يعرض 1 - 10 نتائج من 250,114 نتيجة بحث عن '"GALLIUM"', وقت الاستعلام: 0.78s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers.

    المؤلفون: Chichibu, Shigefusa F.1 (AUTHOR) chichibulab@yahoo.co.jp, Shima, Kohei1 (AUTHOR), Uedono, Akira2 (AUTHOR), Ishibashi, Shoji3 (AUTHOR), Iguchi, Hiroko4 (AUTHOR), Narita, Tetsuo4 (AUTHOR), Kataoka, Keita4 (AUTHOR), Tanaka, Ryo5 (AUTHOR), Takashima, Shinya5 (AUTHOR), Ueno, Katsunori5 (AUTHOR), Edo, Masaharu5 (AUTHOR), Watanabe, Hirotaka6 (AUTHOR), Tanaka, Atsushi6 (AUTHOR), Honda, Yoshio6 (AUTHOR), Suda, Jun6 (AUTHOR), Amano, Hiroshi6 (AUTHOR), Kachi, Tetsu6 (AUTHOR), Nabatame, Toshihide7 (AUTHOR), Irokawa, Yoshihiro7 (AUTHOR), Koide, Yasuo7 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/14/2024, Vol. 135 Issue 18, p1-20. 20p.

    مصطلحات موضوعية: *EPITAXIAL layers, *GALLIUM nitride, *PHOTOLUMINESCENCE, *POSITRON annihilation, *OPTOELECTRONIC devices, *MERCURY vapor, *INDIUM gallium nitride


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  2. 2
    دورية أكاديمية
    High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate.

    المؤلفون: Li, Yangfan1 (AUTHOR), Xiao, Longfei1 (AUTHOR) xiaolongfeixlf@163.com, Luan, Chongbiao2 (AUTHOR) luanchongbiao@163.com, Qin, Yan2 (AUTHOR), Sun, Xun1 (AUTHOR), Sha, Huiru1 (AUTHOR), Jiao, Jian1 (AUTHOR), Chen, Xiufang1 (AUTHOR), Li, Hongtao2 (AUTHOR), Xu, Xiangang1 (AUTHOR)

    المصدر: Journal of Applied Physics. 6/21/2024, Vol. 135 Issue 23, p1-8. 8p.

    مصطلحات موضوعية: *TWO-dimensional electron gas, *GALLIUM nitride, *SEMICONDUCTOR switches, *HETEROJUNCTIONS, *CURRENT distribution, *ELECTRIC fields


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  3. 3
    دورية أكاديمية
    Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping.

    المؤلفون: Xu, Zhiyu1 (AUTHOR) zhiyux@gatech.edu, Daeumer, Matthias A.2 (AUTHOR), Cho, Minkyu1 (AUTHOR), Yoo, Jae-Hyuck2 (AUTHOR), Detchprohm, Theeradetch1 (AUTHOR), Bakhtiary-Noodeh, Marzieh3 (AUTHOR), Shao, Qinghui2 (AUTHOR), Laurence, Ted A.2 (AUTHOR), Key, Daryl4 (AUTHOR), Letts, Edward4 (AUTHOR), Hashimoto, Tadao4 (AUTHOR), Dupuis, Russell D.1 (AUTHOR), Shen, Shyh-Chiang1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-8. 8p.

    مصطلحات موضوعية: *GALLIUM nitride, *PIN diodes, *PERSONAL identification numbers, *PHOTOLUMINESCENCE, *LUMINESCENCE


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  4. 4
    دورية أكاديمية
    Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes.

    المؤلفون: Hernandez, Nathaniel1,2 (AUTHOR), Cahay, Marc1,2 (AUTHOR) cahaymm@ucmail.uc.edu, O'Mara, Jonathan3,4 (AUTHOR), Ludwick, Jonathan2,5 (AUTHOR), Walker Jr., Dennis E.3 (AUTHOR), Back, Tyson5 (AUTHOR), Hall, Harris3 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-8. 8p.

    مصطلحات موضوعية: *FIELD emission, *GALLIUM nitride, *TWO-dimensional electron gas, *DIODES, *RECTIFICATION (Electricity)


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  5. 5
    دورية أكاديمية
    Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors.

    المؤلفون: Rawat, Ankita1 (AUTHOR), Pandey, Utkarsh2 (AUTHOR), Chourasia, Ritesh Kumar3 (AUTHOR), Rajput, Gaurav1 (AUTHOR), Pal, Bhola Nath2 (AUTHOR), Chourasia, Nitesh K.1,4 (AUTHOR), Kulriya, Pawan Kumar1 (AUTHOR) niteshphyzics@gmail.com

    المصدر: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-9. 9p.

    مصطلحات موضوعية: *THIN film transistors, *INDIUM gallium zinc oxide, *TRANSISTORS, *METALLIC oxides, *LOW voltage systems, *SEMICONDUCTOR junctions


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  6. 6
    دورية أكاديمية
    Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals.

    المؤلفون: Dub, M.1,2 (AUTHOR) mdub@unipress.waw.pl, Sai, P.1 (AUTHOR), Ivonyak, Y.1 (AUTHOR), But, D. B.1 (AUTHOR), Kacperski, J.1 (AUTHOR), Prystawko, P.1 (AUTHOR), Kucharski, R.1 (AUTHOR), Słowikowski, M.2 (AUTHOR), Cywiński, G.1 (AUTHOR), Knap, W.1,2 (AUTHOR), Rumyantsev, S.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-9. 9p.

    مصطلحات موضوعية: *PLASMONICS, *GALLIUM nitride, *CRYSTALS, *PLASMA oscillations, *FREQUENCY tuning


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  7. 7
    دورية أكاديمية
    Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property.

    المؤلفون: Hattori, Shuto1 (AUTHOR) hattori.shuto.f2@s.mail.nagoya-u.ac.jp, Oshiyama, Atsushi2 (AUTHOR), Shiraishi, Kenji1,2 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/7/2024, Vol. 135 Issue 17, p1-7. 7p.

    مصطلحات موضوعية: *ATOMIC structure, *GALLIUM nitride, *VALENCE bands


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  8. 8
    دورية أكاديمية
    Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements.

    المؤلفون: Komaba, Shintaro1 (AUTHOR), Taketa, Nana1 (AUTHOR), Asami, Meita2 (AUTHOR), Sugiyama, Masakazu2 (AUTHOR), Ikari, Tetsuo1 (AUTHOR), Fukuyama, Atsuhiko1 (AUTHOR) a-fukuyama@cc.miyazaki-u.ac.jp

    المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-9. 9p.

    مصطلحات موضوعية: *INDIUM gallium arsenide, *PHOTOLUMINESCENCE measurement, *ELECTRIC fields, *QUANTUM wells, *STARK effect, *CARRIER density, *GALLIUM arsenide, *PHOTOLUMINESCENCE


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  9. 9
    دورية أكاديمية
    1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells.

    المؤلفون: Wang, T. B.1,2 (AUTHOR), Wang, Z. X.1,2 (AUTHOR), Zhang, S. Y.1,2 (AUTHOR), Li, M.1,2 (AUTHOR), Tang, G. H.1,2 (AUTHOR), Zhuang, Y.1,2 (AUTHOR), Yang, X.1,2 (AUTHOR), Aierken, A.1,2 (AUTHOR) erkin@ynnu.edu.cn

    المصدر: Journal of Applied Physics. 2/7/2024, Vol. 135 Issue 5, p1-10. 10p.

    مصطلحات موضوعية: *INDIUM gallium arsenide, *SOLAR cells, *GALLIUM arsenide, *PHOTOVOLTAIC power systems, *AUDITING standards, *IRRADIATION, *OPEN-circuit voltage


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  10. 10
    دورية أكاديمية
    Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride.

    المؤلفون: Hirata, Kenji1 (AUTHOR) kenji.hirata@aist.go.jp, Ikemoto, Yu2 (AUTHOR), Uehara, Masato1,2 (AUTHOR), Yamada, Hiroshi1,2 (AUTHOR), Anggraini, Sri Ayu1 (AUTHOR), Akiyama, Morito1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/28/2024, Vol. 135 Issue 16, p1-10. 10p.

    مصطلحات موضوعية: *GALLIUM nitride, *PHASE transitions, *MICROELECTROMECHANICAL systems, *ELASTIC constants, *BORON nitride


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