المؤلفون: Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, Berdahl, Paul

وصف الملف: application/pdf

العلاقة: http://www.osti.gov/servlets/purl/869972Test; https://www.osti.gov/biblio/869972Test

الإتاحة: http://www.osti.gov/servlets/purl/869972Test
https://www.osti.gov/biblio/869972Test

المؤلفون: Kim, Hyoung-June, Palmer, Joyce E., Thompson, Carl V., Smith, Henry I., Jiran, Eva, Atwater, Harry A., Schott, Stephen C., Wong, Chee C., Garrison, Stephen M., Im, James S., Smith, David A., Frost, Harold J., Srolovitz, David J., Maiorino, Cesar D., Privost, Larry, Clevenger, Lawrence A., Tu, King-Ning

مصطلحات موضوعية: Kinetic Phenomena in Thin Film Electronic Materials, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Zone Melting Recrystallization of Silicon Films, Zone Melting Recrystallization of Germanium Films, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Modeling of Grain Formation in Thin Films, Modeling of Grain Growth in Thin Films, Modeling of Beading in Thin Films, Grain Growth in Thin Films, Grain Growth in Thin Films Lines, Electrical Properties of Interconnect Lines with Controlled Microstructures, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Kinetic Phenomena in Thin Film Electronic Materials; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_02; http://hdl.handle.net/1721.1/56928Test

الإتاحة: http://hdl.handle.net/1721.1/56928Test

المؤلفون: Anderson, Erik H., Chu, William, Plotnik, Irving, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Warren, Alan C., Antoniadis, Dimitri A., Orlando, Terry P., Melngailis, John, Chou, Stephen Y., Shahidi, Ghavam G., Licini, Jerome C., Scott-Thomas, John H. F., Park, Samuel L., Kastner, Marc A., Atwater, Harry A., Garrison, Stephen M., Palmer, Joyce E., Quek, Hui Meng, Wong, Chee C., Thompson, Carl V., Canizaares, Claude C., Stein, Josephine A., Summa, Deborah A., Paynter, Henry M., Rajchman, Jan A., Tse, Ming K.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Corrugated Gate MOS Structures, MOSFET's in Si with Deep-Submicron Channel Lengths, Electronic Conduction in Submicron Silicon Inversion Layers, Crystalline Films on Amorphous Substrates, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings, Switchable Zero Order Diffraction Grating Light Valves

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128; RLE_PR_128_01; http://hdl.handle.net/1721.1/56948Test

الإتاحة: http://hdl.handle.net/1721.1/56948Test

المؤلفون: Kim, Hyoung-June, Palmer, Joyce E., Atwater, Harry A., Garrison, Stephen M., Quek, Hui Meng, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., Smith, Henry I., Wong, Chee C., Im, James S., Tomita, Hisashi, Smith, David A., Jiran, Eva, Cammarata, Robert C., Clevenger, Lawrence A., Tu, King-Ning, Maiorino, Cesar D., Longworth, Hai P., Cho, Jaeshin, Kahn, H., Frost, Harold J., Dubner, Andrew D., Ro, Jaesang, Melngailis, John

مصطلحات موضوعية: Kinetic Phenomena in Thin Film Electronic Materials, Normal Grain Growth in Ultrathin (˂1000 Å) Films of Silicon, Normal Grain Growth in Ultrathin (˂1000 Å) Films of Germanium, Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Silicon, Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Germanium, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Epitaxy via Surface-Energy-Driven Grain Growth, Zone Melting Recrystallization of Silicon on Insulators, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts, Grain Growth in Thin Films of Aluminum, Thin Metallic Interconnects, Narrow Metallic Interconnects, Electromigration at Aluminum-Silicon Contacts in Integrated Circuits, Computer Modeling of Microstructural Evolution in Thin Films, Focussed Ion Beam Induced Deposition

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1987; Kinetic Phenomena in Thin Film Electronic Materials; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 129; RLE_PR_129_02; http://hdl.handle.net/1721.1/56995Test

الإتاحة: http://hdl.handle.net/1721.1/56995Test

المؤلفون: Anderson, Erik H., Plotnik, Irving, Schattenburg, Mark L., Melngailis, John, Smith, Henry I., Kwasnick, Robert F., Licini, Jerome C., Kastner, Marc A., Lee, Patrick A., Warren, Alan C., Antoniadis, Dimitri A., Chou, Stephen Y., Shahidi, Ghavam G., Ippen, Erich P., Palmer, Joyce E., Wong, Chee C., Yonehara, Takao, Garrison, Stephen M., Atwater, Harry A., Thompson, Carl V., Schott, Stephen C., Canizares, Claude R., Stein, Josephine A., Summa, Deborah A., Rajchman, Jan A., Paynter, Henry M., Chen, Dong-Pei, Haus, Hermann A.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Electronic Conduction in Ultra-Narrow Silicon Inversion Layers, Corrugated Gate MOS Structures, Submicron FET's in Si, Submicron-Gap High-Mobility Silicon Picosecond Photodetectors, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Zone-Melting Recrystallization of Si for Solar Cells, Integration of Si and Ill-V Materials, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Display Based on Switchable Zero Order Diffraction Grating Light Valves, Surface Acoustic Wave Propagation in Gratings, Near IR Grating Polarizers

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_01; http://hdl.handle.net/1721.1/56933Test

الإتاحة: http://hdl.handle.net/1721.1/56933Test

المؤلفون: Anderson, Erik H., Carter, James M., Chu, William, Komatsu, Kazu, Quek, Hui Meng, Yen, Anthony T., Plotnik, Irving, Schattenburg, Mark L., Smith, Henry I., Akhtar, Salmon, Ku, Yao C., Toth, Markus, Porter, Mark, Antoniadis, Dimitri A., Field, S., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Ismail, Khalid, Orlando, Terry P., Shahidi, Ghavam G., Chou, Stephen Y., Ajuria, Sergio, Atwater, Henry A., Floro, Jerrold A., Garrison, Stephen M., Palmer, Joyce E., Thompson, Carl V., Canizares, Claude R.

مصطلحات موضوعية: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 0.1 μm and Below, Improved Mask Technology for X-Ray Lithography, Theoretical Analysis of the Lithography Process, Electronic Conduction in One-Dimensional Semiconductor Devices, Surface Superlattice Formation in Silicon Inversion Layers Using 0.2 μm Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in III-V Field-Effect Transistors, Investigation of One-Dimensional Conductivity in Multiple, Parallel Inversion Lines, Electron Transport in MOSFETs in Si with Deep-Submicron Channel Lengths, Application of the Shubnikov-de Haas Oscillations in Characterization of Si MOSFETs, Application of the Shubnikov-de Haas Oscillations in Characterization of GaAs MODFETs, Crystalline Films on Amorphous Substrates, Ion-Beam-Enhanced Grain Growth in Thin Films, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1987; Submicron Structures Technology and Research; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 129; RLE_PR_129_01; http://hdl.handle.net/1721.1/57008Test

الإتاحة: http://hdl.handle.net/1721.1/57008Test