يعرض 1 - 10 نتائج من 404 نتيجة بحث عن '"Cousineau, Marc"', وقت الاستعلام: 1.05s تنقيح النتائج
  1. 1
    مؤتمر
    CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules

    المؤلفون: El Boubkari, Anas, Rouger, Nicolas, Richardeau, Frédéric, Cousineau, Marc, Sicard, Thierry, Calmes, Pierre, Bacchi, Matthew

    المساهمون: NXP Semiconductors France, Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Hong Kong University of Science and Technology (HKUST), https://ieeexplore.ieee.org/document/10147567Test

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD)
    https://hal.science/hal-04132615Test
    2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩

    مصطلحات موضوعية: SiC MOSFET, CMOS, Gate Driver, Current sensing, Short-Circuit, Detection, Gate-Charge, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

    جغرافية الموضوع: Hong Kong, France

    العلاقة: hal-04132615; https://hal.science/hal-04132615Test; https://hal.science/hal-04132615/documentTest; https://hal.science/hal-04132615/file/ARTICLE_ISPSD2023%20-%20Anas%20-%20HAL.pdfTest

    الإتاحة: https://doi.org/10.1109/ispsd57135.2023.10147567Test
    https://hal.science/hal-04132615Test
    https://hal.science/hal-04132615/documentTest
    https://hal.science/hal-04132615/file/ARTICLE_ISPSD2023%20-%20Anas%20-%20HAL.pdfTest

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  2. 2
    مؤتمر
    CMOS gate driver for SiC power modules

    المؤلفون: El Boubkari, Anas, Rouger, Nicolas, Richardeau, Frédéric, Cousineau, Marc, Calmes, Pierre, Sicard, Thierry, Bacchi, Matthew

    المساهمون: NXP Semiconductors France, Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Ecole Doctorale GEET

    المصدر: Congrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse ; https://hal.science/hal-04132694Test ; Congrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.plTest

    مصطلحات موضوعية: SiC MOSFET, Court-Circuit, Gate-Driver, CMOS, Gate-Charge, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

    جغرافية الموضوع: Toulouse, France

    العلاقة: hal-04132694; https://hal.science/hal-04132694Test; https://hal.science/hal-04132694/documentTest; https://hal.science/hal-04132694/file/Final_Article_GEET_Fran%C3%A7ais-HAL.pdfTest

    الإتاحة: https://hal.science/hal-04132694Test
    https://hal.science/hal-04132694/documentTest
    https://hal.science/hal-04132694/file/Final_Article_GEET_Fran%C3%A7ais-HAL.pdfTest

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  3. 3
    مؤتمر
    Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

    المؤلفون: Masson, Matthieu, Cousineau, Marc, Rouger, Nicolas, C., Richardeau, Frédéric

    المساهمون: Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), NXP Semiconductors France

    المصدر: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
    https://hal.science/hal-04254245Test
    2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩

    مصطلحات موضوعية: SiC MOSFET, Device characterisation, Experimental testing, Double pulse test, DC-DC power converter, [SPI.NRJ]Engineering Sciences [physics]/Electric power

    جغرافية الموضوع: Aalborg, Denmark

    العلاقة: hal-04254245; https://hal.science/hal-04254245Test; https://hal.science/hal-04254245/documentTest; https://hal.science/hal-04254245/file/EPE_2023_fullpaper_Author.pdfTest

    الإتاحة: https://doi.org/10.23919/epe23ecceeurope58414.2023.10264635Test
    https://hal.science/hal-04254245Test
    https://hal.science/hal-04254245/documentTest
    https://hal.science/hal-04254245/file/EPE_2023_fullpaper_Author.pdfTest

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  4. 4
    مؤتمر
    Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFET

    المؤلفون: Elboubkari, Anas, Masson, Matthieu, Rouger, Nicolas, C., Cousineau, Marc, Richardeau, Frédéric, Bacchi, Matthew, Blaquière, Jean-Marc, Laborde, Alexandre, Vinnac, Sébastien, Flumian, Didier, Calmes, Pierre

    المساهمون: Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), NXP Semiconductors France

    المصدر: SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023) ; https://hal.science/hal-04157854Test ; SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France ; https://sge2023.sciencesconf.org/resource/page/id/35Test

    مصطلحات موضوعية: Commande rapprochée modules SiC intégration CMOS protection court-circuit, Commande rapprochée, modules SiC, intégration CMOS, protection court-circuit, optimsation temps-mort, [SPI.NRJ]Engineering Sciences [physics]/Electric power

    جغرافية الموضوع: Lille, France

    العلاقة: hal-04157854; https://hal.science/hal-04157854Test; https://hal.science/hal-04157854/documentTest; https://hal.science/hal-04157854/file/SGE2023_HAL_version.pdfTest

    الإتاحة: https://hal.science/hal-04157854Test
    https://hal.science/hal-04157854/documentTest
    https://hal.science/hal-04157854/file/SGE2023_HAL_version.pdfTest

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  5. 5
    دورية أكاديمية
    Early-stage HF-EMC Simulation Analyses of Common-Mode Current in SiC-Based Motor Drive System for Modern Aircraft Applications

    المؤلفون: Almeida, Gregory, Cousineau, Marc, Rouger, Nicolas, C., Serpaud, Sébastien, Santos, Victor Dos, Cougo, Bernardo, Guedon, Davin, Crepel, Olivier, Perraud, Richard

    المساهمون: Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), IRT Saint Exupéry - Institut de Recherche Technologique, Safran Tech, Airbus France, The authors acknowledge the financial and in-kind assistance from the IRT Saint Exupery members, industrial members (AIRBUS Central Research and Technology, STMicroelectronics, Deep Concept, Wolfspeed, and ANSYS), academic members (LAPLACE), and the financial support of the French National Research Agency.

    المصدر: ISSN: 2577-4212.

    مصطلحات موضوعية: [SPI.NRJ]Engineering Sciences [physics]/Electric power

    العلاقة: hal-04255888; https://hal.science/hal-04255888Test; https://hal.science/hal-04255888/documentTest; https://hal.science/hal-04255888/file/ACCEPTED_FINAL_VERSION_IEEE_TTE_2023_vF.pdfTest

    الإتاحة: https://doi.org/10.1109/TTE.2023.3311621Test
    https://hal.science/hal-04255888Test
    https://hal.science/hal-04255888/documentTest
    https://hal.science/hal-04255888/file/ACCEPTED_FINAL_VERSION_IEEE_TTE_2023_vF.pdfTest

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  6. 6
    مؤتمر
    CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules

    المؤلفون: El Boubkari, Anas, Rouger, Nicolas, Richardeau, Frédéric, Calmes, Pierre, Bacchi, Matthew, Blaquiere, Jean-Marc, Vinnac, Sebastien, Cousineau, Marc

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    الإتاحة: https://doi.org/10.1109/ispsd59661.2024.10579581Test
    http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579581.pdf?arnumber=10579581Test

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  7. 7
    دورية أكاديمية
    A Fully Differential CMOS Current Memory Cell for Space-Embedded Analog-to-Digital Converters

    المؤلفون: Bernal, Olivier, Cousineau, Marc, Lescure, Marc

    المصدر: IEEE Transactions on Instrumentation and Measurement ; page 1-1 ; ISSN 0018-9456 1557-9662

    الإتاحة: https://doi.org/10.1109/tim.2008.922089Test
    http://xplorestaging.ieee.org/ielx5/19/4407674/04529085.pdf?arnumber=4529085Test

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  8. 8
    دورية أكاديمية
    Early-Stage HF-EMC Simulation Analyses of Common-Mode Current in SiC-Based Motor Drive System for Modern Aircraft Applications

    المؤلفون: Almeida, Gregory, Cousineau, Marc, Rouger, Nicolas, Serpaud, Sébastien, Santos, Victor Dos, Cougo, Bernardo, Guedon, Davin, Crepel, Olivier, Perraud, Richard

    المصدر: IEEE Transactions on Transportation Electrification ; volume 10, issue 2, page 4393-4406 ; ISSN 2332-7782 2372-2088

    الإتاحة: https://doi.org/10.1109/tte.2023.3311621Test
    http://xplorestaging.ieee.org/ielx7/6687316/10555391/10243108.pdf?arnumber=10243108Test

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  9. 9
    دورية أكاديمية
    Real-Time Adaptive Selective Harmonic Elimination for Cascaded Full-Bridge Multilevel Inverter

    المؤلفون: Vivert, Miguel, Diez, Rafael, Cousineau, Marc, Bernal Cobaleda, Diego, Patino, Diego, Ladoux, Philippe

    المساهمون: Pontificia Universidad Javeriana (PUJ), Universidad Técnica del Norte (UTN), Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Department of Electrical Engineering Leuven (ESAT), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven)

    المصدر: ISSN: 1996-1073 ; Energies ; https://hal.science/hal-04283960Test ; Energies, 2022, 15 (9), pp.2995. ⟨10.3390/en15092995⟩ ; https://www.mdpi.com/1996-1073/15/9/2995Test.

    مصطلحات موضوعية: [SPI.NRJ]Engineering Sciences [physics]/Electric power

    العلاقة: hal-04283960; https://hal.science/hal-04283960Test; https://hal.science/hal-04283960/documentTest; https://hal.science/hal-04283960/file/energies-15-02995.pdfTest

    الإتاحة: https://doi.org/10.3390/en15092995Test
    https://hal.science/hal-04283960Test
    https://hal.science/hal-04283960/documentTest
    https://hal.science/hal-04283960/file/energies-15-02995.pdfTest

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  10. 10
    مؤتمر
    Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gap

    المؤلفون: Bau, Plinio, Cousineau, Marc, Cougo, Bernardo, Richardeau, Frédéric, Rouger, Nicolas, C.

    المساهمون: IRT Saint Exupéry - Institut de Recherche Technologique, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Convertisseurs Statiques (LAPLACE-CS), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3)

    المصدر: Symposium de Génie Electrique 2021 ; https://hal.science/hal-02966771Test ; Symposium de Génie Electrique 2021, Jul 2021, Nantes, France

    مصطلحات موضوعية: Active Gate Driver, Circuit CMOS, Electronique analogique, Electronique de puissance, Semiconducteur à grand-gap, MOSFET SiC, HEMT GaN, Compatibilité Electro-Magnétique (CEM), [SPI.NRJ]Engineering Sciences [physics]/Electric power

    جغرافية الموضوع: Nantes, France

    العلاقة: hal-02966771; https://hal.science/hal-02966771Test; https://hal.science/hal-02966771/documentTest; https://hal.science/hal-02966771/file/SGE_2020_Plinio_v10_HAL.pdfTest

    الإتاحة: https://hal.science/hal-02966771Test
    https://hal.science/hal-02966771/documentTest
    https://hal.science/hal-02966771/file/SGE_2020_Plinio_v10_HAL.pdfTest

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