المؤلفون: Krause, Sascha, 1989, Mityashkin, Vladislav, Antipov, Sergey, Gol'tsman, Gregory, Meledin, Denis, 1974, Desmaris, Vincent, 1977, Belitsky, Victor, 1955, Rudzinski, Mariusz

المصدر: IEEE Transactions on Terahertz Science and Technology. 7(1):53-59

مصطلحات موضوعية: ultra-thin film, HEB, NbN, IF bandwidth, GaN buffer-layer, Hot Electron Bolometer

وصف الملف: electronic

الوصول الحر: https://research.chalmers.se/publication/246070Test
http://publications.lib.chalmers.se/records/fulltext/246070/local_246070.pdfTest

المؤلفون: T. F. Rusak, K. L. Enisherlova, A. V. Lutzau, V. V. Saraykin, V. I. Korneev, Т. Ф. Русак, К. Л. Енишерлова, А. В. Лютцау, В. В. Сарайкин, В. И. Корнеев

المصدر: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 20, № 4 (2017); 272-283 ; Известия высших учебных заведений. Материалы электронной техники; Том 20, № 4 (2017); 272-283 ; 2413-6387 ; 1609-3577 ; 10.17073/1609-3577-2017-4

مصطلحات موضوعية: кристаллографическая плоскость, GaN buffer layer, dislocation, secondary ion mass spectroscopy, spherical section, selective chemical etching, single-crystal diffractometry, mosaic structure, crystallographic plane, буферный слой GaN, дислокация, масс-спектроскопия вторичных ионов, сферический шлиф, селективное химическое травление, однокристальная дифрактометрия, блочность

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DOI:10.1088/0268-1242/30/3/035010; Li X., Bergsten J., Nilsson D., Danielsson Ö., Pedersen H., Rorsman N., Janzén E., Forsberg U. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results // Appl. Phys. Lett. 2016. V. 107, Iss. 26. P. 26105 (15 p). DOI:10.1063/1.4937575; Feng Z. H., Liu B., Yuan F. P., Yin J. Y., Liang D., Li X. B., Feng Z., Yang K. W., Cai S. J. Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD // J. Cryst. Growth. 2007. V. 309, Iss. 1. P. 8—11. DOI:10.1016/j.jcrysgro.2007.08.032; Manmohan Agrawal, Shreyash Pratap Singh, Nidhi Chaturvedi. Concept of buffer doping and backbarrier in GaN HEMT // International Journal of ChemTech Research. 2014–2015. V. 7, N 2. P. 921—927. URL: http://sphinxsai.com/2015/ch_vol7_no2_ICONN/7/NE26%20Test(921-927).pdf; Cui Lei, Yin Haibo, Jiang Lijuan, Wang Quan, Feng Chun, Xiao Hongling, Wang Cuimei, Gong Jiamin, Zhang Bo, Li Baiquan, Wang Xiaoliang, Wang Zhanguo. The influence of Fe doping on the surface topography of GaN epitaxial material // Journal of Semiconductors. 2015. V. 36, N 10. P. 103002. DOI:10.1088/1674-4926/36/10/103002; Lipski F. Semi-insulating GaN by Fe-doping in hydride vapor phase epitaxy using a solid iron source // Annual Report. Ulm University, Institute of Optoelrctronucs, 2010. P. 63—70. URL: https://pdfs.semanticscholar.org/befe/2434893df4f74d14ca62dc740f709a13190d.pdfTest; Fariza A., Lesnik A., Neugebauer S., Wieneke M., Hennig J., Bläsing J., Witte H., Dadgar A., Strittmatter A. Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping // J. Appl. Phys. 2017. V. 122, Iss. 2. P. 025704-1—025704-6. DOI:10.1063/1.4993180; Polyakov A. Y., Smirnov N. B., Dorofeev A. A., Gladysheva N. B., Kondratyev E. S., Shemerov I. V., Turutin A. V., Ren F., Pearton S. J. Deep traps in AlGaN/GaN high electron mobility transistors on SiC // ECS J. Solid State Sci. Technol. 2016. V. 5, Iss. 10. P. Q260—Q265. DOI:10.1149/2.0191610jss; Simpkins B. S., Yu E. T., Waltereit P., Speck J. S. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride // J. Appl. Phys. 2003. V. 94, Iss. 3. P. 1448—1453. DOI:10.1063/1.1586952; Енишерлова К. Л., Русак Т. Ф., Корнеев В. И., Зазулина А. Н. Влияние качества подложек SiC на структурное совершенство и некоторые электрические параметры пленок AlGaN/GaN» // Известия вузов. Материалы электрон. техники. 2015. Т. 18, № 3. С. 221—228. DOI:10.17073/1609-3577-2015-3-221-228; Говорков А. В., Поляков А. Я., Югова Т. Г., Смирнов Н. Б., Петрова Е. А., Меженный М. В., Марков А. В., Ли И. Х., Пиртон С. Д. 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الإتاحة: https://doi.org/10.17073/1609-3577-2017-4-272-283Test
https://doi.org/10.17073/1609-3577-2017-4Test
https://doi.org/10.1016/j.jcrysgro.2016.08.059Test
https://doi.org/10.1016/j.mser.2015.05.001Test
https://doi.org/10.1088/0268-1242/30/3/035010Test
https://doi.org/10.1063/1.4937575Test
https://doi.org/10.1016/j.jcrysgro.2007.08.032Test
https://doi.org/10.1088/1674-4926/36/10/103002Test
https://doi.org/10.1063/1.4993180Test
https://doi.org/10.1149/2.0191610jssTest

المساهمون: Liliental-Weber, Zuzanna

المصدر: Journal of Applied Physics; 88; 10; Other Information: Journal Publication Date: 11/15/2000; PBD: 1 Jul 2000

وصف الملف: Medium: X; Size: vp.

الوصول الحر: http://www.osti.gov/scitech/biblio/834298Test

المؤلفون: Cui JP, Duan Y, Wang XF, Zeng YP, Cui JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: jpcui@semi.ac.cn

مصطلحات موضوعية: Zno Film, Strain Status, Gan Buffer Layer, Sapphire, Mvpe, 半导体材料, aluminum oxide, 蓝宝石, alumina, al 2 o 3, bayer process, aluminium compounds, aluminum compounds, alumine, aluminiumoxid, oxyde d aluminium, tonerde, saphir, sapphire (francais), aluminium oxide

العلاقة: MICROELECTRONICS JOURNAL; Cui JP; Duan Y; Wang XF; Zeng YP .Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy ,MICROELECTRONICS JOURNAL,2008 ,39(12):1542-1544; http://ir.semi.ac.cn/handle/172111/7467Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7467Test

المؤلفون: Antipov, S., Trifonov, A., Krause, Sascha, 1989, Meledin, Denis, 1974, Kaurova, N., Rudzinski, M., Desmaris, Vincent, 1977, Belitsky, Victor, 1955, Goltsman, G.

المصدر: Superconductor Science and Technology. 32(7)

مصطلحات موضوعية: gain and noise bandwidth, GaN buffer layer, HEB

الوصول الحر: https://research.chalmers.se/publication/510666Test
https://research.chalmers.se/publication/513012Test

المؤلفون: Chen Z, Lu DH, Yuan HR, Han P, Liu XL, Li YF, Wang XH, Lu Y, Wang ZG, Lu DH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Nanostructures, Metalorganic Chemical Vapor Deposition, Nitrides, Gan Buffer Layer, Epitaxial-growth, Phase Epitaxy, Surfaces, Temperature, Dependence, Mode, Wire, 半导体材料, nanostructured materials, metal organic chemical vapor deposition, epitaxy, dependency, nanomaterials, nanometer materials, nanophase materials, nanostructure controlled materials, nanostructure materials, ultra-fine microstructure materials, nanobelts, nanocomposites, nanoporous materials, nanorods, nanocrystalline materials, nano composites, nanocomposite materials, nanostructured composite materials

العلاقة: JOURNAL OF CRYSTAL GROWTH; Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG .A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2002,235 (1-4):188-194; http://ir.semi.ac.cn/handle/172111/11990Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/11990Test

المؤلفون: Liu XL, Lu DC, Wang LS, Wang XH, Wang D, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Movpe, Gan Buffer Layer, Growth Rate, Trimethylgallium, Growth Parameters, Mechanisms, Thermal-decomposition, Quality, Ammonia, Diodes, Mocvd, Gaas, 半导体材料, atomic layer deposition, pyrolysis, mechanism, gallium arsenide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd

العلاقة: JOURNAL OF CRYSTAL GROWTH; Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY .The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,193(1-2):23-27; http://ir.semi.ac.cn/handle/172111/13098Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/13098Test

المؤلفون: Ranran Zhao, Jinzhao Huang, Xijin Xu, Minghui Shao, X. Q. Wei

المصدر: Nanoscale Research Letters

مصطلحات موضوعية: Fabrication, Materials science, genetic structures, Nano Express, Optical properties, Scanning electron microscope, business.industry, Crystal structure, Nanochemistry, Nanotechnology, Heterojunction, Substrate (electronics), Condensed Matter Physics, eye diseases, GaN buffer layer, Pulsed laser deposition, ZnO thin films, Materials Science(all), Optoelectronics, General Materials Science, Thin film, PLD, business, Layer (electronics)

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0de9a798d44cac0e35cc81325ef639aeTest
https://pubmed.ncbi.nlm.nih.gov/23448090Test

المؤلفون: Wei, Xianqi, Zhao, Ranran, Shao, Minghui, Xu, Xijin, Huang, Jinzhao

مصطلحات موضوعية: PLD, ZnO thin films, GaN buffer layer, Crystal structure, Optical properties

العلاقة: http://www.nanoscalereslett.com/content/8/1/112Test

الإتاحة: http://www.nanoscalereslett.com/content/8/1/112Test

المؤلفون: 손철수

المساهمون: 윤의준, 무기재료공학과

مصطلحات موضوعية: GaN, remote plasma-enhanced metal-organic chemical vapor deposition, 원격플라즈마 유기금속화학증착법, optical emission spectroscopy, 광학발광분광법, low temperature growth, 저온 성장, GaN buffer layer, 질소 플라즈마, nitrogen plasma

وصف الملف: xiv, 195 p.

العلاقة: http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000079654Test; http://hdl.handle.net/10371/50785Test

الإتاحة: http://hdl.handle.net/10371/50785Test
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000079654Test