دورية أكاديمية
Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations
| العنوان: | Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations |
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| المؤلفون: | Mancini, Stephen A., Jang, Seung Yup, Chen, Zeyu, Kim, Dongyoung, Bialy, Alex, Raghotamacher, Balaji, Dudley, Michael, Mahadik, Nadeemullah, Stahlbush, Robert, Al-Jassim, Mowafak, Sung, Woongje |
| المساهمون: | National Renewable Energy Laboratory (“NREL”), U.S. Department of Energy, the Advanced Manufacturing Office |
| المصدر: | IEEE Journal of the Electron Devices Society ; volume 12, page 150-158 ; ISSN 2168-6734 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2024 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Biotechnology |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/jeds.2024.3359974 |
| الإتاحة: | https://doi.org/10.1109/jeds.2024.3359974Test https://ieeexplore.ieee.org/ielam/6245494/10416702/10416803-aam.pdfTest http://xplorestaging.ieee.org/ielx7/6245494/10416702/10416803.pdf?arnumber=10416803Test |
| حقوق: | https://creativecommons.org/licenses/by-nc-nd/4.0Test/ ; https://creativecommons.org/licenses/by-nc-nd/4.0Test/ |
| رقم الانضمام: | edsbas.22D266CE |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/jeds.2024.3359974 |
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