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1دورية أكاديمية
المؤلفون: Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
مصطلحات موضوعية: AlGaN/GaN HEMTs on SiC, Cu metallization, minimum noise figure, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Muhammad Izzuddin Abd Samad, Syazwani Izrah Badrudin, Darven Raj Ponnuthurai, Marwan Mansor, Nafarizal Nayan, Ahmad Shuhaimi, Rhonira Latif
مصطلحات موضوعية: Acoustic Wave Biosensors and Thin Film Resonators, Biomedical Engineering, FOS Medical engineering, Engineering, Physical Sciences, First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, Ceramic Materials and Processing, Ceramics and Composites, Materials Science, Aluminum Nitride Thin Films, AlGaN/GaN HEMTs, Materials science, Molybdenum, Nitride, Sputtering, Aluminium, Titanium, Layer electronics, Ceramic, Argon, Nitrogen, Metallurgy, Thin film, Nitrogen gas, Titanium nitride, Aluminium nitride, Composite material
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3دورية أكاديمية
المؤلفون: John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, S. Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
مصطلحات موضوعية: First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, Physical Sciences, Power Electronics Technology, Electrical and Electronic Engineering, FOS Electrical engineering, electronic engineering, information engineering, Engineering, Atomic Layer Deposition Technology, AlGaN/GaN HEMTs, High-Temperature Electronics, High-k Dielectrics, GaN Power Devices, Ohmic contact, Materials science, Heterojunction, Wide-bandgap semiconductor, Optoelectronics, Gallium nitride, Nanotechnology, FOS Nanotechnology, Layer electronics
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4دورية أكاديمية
المؤلفون: Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, S. Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, André Bélanger, Patrick K. Darmawi-Iskandar, Zlatan Akšamija, R. J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
مصطلحات موضوعية: First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, Physical Sciences, Power Electronics Technology, Electrical and Electronic Engineering, FOS Electrical engineering, electronic engineering, information engineering, Engineering, Zinc Oxide Nanostructures, Materials Chemistry, Materials Science, GaN Power Devices, High-Temperature Electronics, AlGaN/GaN HEMTs, Transparent Conductors, GaN, Venus, Materials science, Optoelectronics, Transistor, Wide-bandgap semiconductor, Mode computer interface, Nanotechnology, FOS Nanotechnology, Engineering physics, Computer science, Physics, Astrobiology, Electrical engineering
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5دورية أكاديمية
المؤلفون: Md. Najmus Sakib, Tanvir Ahmed, Md Adam Shafiulla, Farzana Afroj, Afiya Akter Piya, Siraj Ud Daula Shamim
مصطلحات موضوعية: Synthesis and Properties of Boron-based Materials, Materials Chemistry, Materials Science, Physical Sciences, Nonlinear Optical Materials and Properties, Electronic, Optical and Magnetic Materials, First-Principles Calculations for III-Nitride Semiconductors, Condensed Matter Physics, FOS Physical sciences, Physics and Astronomy, AlGaN/GaN HEMTs, Adsorption, Materials science, Drug, Wide-bandgap semiconductor, Computational chemistry, Chemical engineering, FOS Chemical engineering, Nanotechnology, FOS Nanotechnology, Chemistry, Physical chemistry, Optoelectronics, Pharmacology, Medicine, Engineering
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6دورية أكاديمية
المؤلفون: Yi-Ho Chen, Daisuke Ohori, Muhammad Aslam, Yao-Jen Lee, Yiming Li, Seiji Samukawa
المصدر: IEEE Open Journal of Nanotechnology, Vol 4, Pp 150-155 (2023)
مصطلحات موضوعية: AlGaN/GaN HEMTs, recess gate, neutral beam etching, post-metallization annealing, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Xiaoyi Liu, Jian Qin, Jingxiong Chen, Jianyu Chen, Hong Wang
المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 130-134 (2023)
مصطلحات موضوعية: AlGaN/GaN HEMTs, breakdown voltage, stacked passivation layer, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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8دورية أكاديمية
المؤلفون: Yunqian Song, Chuan Chen, Qidong Wang, Jianyu Feng, Rong Fu, Xiaobin Zhang, Liqiang Cao
المصدر: Micromachines, Vol 15, Iss 1, p 33 (2023)
مصطلحات موضوعية: AlGaN/GaN HEMTs, remote cooling, near-chip cooling, chip-embedded cooling, hotspot, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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9دورية أكاديمية
المؤلفون: Surajit Chakraborty, Tae-Woo Kim
المصدر: Micromachines, Vol 14, Iss 10, p 1833 (2023)
مصطلحات موضوعية: AlGaN/GaN HEMTs, electric field, stress voltage, mean time to failure, channel temperature, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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10دورية أكاديمية
المؤلفون: Millesimo, M., Borga, M., Valentini, L., Bakeroot, Benoit, Posthuma, N., Vohra, A., Decoutere, S., Fiegna, C., Tallarico, A. N.
المصدر: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646
مصطلحات موضوعية: Technology and Engineering, AlGaN/GaN HEMT, back-gating current deep-level transient spectroscopy, (I-DLTS), buffer trapping, R(ON )drift, stretched exponential, ALGAN/GAN HEMTS, NONEXPONENTIAL TRANSIENTS, CURRENT COLLAPSE, CARBON, IMPACT, MECHANISMS, BREAKDOWN, VOLTAGE, STATES, MODEL
وصف الملف: application/pdf
العلاقة: https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6Test; http://hdl.handle.net/1854/LU-01HTHPRNCYY2FVJ5SCQEP9Q7A6Test; http://doi.org/10.1109/TED.2023.3304272Test; https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6/file/01HTHPS69NH671AR6Q6S5TYFQVTest
الإتاحة: https://doi.org/10.1109/TED.2023.3304272Test
https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6Test
http://hdl.handle.net/1854/LU-01HTHPRNCYY2FVJ5SCQEP9Q7A6Test
https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6/file/01HTHPS69NH671AR6Q6S5TYFQVTest