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1دورية أكاديمية
المؤلفون: Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo
المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 31-39 (2024)
مصطلحات موضوعية: Content-addressable memory (CAM), ferroelectric field effect transistor (FeFET), magnetoelectric field effect transistors (MEFETs), magnetoelectric magnetic tunnel junction field effect transistor (ME-MTJ-FET), memory-augmented neural network (MANN), resistive random access memory (ReRAM), Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Heng Li Lin, Pin Su
المصدر: IEEE Open Journal of Nanotechnology, Vol 5, Pp 17-22 (2024)
مصطلحات موضوعية: Stacked nanosheet, ferroelectric field-effect transistor (FeFET), analog synapse, neuromorphic computing, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Rinku Rani Das, T. R. Rajalekshmi, Sruthi Pallathuvalappil, Alex James
المصدر: IEEE Access, Vol 12, Pp 54019-54048 (2024)
مصطلحات موضوعية: Field effect transistor (FET), CMOS, memristors, multiply and accumulate (MAC), 2D materials, FeFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Saion K. Roy, Naresh R. Shanbhag
المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 22-30 (2024)
مصطلحات موضوعية: Embedded nonvolatile memory (eNVM), ferroelectric field effect transistor (FeFET), in-memory computing (IMC), magnetoresistive random access memory (MRAM), parallel bar, resistive random access memory (ReRAM), Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Chaiwon Woo, Yannick Raffel, Ricardo Olivo, Konrad Seidel, Aleksander Gurlo
المصدر: Memories - Materials, Devices, Circuits and Systems, Vol 6, Iss , Pp 100091- (2023)
مصطلحات موضوعية: Charge pumping, Interface traps, FeFET, Hafnium oxide, Trap energy distribute, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
العلاقة: http://www.sciencedirect.com/science/article/pii/S2773064623000683Test; https://doaj.org/toc/2773-0646Test
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6دورية أكاديمية
المؤلفون: Munazza Sayed, Kai Ni, Hussam Amrouch
المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 143-150 (2023)
مصطلحات موضوعية: Emerging memory, ferroelectric field-effect transistor (FeFET), radiation, reliability, total ionizing dose (TID), X-ray, Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Yannick Raffel, Franz Müller, Sunanda Thunder, Masud Rana Sk, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Bhaswar Chakrabarti, Thomas Kämpfe, Sourav De
المصدر: Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100048- (2023)
مصطلحات موضوعية: FeFET, HfO2, Ferroelectric memory, Artificial synapse, 28 nm-HKMG, Hafnium oxide, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
العلاقة: http://www.sciencedirect.com/science/article/pii/S2773064623000257Test; https://doaj.org/toc/2773-0646Test
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8دورية أكاديمية
المؤلفون: Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe
المصدر: Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
مصطلحات موضوعية: convolutional neural network (CNN), ferroelectric field-effect transistor (FeFET), in-memory computing (IMC), nonvolatile memory (NVM), Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225
وصف الملف: electronic resource
العلاقة: https://doaj.org/toc/2640-4567Test
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9دورية أكاديمية
المؤلفون: Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 13-18 (2022)
مصطلحات موضوعية: Ferroelectric-gate field-effect transistor (FeFET), Ferroelectric devices, one transistor dynamic random-access memory (1T-DRAM), endurance characteristics of FeFET, recess channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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10دورية أكاديمية
المؤلفون: Chihiro MATSUI, Kasidit TOPRASERTPONG, Ken TAKEUCHI, Naoko MISAWA, Shinichi TAKAGI, Shinsei YOSHIKIYO
المصدر: IEICE Transactions on Electronics. 2023, E106.C(7):352