يعرض 1 - 10 نتائج من 58 نتيجة بحث عن '"Dawant, Raphaël"', وقت الاستعلام: 1.69s تنقيح النتائج
  1. 1
    تقرير
    Towards scalable cryogenic quantum dot biasing using memristor-based DC sources

    المؤلفون: Mouny, Pierre-Antoine, Dawant, Raphaël, Dufour, Patrick, Valdenaire, Matthieu, Ecoffey, Serge, Pioro-Ladrière, Michel, Beillard, Yann, Drouin, Dominique

    مصطلحات موضوعية: Computer Science - Emerging Technologies, Physics - Applied Physics

    الوصول الحر: http://arxiv.org/abs/2404.10694Test

    View record in Arxiv

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  2. 2
    تقرير
    Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

    المؤلفون: Mouny, Pierre-Antoine, Dawant, Raphaël, Galaup, Bastien, Ecoffey, Serge, Pioro-Ladrière, Michel, Beilliard, Yann, Drouin, Dominique

    مصطلحات موضوعية: Physics - Applied Physics, Computer Science - Emerging Technologies

    الوصول الحر: http://arxiv.org/abs/2307.15538Test

    View record in Arxiv

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  3. 3
    تقرير
    Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars

    المؤلفون: Drolet, Philippe, Dawant, Raphaël, Yon, Victor, Mouny, Pierre-Antoine, Valdenaire, Matthieu, Zapata, Javier Arias, Gliech, Pierre, Wood, Sean U. N., Ecoffey, Serge, Alibart, Fabien, Beilliard, Yann, Drouin, Dominique

    مصطلحات موضوعية: Computer Science - Hardware Architecture, Computer Science - Machine Learning

    الوصول الحر: http://arxiv.org/abs/2305.18495Test

    View record in Arxiv

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  4. 4
    تقرير
    Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

    المؤلفون: Mouny, Pierre-Antoine, Beilliard, Yann, Graveline, Sébastien, Roux, Marc-Antoine, Mesoudy, Abdelouadoud El, Dawant, Raphaël, Gliech, Pierre, Ecoffey, Serge, Alibart, Fabien, Pioro-Ladrière, Michel, Drouin, Dominique

    مصطلحات موضوعية: Computer Science - Hardware Architecture, Quantum Physics

    الوصول الحر: http://arxiv.org/abs/2203.07107Test

    View record in Arxiv

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  5. 5
    تقرير
    Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

    المؤلفون: Mesoudy, Abdelouadoud El, Lamri, Gwénaëlle, Dawant, Raphaël, Arias-Zapata, Javier, Gliech, Pierre, Beilliard, Yann, Ecoffey, Serge, Ruediger, Andreas, Alibart, Fabien, Drouin, Dominique

    مصطلحات موضوعية: Computer Science - Emerging Technologies, Physics - Applied Physics

    الوصول الحر: http://arxiv.org/abs/2106.11808Test

    View record in Arxiv

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  6. 6
    دورية أكاديمية
    Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration

    المؤلفون: Dawant, Raphaël, Gaudreau, Matthieu, Roy, Marc-Antoine, Mouny, Pierre-Antoine, Valdenaire, Matthieu, Gliech, Pierre, Arias-Zapata, Javier, Zegaoui, Malek, Alibart, F., Drouin, Dominique, Ecoffey, Serge

    المساهمون: Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée - UAR 3380 (IRCICA), Université de Lille-Centre National de la Recherche Scientifique (CNRS), "This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) HIDATA project 506289-2017 and Mitacs Accelerate program IT19472. "

    المصدر: ISSN: 2590-0072 ; Micro and Nano Engineering ; https://hal.science/hal-04607951Test ; Micro and Nano Engineering, 2024, 23, pp.100251. ⟨10.1016/j.mne.2024.100251⟩.

    مصطلحات موضوعية: CMP, Resistive memory, Crossbar array, Damascene, Subtractive line, BEOL, Integration, [PHYS]Physics [physics], [SPI]Engineering Sciences [physics]

    العلاقة: hal-04607951; https://hal.science/hal-04607951Test; https://hal.science/hal-04607951/documentTest; https://hal.science/hal-04607951/file/1-s2.0-S2590007224000145-main.pdfTest

    الإتاحة: https://doi.org/10.1016/j.mne.2024.100251Test
    https://hal.science/hal-04607951Test
    https://hal.science/hal-04607951/documentTest
    https://hal.science/hal-04607951/file/1-s2.0-S2590007224000145-main.pdfTest

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  7. 7
    دورية أكاديمية
    Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control

    المؤلفون: Mouny, Pierre-Antoine, Beilliard, Yann, Graveline, Sébastien, Roux, Marc-Antoine, El Mesoudy, Abdelouadoud, Dawant, Raphaël, Gliech, Pierre, Ecoffey, Serge, Alibart, F., Pioro-Ladrière, Michel, Drouin, Dominique

    المساهمون: Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Quantique Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), ACKNOWLEDGMENTData Availability: The Python library that was developed to simulate the control performed by the proposed dc source is available at GitHub. Data supporting this work will be uploaded to an online repository.This work was supported in part by the Natural Sciences and Engineering Research Council of Canada(NSERC), in part by the Canada First Research Excellence Fund, in part by the Canada First Research Excellence Fund in part by Laboratoire Nanotechnologies Nanosystèmes (LN2), which is aFrench–Canadian Joint International Research Laboratory (IRL-3463), funded and co-operated by Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke, Université de Grenoble Alpes (UGA), École Centrale Lyon (ECL), and Institut National des Sciences Appliquées (INSA) Lyon, and in part by the Fonds de Recherche du Québec Nature et Technologie (FRQNT).

    المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04053335Test ; IEEE Transactions on Electron Devices, 2023, 70 (4), pp.1989-1995. ⟨10.1109/TED.2023.3244133⟩.

    مصطلحات موضوعية: Memristors, Resistance, Qubit, Voltage, Cryogenics, Logic gates, Power dissipation, [SPI.TRON]Engineering Sciences [physics]/Electronics

    العلاقة: info:eu-repo/semantics/altIdentifier/arxiv/2203.07107; hal-04053335; https://hal.science/hal-04053335Test; https://hal.science/hal-04053335/documentTest; https://hal.science/hal-04053335/file/Memristor-Based%20Cryogenic%20Programmable%20DC%20Sources%20for%20Scalable%20In%20Situ%20Quantum-Dot%20Control.pdfTest; ARXIV: 2203.07107

    الإتاحة: https://doi.org/10.1109/TED.2023.3244133Test
    https://hal.science/hal-04053335Test
    https://hal.science/hal-04053335/documentTest
    https://hal.science/hal-04053335/file/Memristor-Based%20Cryogenic%20Programmable%20DC%20Sources%20for%20Scalable%20In%20Situ%20Quantum-Dot%20Control.pdfTest

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  8. 8
    دورية أكاديمية
    Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

    المؤلفون: El Mesoudy, Abdelouadoud, Lamri, Gwénaëlle, Dawant, Raphaël, Arias-Zapata, Javier, Gliech, Pierre, Beilliard, Yann, Ecoffey, Serge, Ruediger, Andreas, Alibart, Fabien, Drouin, Dominique

    المساهمون: Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), Institut National de la Recherche Scientifique Québec (INRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) HIDATA project 506289-2017 and ERC-CoG IONOS (# GA 773228). A.R. gratefully acknowledges financial support through an NSERC discovery grant (RGPIN-2019-07023). This work was also supported by the CHIST-ERA UNICO project and Fond de Recherche du Québec Nature et Technologies (FRQNT). We would like to acknowledge Abdelatif Jaouad, Julien Pezard, and 3IT.Nano platform for their valuable support with device fabrication. We would also like to thank Yuanyang Guo for her assistance with electrical characterisation., ANR-19-CHR3-0006,UNICO,Unsupervised spiking neural networks with analog memristive devices for edge computing(2019), European Project: 773228,H2020,ERC-2017-COG,IONOS(2018)

    المصدر: ISSN: 0167-9317.

    مصطلحات موضوعية: Resistive switching, Artificial synapse, Memristor crossbars, CMOS-compatible, Damascene, [SPI]Engineering Sciences [physics]

    العلاقة: info:eu-repo/semantics/altIdentifier/arxiv/2106.11808; info:eu-repo/grantAgreement//773228/EU/An iono-electronic neuromorphic interface for communication with living systems/IONOS; hal-03679659; https://hal.science/hal-03679659Test; https://hal.science/hal-03679659/documentTest; https://hal.science/hal-03679659/file/El%20Mesoudy_2106.11808.pdfTest; ARXIV: 2106.11808

    الإتاحة: https://doi.org/10.1016/j.mee.2021.111706Test
    https://hal.science/hal-03679659Test
    https://hal.science/hal-03679659/documentTest
    https://hal.science/hal-03679659/file/El%20Mesoudy_2106.11808.pdfTest

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  9. 9
    دورية أكاديمية
    Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming.

    المؤلفون: Mouny, Pierre-Antoine1,2,3 (AUTHOR) pierre-antoine.mouny@usherbrooke.ca, Dawant, Raphaël1,2 (AUTHOR), Galaup, Bastien1,2 (AUTHOR), Ecoffey, Serge1,2 (AUTHOR), Pioro-Ladrière, Michel2,3 (AUTHOR), Beilliard, Yann1,2,3 (AUTHOR), Drouin, Dominique1,2,3 (AUTHOR)

    المصدر: Applied Physics Letters. 10/16/2023, Vol. 123 Issue 16, p1-7. 7p.

    مصطلحات موضوعية: *METAL-insulator transitions, *CRYOELECTRONICS, *QUANTUM computing, *MEMRISTORS, *LOW temperatures, *STEAM reforming

    الشركة/الكيان: MASSACHUSETTS Institute of Technology


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  10. 10
    دورية أكاديمية
    Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

    المؤلفون: Mouny, Pierre-Antoine, Dawant, Raphaël, Galaup, Bastien, Ecoffey, Serge, Pioro-Ladrière, Michel, Beilliard, Yann, Drouin, Dominique

    المساهمون: Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS)

    المصدر: ISSN: 0003-6951.

    مصطلحات موضوعية: [SPI]Engineering Sciences [physics]

    العلاقة: hal-04298938; https://hal.science/hal-04298938Test

    الإتاحة: https://doi.org/10.1063/5.0170058Test
    https://hal.science/hal-04298938Test

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