Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
العنوان: | Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates |
---|---|
المؤلفون: | Marco Salvalaglio, Francesco Montalenti, João Valente, Saleh Firoozabadi, Axel Voigt, M Albani, Roberto Bergamaschini, Giovanni Isella, Andreas Beyer, Leo Miglio, Kerstin Volz, Andrea Ballabio, Douglas J. Paul, Andrea Barzaghi |
المساهمون: | Barzaghi, A, Firoozabadi, S, Salvalaglio, M, Bergamaschini, R, Ballabio, A, Beyer, A, Albani, M, Valente, J, Voigt, A, Paul, D, Miglio, L, Montalenti, F, Volz, K, Isella, G |
المصدر: | Crystal Growth & Design |
بيانات النشر: | American Chemical Society, 2020. |
سنة النشر: | 2020 |
مصطلحات موضوعية: | Surface diffusion, Materials science, 010405 organic chemistry, business.industry, Nucleation, General Chemistry, Substrate (electronics), 010402 general chemistry, Condensed Matter Physics, Microstructure, Epitaxy, 01 natural sciences, Article, 0104 chemical sciences, Crystal, nanovoids, phase-field, pillar, Semiconductor, Transmission electron microscopy, Optoelectronics, General Materials Science, business |
الوصف: | We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures. Ordered 3D arrays of nanovoids can be formed during the epitaxial growth of Si microcrystals on patterned substrates. Phase-field simulations provide a clear link between nanovoid formation and the ratio between diffusion coefficient and deposition rate. With the appropriate combination of pattern geometry, deposition rate and deposition temperature control over nanovoids formation could be achieved also with other semiconductors. |
وصف الملف: | application/pdf |
اللغة: | English |
تدمد: | 1528-7505 1528-7483 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d16e2750240c4eab973a72eca181fceTest http://europepmc.org/articles/PMC8016367Test |
حقوق: | OPEN |
رقم الانضمام: | edsair.doi.dedup.....2d16e2750240c4eab973a72eca181fce |
قاعدة البيانات: | OpenAIRE |
تدمد: | 15287505 15287483 |
---|