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1دورية أكاديمية
المؤلفون: Yuri Sinyukov, Volodymyr Shapoval, Musfer Adzhymambetov
المصدر: Universe, Vol 9, Iss 10, p 433 (2023)
مصطلحات موضوعية: kaon, pion, femtoscopy radius, emission function, emission time, particlisation, Elementary particle physics, QC793-793.5
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Yijie Wang, Fenhai Guan, Qianghua Wu, Xinyue Diao, Yan Huang, Liming Lyu, Yuhao Qin, Zhi Qin, Dawei Si, Zhen Bai, Fangfang Duan, Limin Duan, Zhihao Gao, Qiang Hu, Rongjiang Hu, Genming Jin, Shuya Jin, Junbing Ma, Peng Ma, Jiansong Wang, Peng Wang, Yufeng Wang, Xianglun Wei, Herun Yang, Yanyun Yang, Gongming Yu, Yuechao Yu, Yapeng Zhang, Qingwu Zhou, Yaofeng Zhang, Chunwang Ma, Xinrong Hu, Hongwei Wang, Yunyi Cui, Junlong Tian, Zhigang Xiao
المصدر: Physics Letters B, Vol 825, Iss , Pp 136856- (2022)
مصطلحات موضوعية: Particle emission time scale, Small angle correlation function, Symmetry energy, Heavy ion reactions, Physics, QC1-999
وصف الملف: electronic resource
العلاقة: http://www.sciencedirect.com/science/article/pii/S0370269321007966Test; https://doaj.org/toc/0370-2693Test
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3دورية أكاديمية
المؤلفون: Zhang, Meng, Jiang, Zhendong, Lu, Lei, Wong, Man, Kwok, Hoi Sing
مصطلحات موضوعية: Degradation, Emission time, Junctions, Logic gates, Nonequilibrium junction degradation model, Polycrystalline silicon, Recapture time, Reliability, Stress, Thin film transistors, Thin-film transistors, Voltage
العلاقة: https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test; IEEE Electron Device Letters, v. 45, (2), February 2024, article number 10366251, p. 204-207; https://doi.org/10.1109/LED.2023.3345282Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest; http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest
الإتاحة: https://doi.org/10.1109/LED.2023.3345282Test
https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest
http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest -
4دورية أكاديمية
المؤلفون: Dmitriy Beznosko, Elijah Holloway, Alexander Iakovlev
المصدر: Instruments; Volume 6; Issue 4; Pages: 56
مصطلحات موضوعية: scintillator, light emission spectra, light emission time, composition optimization
وصف الملف: application/pdf
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5دورية أكاديمية
المؤلفون: Huiyan Kong, Luyi Huang, Min Li, Ling Zhang, Heping Zeng
المصدر: Nanomaterials; Volume 12; Issue 2; Pages: 290
مصطلحات موضوعية: THz emission time-domain spectroscopy, cadmium telluride, metals, THz enhancement, surface plasmons
وصف الملف: application/pdf
العلاقة: Nanophotonics Materials and Devices; https://dx.doi.org/10.3390/nano12020290Test
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6دورية أكاديمية
المؤلفون: Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
المصدر: IEEE Access, Vol 8, Pp 182273-182282 (2020)
مصطلحات موضوعية: Random telegraph noise (RTN), jitters, traps, capture time, emission time, fluctuations, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Makoto MATSUI, Ryoma HARA, 原 涼馬, 松井 信
المصدر: プラズマ応用科学 / Applied Plasma Science. 2020, 28(1):9
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8
المؤلفون: A. Krakovinsky, Louis Gerrer, R. Modica, Gerard Ghibaudo, Jérôme Biscarrat, J. Cluzel, William Vandendaele, Marie-Anne Jaud, Gaudenzio Meneghesso, F. Gaillard, Steve W. Martin, Xavier Garros, A. G. Viey, R. Gwoziecki, Marc Plissonnier, Ferdinando Iucolano, Matteo Meneghini
المصدر: IEEE Transactions on Electron Devices. 68:2017-2024
مصطلحات موضوعية: 010302 applied physics, Range (particle radiation), Bias temperature instability (BTI), capture emission time (CET) map, GaN-on-Si E-mode MOS-c high-electron-mobility transistor (HEMT), power device reliability, business.industry, Gallium nitride, High-electron-mobility transistor, Activation energy, 01 natural sciences, Temperature measurement, Electronic, Optical and Magnetic Materials, Stress (mechanics), chemistry.chemical_compound, chemistry, Gate oxide, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b63c9aa645b49484cd7c1c7c1bdf3dbaTest
https://doi.org/10.1109/ted.2021.3050127Test -
9
مصطلحات موضوعية: gridmap, inventory, emission time series, VOC speciation, volatile organic compounds (VOC)
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10
مصطلحات موضوعية: gridmap, inventory, emission time series, VOC speciation, volatile organic compounds (VOC)