المؤلفون: Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn

مصطلحات موضوعية: Gallium Nitride, Indium Gallium Nitride, Cathodeluminescence, X-ray Diffraction, Metal-organic Chemical Vapor Deposition, 光电子学, x-ray crystallography, metal organic chemical vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition)

العلاقة: THIN SOLID FILMS; Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Yang H (Yang H.).Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.THIN SOLID FILMS,2010,518(17):5028-5031; http://ir.semi.ac.cn/handle/172111/13476Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/13476Test

المؤلفون: Li MC, Qiu YX, Liu GJ, Wang YT, Zhang BS, Zhao LC, Li MC Harbin Inst Technol Sch Mat Sci & Engn POB 405 Harbin 150001 Peoples R China. E-mail Address: mcli@hit.edu.cn

مصطلحات موضوعية: X-ray-diffraction, Molecular-beam-epitaxy, Films, Misfit, 半导体物理, x-ray crystallography, atomic layer deposition, photography--films, finite volume method, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, atomic layer epitaxial growth, ale, mle growth

العلاقة: JOURNAL OF APPLIED PHYSICS; Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC .Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates ,JOURNAL OF APPLIED PHYSICS,2009 ,105(9):Art. No. 094903; http://ir.semi.ac.cn/handle/172111/7159Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/7159Test

المؤلفون: Wei, XC, Zhao, YW, Dong, ZY, Li, JM, Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xcwei@semi.ac.cn

مصطلحات موضوعية: Defects, X-ray Diffraction, Growth From Vapor, Oxides, Semiconducting Ii-vi Materials, 半导体材料, x-ray crystallography, anomalies, defauts, fehler, flaws, imperfections, faults (defects), x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: JOURNAL OF CRYSTAL GROWTH; Wei, XC; Zhao, YW; Dong, ZY; Li, JM .Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method ,JOURNAL OF CRYSTAL GROWTH,2008 ,310(3): 639-645; http://ir.semi.ac.cn/handle/172111/6880Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6880Test

المؤلفون: Zhang, PF, Wei, HY, Cong, GW, Hu, WG, Fan, HB, Wu, JJ, Zhu, QS, Liu, XL, Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, Metal-organic Chemical Vapor Deposition, Zinc Oxide, Structural Properties, 半导体材料, x-ray crystallography, metal organic chemical vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition)

العلاقة: THIN SOLID FILMS; Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL .Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition ,THIN SOLID FILMS,2008 ,516(6): 925-928; http://ir.semi.ac.cn/handle/172111/6868Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6868Test

المؤلفون: Su FH, Chen W, Ding, K, Li GH, Chen, W, Univ Texas Arlington, Dept Phys, POB 19059, Arlington, TX 76019 USA. 电子邮箱地址: weichen@uta.edu, ghli@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 半导体化学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: JOURNAL OF PHYSICAL CHEMISTRY A; Su, FH; Chen, W; Ding, K; Li, GH .New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides ,JOURNAL OF PHYSICAL CHEMISTRY A,2008 ,112(21): 4772-4777; http://ir.semi.ac.cn/handle/172111/6670Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6670Test

المؤلفون: Zhao, DG, Jiang, DS, Zhu, JJ, Liu, ZS, Zhang, SM, Wang, YT, Yang, H, Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, Epitaxial Gan, Dependence, Photoluminescence, Growth, Films, 半导体物理, x-ray crystallography, dependency, development, photography--films, finite volume method, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: CHINESE PHYSICS LETTERS; Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Wang, YT; Yang, H .Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells ,CHINESE PHYSICS LETTERS,2008 ,25(11): 4143-4146; http://ir.semi.ac.cn/handle/172111/6372Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/6372Test

المؤلفون: Wang H, Huang Y, Sun Q, Chen J, Zhu JJ, Wang LL, Wang YT, Yang H, Wu MF, Qu YH, Jiang DS, Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: MATERIALS LETTERS; Wang, H (Wang, H.); Huang, Y (Huang, Y.); Sun, Q (Sun, Q.); Chen, J (Chen, J.); Zhu, JJ (Zhu, J. J.); Wang, LL (Wang, L. L.); Wang, YT (Wang, Y. T.); Yang, H (Yang, H.); Wu, MF (Wu, M. F.); Qu, YH (Qu, Y. H.); Jiang, DS (Jiang, D. S.) .Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition ,MATERIALS LETTERS,JAN 2007 ,61 (2):516-519; http://ir.semi.ac.cn/handle/172111/9708Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/9708Test

المؤلفون: Shi WH (Shi Wenhua), Zhao L (Zhao Lei), Luo LP (Luo Liping), Wang QM (Wang Qiming), Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY; Shi, WH (Shi, Wenhua); Zhao, L (Zhao, Lei); Luo, LP (Luo, Liping); Wang, QM (Wang, Qiming) .Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction ,JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,MAY 2007,23 (3):301-303; http://ir.semi.ac.cn/handle/172111/9394Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/9394Test

المؤلفون: Chen J, Wang JF, Wang H, Zhu JJ, Zhang SM, Zhao DG, Jiang DS, Yang H, Jahn U, Ploog KH, Chen, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: jchen@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, 光电子学, x-ray crystallography, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Chen J (Chen J.); Wang JF (Wang J. F.); Wang H (Wang H.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Jahn U (Jahn U.); Ploog KH (Ploog K. H.) .Measurement of threading dislocation densities in GaN by wet chemical etching ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(9):1229-1235; http://ir.semi.ac.cn/handle/172111/10436Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10436Test

المؤلفون: Wang H (Wang H.), Huang Y (Huang Y.), Sun Q (Sun Q.), Chen J (Chen J.), Wang LL (Wang L. L.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Zhang SM (Zhang S. M.), Jiang DS (Jiang D. S.), Wang YT (Wang Y. T.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn

مصطلحات موضوعية: X-ray-diffraction, Electron-transport, Epitaxial Gan, Band-gap, Dislocations, Sapphire, Aln, 光电子学, x-ray crystallography, charge exchange, energy bands, aluminum oxide, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers

العلاقة: APPLIED PHYSICS LETTERS; Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) .Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition ,APPLIED PHYSICS LETTERS,2006 ,89(9):Art.No.092114; http://ir.semi.ac.cn/handle/172111/10432Test

الإتاحة: http://ir.semi.ac.cn/handle/172111/10432Test