دورية أكاديمية
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
| العنوان: | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
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| المؤلفون: | Krzysztof Gibasiewicz, Anna Kafar, Dario Schiavon, Kiran Saba, Łucja Marona, Eliana Kamińska, Piotr Perlin |
| المصدر: | Micromachines, Vol 14, Iss 2, p 408 (2023) |
| بيانات النشر: | MDPI AG |
| سنة النشر: | 2023 |
| المجموعة: | Directory of Open Access Journals: DOAJ Articles |
| مصطلحات موضوعية: | InGaN laser, Fabry–Perot, wet etching GaN, GaN TMAH, Mechanical engineering and machinery, TJ1-1570 |
| الوصف: | The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 2072-666X |
| العلاقة: | https://www.mdpi.com/2072-666X/14/2/408Test; https://doaj.org/toc/2072-666XTest; https://doaj.org/article/5100f264e4f54e0393103b22eb4ed70cTest |
| DOI: | 10.3390/mi14020408 |
| الإتاحة: | https://doi.org/10.3390/mi14020408Test https://doaj.org/article/5100f264e4f54e0393103b22eb4ed70cTest |
| رقم الانضمام: | edsbas.CF9FBFEC |
| قاعدة البيانات: | BASE |
Full Text Finder | تدمد: | 2072666X |
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| DOI: | 10.3390/mi14020408 |