دورية أكاديمية
The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation
| العنوان: | The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation |
|---|---|
| المؤلفون: | Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, Abdullah, Wasige, Edward, Kalna, Karol |
| بيانات النشر: | Elsevier |
| سنة النشر: | 2020 |
| المجموعة: | University of Glasgow: Enlighten - Publications |
| الوصف: | The thickness increase of gallium nitride (GaN) cap layer from 2 nm to 35 nm to achieve an enhancement mode GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) with a threshold voltage (Vth) of +0.5 V is studied using TCAD simulations. The simulations are calibrated to measured I-V characteristics of the 1 μm gate length GaN MIS-HEMT with the 2 nm thick GaN cap. A good agreement at low and high drain voltages (VDS=1 V and 5 V) between simulations and measurements is achieved by using a quantum-corrected drift-diffusion transport model. The enhancement mode GaN MIS-HEMT with a GaN cap thickness of 35 nm achieves Vth = + 0.5 V thanks to positive interface traps occurring between the SiN passivation layer and the GaN cap as reported experimentally. The simulations indicate that a parasitic channel is created at the interface between the SiN layer and the 35 nm GaN cap. Our study also shows an increase in the breakdown voltage from 100 V to 870 V when a thickness of the GaN cap layer increases from 15 nm to 35 nm. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | text |
| اللغة: | English |
| العلاقة: | http://eprints.gla.ac.uk/228522/2/228522.pdfTest; Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, A. , Wasige, E. and Kalna, K. (2020) The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability , 115, 113965. (doi:10.1016/j.microrel.2020.113965 ) |
| الإتاحة: | https://doi.org/10.1016/j.microrel.2020.113965Test http://eprints.gla.ac.uk/228522Test/ http://eprints.gla.ac.uk/228522/2/228522.pdfTest |
| حقوق: | cc_by_nc_nd_4 |
| رقم الانضمام: | edsbas.E773801B |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |