المؤلفون: Xiao, Z. R., Zhu, H. L., Wang, Q., Chen, Z., Liu, Z. Y., Zhang, Y. K., Yan, Z. J., Shi, Y. F., Zhou, N., Li, J. J., Gao, J. F., Ai, X. Z., Lu, S. S., Huang, W. X., Xiong, W. J., Kong, Z. Z., Xiang, J. J., Zhang, Y., Zhao, J., Liu, J. B., Lu, Y. H., Bai, G. B., He, X. B., Du, A. Y., Yang, H., Yang, T., Wu, Z. H., Li, J. F., Luo, J., Wang, W. W., Ye, T. C.

المساهمون: Vertical Gate-All-Around for Dynamic Random Access Memory (DRAM) and Process Development under Beijing Superstring Academy Memory Technology

المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 3, page 1380-1385 ; ISSN 0018-9383 1557-9646

الإتاحة: https://doi.org/10.1109/ted.2023.3239048Test
http://xplorestaging.ieee.org/ielx7/16/10053598/10035482.pdf?arnumber=10035482Test

المؤلفون: Yin, X., Yang, H., Xie, L., Ai, X. Z., Zhang, Y. B., Jia, K. P., Wu, Z. H., Ma, X. L., Zhang, Q. Z., Mao, S. J., Xiang, J. J., Zhang, Y., Gao, J. F., He, X. B., Bai, G. B., Lu, Y. H., Zhou, N., Kong, Z. Z., Zhao, J., Ma, S. S., Xuan, Z. H., Zhu, H., Li, Y. Y., Li, L., Zhang, Q. H., Han, J. H., Chen, R. L., Qu, Y., Yang, T., Luo, J., Li, J. F., Yin, H. X., Wang, G. L., Radamson, Henry H., Zhao, C., Wang, W. W., Ye, T. C., Li, J. J., Du, A. Y., Li, C., Zhao, L. H., Huang, W. X.

المصدر: IEEE Electron Device Letters. 41(1):8-11

مصطلحات موضوعية: atomic layer etching (ALE), gate-all-around (GAA), Si cap, SiGe channel, Vertical nanowire, Etching, Gates (transistor), Nanowires, Atomic layer etching, Device characteristics, Effective gate length, Field effect transistor (FETs), Gate-all-around, HIGH-K metal gates, SiGe channels, Vertical nanowires, Si-Ge alloys

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-41547Test

المؤلفون: Xiao, Z. R., Wang, Q., Zhu, H. L., Chen, Z., Zhang, Y. K., Li, J. J., Zhou, N., Gao, J. F., Ai, X. Z., Lu, S. S., Huang, W. X., Xiong, W. J., Kong, Z. Z., Xiang, J. J., Zhang, Y., Zhao, J., Liu, J. B., Lu, Y. H., Bai, G. B., He, X. B., Du, A. Y., Wu, Z. H., Yang, T., Li, J. F., Luo, J., Wang, W. W., Ye, T. C.

المساهمون: Vertical Gate-All-Around (GAA) for Dynamic Random Access Memory (DRAM) and Process Development under Beijing Superstring Academy Memory Technology

المصدر: IEEE Electron Device Letters ; volume 43, issue 8, page 1183-1186 ; ISSN 0741-3106 1558-0563

الإتاحة: https://doi.org/10.1109/led.2022.3187006Test
http://xplorestaging.ieee.org/ielx7/55/9841091/09810318.pdf?arnumber=9810318Test

المؤلفون: Zhang, Yongkui, Ai, Xuezheng, Yin, Xiaogen, Zhu, Huilong, Yang, H., Wang, G. L., Li, J. J., Du, A. Y., Li, C., Huang, W. X., Xie, L., Li, Y. Y., Liu, Y. B., Zhang, Y. B., Jia, K. P., Wu, Z. H., Ma, X. L., Zhang, Q. Z., Mao, S. J., Xu, G. B., Xiang, J. J., Gao, J. F., He, X. B., Lu, Y. H., Bai, G. B., Zhao, J., Li, Y. L., Yang, T., Li, J. F., Yin, H. X., Radamson, H., Luo, J., Zhao, C., Wang, W. W., Ye, T. C.

المساهمون: Academy of Integrated Circuit of the Chinese Academy of Sciences, National Key Research and Development Program of China, Youth Innovation Promotion Association of CAS

المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 6, page 2604-2610 ; ISSN 0018-9383 1557-9646

الإتاحة: https://doi.org/10.1109/ted.2021.3072879Test
http://xplorestaging.ieee.org/ielx7/16/9439211/09417199.pdf?arnumber=9417199Test