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2رسالة جامعية
المؤلفون: 黃鋒文, Huang, Feng-Wen
المساهمون: 光電科學與工程學系, 許進恭, Sheu, Jinn-Kong
مصطلحات موضوعية: 有機金屬氣相磊晶法, 氮化鎵摻雜錳, 光子能量向上轉換, 中間能帶, 太陽能電池, 錳殘留效應, 氮化銦鎵摻雜錳, Mn-doped GaN, memory effect, up-converter, intermediate band solar cell, spintronics, MOVPE
وصف الملف: 142 bytes; text/html
العلاقة: http://ir.lib.ncku.edu.tw/handle/987654321/213867Test; http://ir.lib.ncku.edu.tw/bitstream/987654321/213867/1/index.htmlTest
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3رسالة جامعية
المؤلفون: 彭立琪, Peng, Li-Chi
المساهمون: 光電科學與工程學系, 賴韋志, Lai, Wei-Chih
مصطلحات موضوعية: 有機金屬氣相磊晶法, 氮化鎵, 氮化鋁鎵, 發光二極體, 蕭特基光檢測器, MOVPE, GaN, AlGaN, light emitting diodes, Schottky-type photodetectors
وصف الملف: 142 bytes; text/html
العلاقة: http://ir.lib.ncku.edu.tw/handle/987654321/213822Test; http://ir.lib.ncku.edu.tw/bitstream/987654321/213822/1/index.htmlTest
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4رسالة جامعية
المؤلفون: 彭立琪, Peng, Li-Chi
المساهمون: 光電科學與工程學系, 賴韋志, Lai, Wei-Chih
مصطلحات موضوعية: 有機金屬氣相磊晶法, 氮化鎵, 氮化鋁鎵, 發光二極體, 蕭特基光檢測器, MOVPE, GaN, AlGaN, light emitting diodes, Schottky-type photodetectors
العلاقة: http://ir.lib.ncku.edu.tw/handle/987654321/123338Test; http://ir.lib.ncku.edu.tw/bitstream/987654321/123338/-1/index.htmlTest
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5رسالة جامعية
المؤلفون: 黃鋒文, Huang, Feng-Wen
المساهمون: 光電科學與工程學系, 許進恭, Sheu, Jinn-Kong
مصطلحات موضوعية: 有機金屬氣相磊晶法, 氮化鎵摻雜錳, 光子能量向上轉換, 中間能帶, 太陽能電池, 錳殘留效應, 氮化銦鎵摻雜錳, Mn-doped GaN, memory effect, up-converter, intermediate band solar cell, spintronics, MOVPE
العلاقة: http://ir.lib.ncku.edu.tw/handle/987654321/123307Test; http://ir.lib.ncku.edu.tw/bitstream/987654321/123307/-1/index.htmlTest
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6رسالة جامعية
المؤلفون: 黃煇閔, Huang, Huei-Min, 盧廷昌, Lu, Tien-Chang
المساهمون: 光電工程學系
مصطلحات موضوعية: 氮化鎵, 發光二極體, 有機金屬化學氣相磊晶法, 內部量子效率, 超晶格, 非極性, 同質磊晶, 石墨烯, GaN, Light emitting diode, metal-organic chemical vapor deposition, Internal Quantum Efficiency, Superlattice, Non-polar, Homoepitaxy, Graphene
العلاقة: http://140.113.39.130/cdrfb3/record/nctu/#GT079624827Test; http://hdl.handle.net/11536/42584Test
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7رسالة جامعية
المؤلفون: 楊定儒, Yang, Din-Ru, 李威儀, Lee, Wei-I
المساهمون: 電子物理系所
العلاقة: http://140.113.39.130/cdrfb3/record/nctu/#GT079621560Test; http://hdl.handle.net/11536/42475Test
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8رسالة جامعية
المؤلفون: 沈孟駿, Shen, Meng-Chun
المساهمون: 武東星, Dong-Sing Wu, 中興大學, 林明澤, Ming-Tzer Lin, 王昭鑫, Zhao-Xin Wang
مصطلحات موضوعية: GaP window layer, 磷化鎵窗口層, AlGaInP, LED, MOCVD, TMGa, 磷化鋁銦鎵, 發光二極體, 有機金屬化學氣相磊晶法, 三甲基鎵
العلاقة: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2807200610291000Test; U0005-2807200610291000; http://hdl.handle.net/11455/4117Test
الإتاحة: http://hdl.handle.net/11455/4117Test
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9رسالة جامعية
المؤلفون: 吳佩倫, Pei-Lun Wu, 李威儀, Wei-I Lee
المساهمون: 電子物理系所
مصطلحات موضوعية: 除潤現象, 鎳金屬薄膜, 氮化鎵, 氫化物氣相磊晶法, 磊晶側向成長法, 多孔二氧化矽, dewetting, Ni film, GaN, HVPE, ELOG, porous SiO2
العلاقة: http://140.113.39.130/cdrfb3/record/nctu/#GT009521510Test; http://hdl.handle.net/11536/38817Test
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10
المؤلفون: 黃坤富, Fun-Fu Huang
المساهمون: 吳孟奇, Meng-Chyi Wu
الوقت: 47
وصف الملف: 155 bytes; text/html
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Maximov, P. K. Kop’ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gosele, and J. Heydenereich, “ Low threshold, large T0 injection laser emission from (InGa)As quantum dots,” Electron. Lett., vol 30, p.p 1416-1417, 1994. [8] R. Mirin, A. Gossard, and J. Bowers, “Room temperature lasing from InGaAs quantum dots,” Electron. Lett., vol. 32, pp. 1732–1734, 1996. [9] H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama,M. Sugawara, N. Yokoyama, and H. Ishikawa, “Self-formed InGaAs quantum dot lasers with multistacked dot layer,” Jpn. J. Appl. Phys., vol. 35, pp. L903–L905, 1996. [10] H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, “Roomtemperature lasing operation of a quantum-dot vertical-cavity surfaceemitting laser,” Appl. Phys. Lett., vol. 69, pp. 3140–3142, 1996. [11] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips, “Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers,” Electron. Lett., vol. 32, no. 15, pp. 1374–1375, 1996. [12] D. L. 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Musikhin,” 1.3μm luminescence and gain form defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition”, Semicond. Sci. Technol. vol.15, pp. 604-607, 2000. [72] I. N. Kaiander, R. L. Sellin, T. Kettler, N. N. Ledentsov, D. Bimberg, N.D. Zakhorov, and P. Werner,” 1.24 µm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine”, Appl. Phys. Lett. vol. 84, pp. 2992-2994, 2004.; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/34479Test
