Studies of double sided silicon microstrip detectors
| العنوان: | Studies of double sided silicon microstrip detectors |
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| المؤلفون: | Seidel, S. C., Bruner, N. L., Frautsch, M. A., Hoeferkamp, M. R., Patton, A. |
| سنة النشر: | 2024 |
| المجموعة: | SciTec Connect (Office of Scientific and Technical Information - OSTI, U.S. Department of Energy) |
| مصطلحات موضوعية: | 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY, SI SEMICONDUCTOR DETECTORS, ELECTRICAL TESTING, SILICON, LEAKAGE CURRENT, DEPLETION LAYER, SEMICONDUCTOR MATERIALS |
| الوصف: | The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors' leakage current, depletion voltage, bias resistance, interstrip, coupling capacitance, and coupling capacitor breakdown voltage were studied. |
| نوع الوثيقة: | other/unknown material |
| وصف الملف: | application/pdf |
| اللغة: | unknown |
| العلاقة: | http://www.osti.gov/servlets/purl/224752Test; https://www.osti.gov/biblio/224752Test; https://doi.org/10.1016/S0168-9002%2896%2900665-1Test |
| DOI: | 10.1016/S0168-9002%2896%2900665-1 |
| DOI: | 10.1016/S0168-9002(96)00665-1 |
| الإتاحة: | https://doi.org/10.1016/S0168-9002%2896%2900665-1Test https://doi.org/10.1016/S0168-9002Test(96)00665-1 http://www.osti.gov/servlets/purl/224752Test https://www.osti.gov/biblio/224752Test |
| رقم الانضمام: | edsbas.2719A3ED |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/S0168-9002%2896%2900665-1 |
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