Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD

التفاصيل البيبلوغرافية
العنوان: Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD
المؤلفون: Chyczewski, Stasiu Thomas, Lee, Hanwool, Li, Shuchen, Eladl, Marwan, Zheng, Jun-Fei, Hoffmann, Axel, Zhu, Wenjuan
سنة النشر: 2024
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science
الوصف: The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$ MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.
Comment: 13 pages total, 5 figures. To be submitted
نوع الوثيقة: Working Paper
الوصول الحر: http://arxiv.org/abs/2404.19135Test
رقم الانضمام: edsarx.2404.19135
قاعدة البيانات: arXiv