المؤلفون: Muhammad Muzammil, Khan Naik Naam, Muhammad Fareed, Mirza Shafaat Hussain, Muhammad Zulfiqar

المصدر: Chemical Physics Impact, Vol 8, Iss , Pp 100407- (2024)

مصطلحات موضوعية: Lead-free perovskite solar cells, ETL, HTL, Electrons and holes recombination, Device simulation, High efficiency, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2667022423002463Test; https://doaj.org/toc/2667-0224Test

الوصول الحر: https://doaj.org/article/d181fada274a44cbbb4f335056dd0a00Test

المؤلفون: Yunyi Qi, Peter Michael Gammon, Arne Benjamin Renz, Viren Kotagama, Guy William Clarke Baker, Marina Antoniou

المصدر: Power Electronic Devices and Components, Vol 8, Iss , Pp 100068- (2024)

مصطلحات موضوعية: Single event immunity, Single event effects, Schottky diode, Silicon carbide, Device simulation, Radiation hardening, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2772370424000130Test; https://doaj.org/toc/2772-3704Test

الوصول الحر: https://doaj.org/article/f50fc2947c684030a191c90ee4b01e6dTest

المؤلفون: Akira Hiroki, Ryo Takanishi, 廣木 彰, 高西 諒

المصدر: 電気学会論文誌Ｃ（電子・情報・システム部門誌） / IEEJ Transactions on Electronics, Information and Systems. 2024, 144(2):82

المؤلفون: Roldán, J.B., Cantudo, A., Maldonado, D., Aguilera-Pedregosa, C., Moreno, Eulalia, Swoboda, T., Jiménez-Molinos, F., Yuan, Y., Zhu, K., Lanza, M., Muñoz Rojo, Miguel

المساهمون: Agencia Estatal de Investigación (España), King Abdullah University of Science and Technology

مصطلحات موضوعية: device simulation, memristor, modeling, resistive switching, thermal analysis, variability analysis

العلاقة: #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-139586NB-C44/ES/MODELADO Y SIMULACION FISICA DE DISPOSITIVOS MEMRISTIVOS/; ACS Applied Electronic Materials; Publisher's version; https://doi.org/10.1021/acsaelm.3c01727Test; Sí; ACS Applied Electronic Materials 2024, 6, 1424–1433; 26376113 (ISSN); http://hdl.handle.net/10261/360079Test; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85185579749&doi=10.1021%2facsaelm.3c01727&partnerID=40&md5=274aef4cbed0f7e313f7e5997e2f5f31Test

الإتاحة: https://doi.org/10.1021/acsaelm.3c01727Test
http://hdl.handle.net/10261/360079Test

المؤلفون: Passeri, D, Morozzi, A, Fabi, M, Grimani, C, Pallotta, S, Sabbatini, F, Talamonti, C, Villani, M, Calcagnile, L, Caricato, AP, Martino, M, Maruccio, G, Monteduro, AG, Quarta, G, Rizzato, S, Catalano, R, Cirrone, GAP, Cuttone, G, Petringa, G, Frontini, L, Liberali, V, Stabile, A, Croci, T, Ionica, M, Kanxheri, K, Menichelli, M, Moscatelli, F, Pedio, M, Peverini, F, Placidi, P, Tosti, L, Rossi, G, Servoli, L, Zema, N, Mazza, G, Piccolo, L, Wheadon, R, Antognini, L, Dunand, S, Wyrsch, N, Bashiri, A, Large, M, Petasecca, M

المساهمون: Passeri, D, Morozzi, A, Fabi, M, Grimani, C, Pallotta, S, Sabbatini, F, Talamonti, C, Villani, M, Calcagnile, L, Caricato, Ap, Martino, M, Maruccio, G, Monteduro, Ag, Quarta, G, Rizzato, S, Catalano, R, Cirrone, Gap, Cuttone, G, Petringa, G, Frontini, L, Liberali, V, Stabile, A, Croci, T, Ionica, M, Kanxheri, K, Menichelli, M, Moscatelli, F, Pedio, M, Peverini, F, Placidi, P, Tosti, L, Rossi, G, Servoli, L, Zema, N, Mazza, G, Piccolo, L, Wheadon, R, Antognini, L, Dunand, S, Wyrsch, N, Bashiri, A, Large, M, Petasecca, M

مصطلحات موضوعية: TCAD, Amorphous silicon, Particle detectors, Device simulation

وصف الملف: STAMPA

العلاقة: info:eu-repo/semantics/altIdentifier/wos/WOS:001091959200001; volume:169; numberofpages:7; journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; https://hdl.handle.net/11587/506974Test; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85173535556; https://www.sciencedirect.com/science/article/pii/S1369800123005632Test

الإتاحة: https://doi.org/10.1016/j.mssp.2023.107870Test
https://hdl.handle.net/11587/506974Test
https://www.sciencedirect.com/science/article/pii/S1369800123005632Test

المؤلفون: Juan B. Roldán, Antonio Cantudo, David Maldonado, Cristina Aguilera-Pedregosa, Enrique Moreno, Timm Swoboda, Francisco Jiménez-Molinos, Yue Yuan, Kaichen Zhu, Mario Lanza, Miguel Muñoz Rojo

مصطلحات موضوعية: Biophysics, Medicine, Biotechnology, Ecology, Cancer, Hematology, Plant Biology, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, resistive switching analysis, scanning thermal microscopy, top device surface, thermal measurements instead, thermal compact modeling, standard electrical characterization, thermal responses, thermal resistance, experimental measurements, compact models, device variability, device simulation, whose value, titanium oxide, single fitting, simultaneously recorded, series resistance, reset voltages, operando tracking, indirectly supported

العلاقة: https://figshare.com/articles/journal_contribution/Thermal_Compact_Modeling_and_Resistive_Switching_Analysis_in_Titanium_Oxide-Based_Memristors/25224732Test

الإتاحة: https://doi.org/10.1021/acsaelm.3c01727.s001Test
https://figshare.com/articles/journal_contribution/Thermal_Compact_Modeling_and_Resistive_Switching_Analysis_in_Titanium_Oxide-Based_Memristors/25224732Test

المؤلفون: Srivastava, Pooja, Upadhyaya, Aditi, Yadav, Shekhar, Negi, C.M.S.

المصدر: Semiconductor Science and Information Devices; Vol. 5 , Iss. 2 (October 2023); 1-10 ; 2661-3212

مصطلحات موضوعية: Short channel effects, Drain-induced barrier lowering, Subthreshold slope, Gate-all-around junction less FET, Device simulation

وصف الملف: application/pdf

العلاقة: https://journals.bilpubgroup.com/index.php/ssid/article/view/6075/5088Test; https://journals.bilpubgroup.com/index.php/ssid/article/view/6075Test

الإتاحة: https://journals.bilpubgroup.com/index.php/ssid/article/view/6075Test

المؤلفون: Zhi-Ping Huang, You-Xian Chen, Zi-Heng Huang, Wen-Wei Lin, Yu Mao, Li-Mei Lin, Li-Quan Yao, Hu Li, Li-Ping Cai, Gui-Lin Chen

المصدر: Heliyon, Vol 9, Iss 8, Pp e18776- (2023)

مصطلحات موضوعية: Device simulation, SCAPS, Thin film solar cell, GeSe, Science (General), Q1-390, Social sciences (General), H1-99

وصف الملف: electronic resource

العلاقة: http://www.sciencedirect.com/science/article/pii/S2405844023059844Test; https://doaj.org/toc/2405-8440Test

الوصول الحر: https://doaj.org/article/2005769a548340178e6afadd587fe6b2Test

المؤلفون: Cherkaoui, K., La Torraca, P., Lin, J., Maraviglia, N., Andersen, A., Wernersson, L. E., Padovani, A., Larcher, L., Hurley, P. K.

المصدر: Solid-State Electronics NanoLund: Centre for Nanoscience. 207

مصطلحات موضوعية: Cryogenic impedance measurements, Device simulation, High-k/InGaAs interface defects, Oxide defects, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

الوصول الحر: https://lup.lub.lu.se/record/8f7067e5-fe2d-4968-a64e-95ecf6d50859Test
http://dx.doi.org/10.1016/j.sse.2023.108719Test

المؤلفون: John E. Tiessen, Jaroslaw Pawlowski, Rockwell Dax, Junxia Lucy Shi

المصدر: IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-8 (2023)

مصطلحات موضوعية: Device simulation, finite-difference method (FDM), numerical modeling, quantum engineering, technology computer-aided design (TCAD), Atomic physics. Constitution and properties of matter, QC170-197, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

العلاقة: https://ieeexplore.ieee.org/document/10115473Test/; https://doaj.org/toc/2689-1808Test

الوصول الحر: https://doaj.org/article/d54e8f778ba24359ae84456a56a54f60Test