دورية أكاديمية

Directional Crystallization from the Melt of an Organic p‑Type and n‑Type Semiconductor Blend

التفاصيل البيبلوغرافية
العنوان: Directional Crystallization from the Melt of an Organic p‑Type and n‑Type Semiconductor Blend
المؤلفون: Guangfeng Liu (1614886), Jie Liu (15128), Andrew S. Dunn (11320239), Peter Nadazdy (3797191), Peter Siffalovic (3797185), Roland Resel (1275975), Mamatimin Abbas (1719544), Guillaume Wantz (1424086), Yves Henri Geerts (1864393)
سنة النشر: 2021
المجموعة: Smithsonian Institution: Digital Repository
مصطلحات موضوعية: Biophysics, Medicine, Science Policy, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, C 8-BTBT, variable-temperature X-ray diffraction, phase behavior, C 8-BTBT Directional crystallizatio., C 8-BTBT tetracyanoquinodimethane, TCNQ, C 8-BTBT charge-transfer complexes, C 8-BTBT donor, confocal Raman imaging, digitated growth mode, C 8-BTBT CT crystallites
الوصف: Directional crystallization from the melt has been used as a tool to grow parallel crystalline stripes of p- and n-type molecular semiconductors. To start, the phase behavior of 2,7-dioctyl[1]­benzothieno­[3,2- b ]­[1]­benzothiophene (C8-BTBT-C8): tetracyanoquinodimethane (TCNQ) blends (molar ratio from 20:1 to 1:1) has been investigated by variable-temperature X-ray diffraction, differential scanning calorimetry, and polarized optical microscopy. The partial charge transfer between the C8-BTBT-C8 donor and the TCNQ acceptor as a function of temperature has been studied. Blends of 10:1 and 20:1 have been selected for directional crystallization because they show similar thermotropic and phase behavior comparable to that of pure C8-BTBT-C8. Directional crystallization results suggest that moderate cooling rates (6 and 12 °C min –1 ) leads to a digitated growth mode that gives rise to parallel crystalline stripes of C8-BTBT-C8 and C8-BTBT-C8-TCNQ charge-transfer complexes (C8-BTBT-C8-TCNQ CT), as confirmed by confocal Raman imaging. X-ray diffraction reveals high preferential orientation and good in-plane alignment for both C8-BTBT-C8 and C8-BTBT-C8-TCNQ CT crystallites.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
العلاقة: https://figshare.com/articles/journal_contribution/Directional_Crystallization_from_the_Melt_of_an_Organic_p_Type_and_n_Type_Semiconductor_Blend/16413276Test
DOI: 10.1021/acs.cgd.1c00570.s001
الإتاحة: https://doi.org/10.1021/acs.cgd.1c00570.s001Test
حقوق: CC BY-NC 4.0
رقم الانضمام: edsbas.DE2294A8
قاعدة البيانات: BASE