يعرض 1 - 8 نتائج من 8 نتيجة بحث عن '"Endoh Yuki"', وقت الاستعلام: 1.45s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMT Structures / チャネルスケーリングがSb系HEMT構造の電子輸送特性に及ぼす影響

    المؤلفون: Endoh Akira, Endoh Yuki, Fujishiro Hiroki, Gotow Takahiro, Hara Shinsuke, Hayashi Takuya, Hiraoka Mizuho, Kasamatsu Akifumi, Kumasaka Kounosuke, Machida Ryuto, Naoyuki Kishimoto, Shirai Shusaku, Watanabe Issei, Yamashita Yoshimi, Yoshida Naofumi, 原 紳介, 吉田 直史, 山下 良美, 岸本 尚之, 平岡 瑞穂, 後藤 高寛, 林 拓也, 渡邊 一世, 熊坂 昂之輔, 町田 龍人, 白井 脩策, 笠松 章史, 藤代 博記, 遠藤 勇輝, 遠藤 聡

    المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3446

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  2. 2
    دورية أكاديمية
    Effect of Strain in Channel on Electron Transport Properties of Ga 1−x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer

    المؤلفون: Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I.

    المصدر: physica status solidi (a) ; volume 220, issue 8 ; ISSN 1862-6300 1862-6319

    الإتاحة: https://doi.org/10.1002/pssa.202200529Test

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  3. 3
    دورية أكاديمية
    Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

    المؤلفون: Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I.

    المصدر: Physica Status Solidi. A: Applications & Materials Science; Apr2023, Vol. 220 Issue 8, p1-5, 5p

    مصطلحات موضوعية: MODULATION-doped field-effect transistors, ELECTRON transport, ELECTRON mobility, ELECTRON density, BUFFER layers, DISLOCATION density


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  4. 4
    مؤتمر
    Improved Electron Transport Properties of Ga 1-x In x Sb Quantum Well Channel Using Strained-Al 0.40 In 0.60 Sb/Al 1-y In y Sb Stepped Buffer

    المؤلفون: Hiraoka, Mizuho, Endoh, Yuki, Osawa, Koki, Kishimoto, Naoyuki, Hayashi, Takuya, Machida, Ryuto, Endoh, Akira, Fujishiro, Hiroki

    المصدر: 2019 Compound Semiconductor Week (CSW)

    الإتاحة: https://doi.org/10.1109/iciprm.2019.8819175Test
    http://xplorestaging.ieee.org/ielx7/8812288/8818988/08819175.pdf?arnumber=8819175Test

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  5. 5
    دورية أكاديمية
    Variability in water properties and predictability of sea surface temperature along Sanriku coast, Japan

    المؤلفون: Wagawa, Taku, Kuroda, Hiroshi, Ito, Shin-ichi, Kakehi, Shigeho, Yamanome, Takeshi, Tanaka, Kazushi, Endoh, Yuki, Kaga, Shinnosuke

    المصدر: Continental Shelf Research ; volume 103, page 12-22 ; ISSN 0278-4343

    مصطلحات موضوعية: Geology, Aquatic Science, Oceanography

    الإتاحة: https://doi.org/10.1016/j.csr.2015.04.016Test
    https://api.elsevier.com/content/article/PII:S0278434315001053?httpAccept=text/xmlTest
    https://api.elsevier.com/content/article/PII:S0278434315001053?httpAccept=text/plainTest

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  6. 6
    دورية
    Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

    المؤلفون: Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I.

    المصدر: Physica Status Solidi (A) - Applications and Materials Science; April 2023, Vol. 220 Issue: 8


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  7. 7
    دورية أكاديمية
    Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer.

    المؤلفون: Hiraoka, Mizuho1 (AUTHOR) 8118541@ed.tus.ac.jp, Endoh, Yuki1 (AUTHOR), Osawa, Koki1 (AUTHOR), Kishimoto, Naoyuki1 (AUTHOR), Hayashi, Takuya1 (AUTHOR), Machida, Ryuto1 (AUTHOR), Watanabe, Issei2 (AUTHOR), Yamashita, Yoshimi2 (AUTHOR), Hara, Shinsuke2 (AUTHOR), Gotow, Takahiro2 (AUTHOR), Kasamatsu, Akifumi2 (AUTHOR), Endoh, Akira1 (AUTHOR), Fujishiro, Hiroki I.1 (AUTHOR) fujisiro@rs.tus.ac.jp

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Feb2020, Vol. 217 Issue 3, pN.PAG-N.PAG. 1p.

    مصطلحات موضوعية: *QUANTUM wells, *ELECTRON mobility, *MODULATION-doped field-effect transistors, *ELECTRON transport, *BUFFER layers, *ELECTRON density


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  8. 8
    دورية
    Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer

    المؤلفون: Hiraoka, Mizuho, Endoh, Yuki, Osawa, Koki, Kishimoto, Naoyuki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Gotow, Takahiro, Kasamatsu, Akifumi, Endoh, Akira, Fujishiro, Hiroki I.

    المصدر: Physica Status Solidi (A) - Applications and Materials Science; February 2020, Vol. 217 Issue: 3


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