التفاصيل البيبلوغرافية
| العنوان: |
Optical investigation of InAs quantum dashes grown on InP(001) vicinal substrate. |
| المؤلفون: |
Besahraoui, F.1 fatiha.besahraoui@yahoo.fr, Bouslama, M.1, Saidi, F.2, Bouzaiene, L.2, Hadj Alouane, M.H.2, Maaref, H.2, Chauvin, N.3, Gendry, M.4, Lounis, Z.1, Ghaffour, M.1 |
| المصدر: |
Superlattices & Microstructures. Jan2014, Vol. 65, p264-270. 7p. |
| مصطلحات موضوعية: |
*OPTOELECTRONIC devices, *PHOTOLUMINESCENCE, *THERMAL stability, *PHOTODETECTORS, *SOLAR cells, *OPTICAL properties of indium phosphide, *OPTICAL properties of indium arsenide, *CRYSTAL growth, *QUANTUM dash lasers |
| مستخلص: |
Highlights: [•] We give an original results about the optical properties of InAs/InP(001) quantum dashes used in optoelectronic devices. [•] The optoelectronic properties of InAs/InP(001) QDas are investigated with photoluminescence spectroscopy. [•] The lateral coupling behavior observed for the nominal sample is completely eliminated in the case of the vicinal sample. [•] The vicinal sample has an excellent thermal stability and a broad emission range. [•] The optical properties of the vicinal sample give the opportunity to use it in solar cells and in infrared photodetectors. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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