دورية أكاديمية
The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density
| العنوان: | The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density |
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| المؤلفون: | Chengyuan Sun, Yunfei Shang, Zuotao Lei, Yujian Wang, Hao Xue, Chunhui Yang, Yingmin Wang |
| المصدر: | Materials, Vol 17, Iss 10, p 2192 (2024) |
| بيانات النشر: | MDPI AG, 2024. |
| سنة النشر: | 2024 |
| المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
| مصطلحات موضوعية: | physical vapor transport, SiC single crystal, BPD density, numerical simulation, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
| الوصف: | The basal plane dislocation (BPD) density is one of the most important defects affecting the application of SiC wafers. In this study, numerical simulations and corresponding experiments were conducted to investigate the influence of cooling processes, seed-bonding methods, and graphite crucible materials on the BPD density in an 8-inch N-type 4H-SiC single crystal grown by the physical vapor transport (PVT) method. The results showed that the BPD density could be effectively reduced by increasing the cooling rate, optimizing the seed-bonding method, and adopting a graphite crucible with a similar coefficient of thermal expansion as the SiC single crystal. The BPD density in the experiments showed that a high cooling rate reduced the BPD density from 4689 cm−2 to 2925 cm−2; optimization of the seed-bonding method decreased the BPD density to 1560 cm−2. The BPD density was further reduced to 704 cm−2 through the adoption of a graphite crucible with a smaller thermal expansion coefficient. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1996-1944 |
| العلاقة: | https://www.mdpi.com/1996-1944/17/10/2192Test; https://doaj.org/toc/1996-1944Test |
| DOI: | 10.3390/ma17102192 |
| الوصول الحر: | https://doaj.org/article/e858d686ab354670850ccd2b0a14c861Test |
| رقم الانضمام: | edsdoj.858d686ab354670850ccd2b0a14c861 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19961944 |
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| DOI: | 10.3390/ma17102192 |