulse Stress in OFF Region, Drain Bias
العلاقة: http://140.113.39.130/cdrfb3/record/nctu/#GT009496512Test; http://hdl.handle.net/11536/38022Test
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3مورد إلكتروني
مصطلحات الفهرس: Fast transition time, Gate pulse stress, Hot carrier (HC), Nonequilibrium drain junction, Polycrystalline silicon (poly-Si), Thin-film transistors (TFTs), Conference paper
URL:
https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test https://doi.org/10.1109/IPFA58228.2023.10249065Test http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+of+Polycrystalline+Silicon+Thin-Film+Transistors+underTest+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits%2C+IPFA http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest
