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1دورية أكاديمية
المؤلفون: A F Hebard, R P Rairigh, J G Kelly, S J Pearton, C R Abernathy, S N G Chu, R G Wilson
المساهمون: The Pennsylvania State University CiteSeerX Archives
الوصف: ion-implanted dilute magnetic semiconductors
وصف الملف: application/pdf
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2دورية أكاديمية
المؤلفون: S J Pearton, C R Abernathy, G T Thaler, R M Frazier, D P Norton, F Ren, Y D Park, J M Zavada, I A Buyanova, W M Chen, A F Hebard
المساهمون: The Pennsylvania State University CiteSeerX Archives
الوصف: Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low-power, high speed memory, logic and photonic devices based on spintronics. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. We discuss the current state-of-the-art in producing room temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications. (Some figures in this article are in colour only in the electronic version) Contents
وصف الملف: application/pdf
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3دورية أكاديمية
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: Magnetic ions, Ferromagnetism, Ni
الوصف: High concentrations (/1021 cm3) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either GaN or SiC. The direct implantation process appears useful for studying ion/substrate combinations for potential spintronic applications. # 2002 Elsevier Science B.V. All rights reserved.
وصف الملف: application/pdf
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4دورية أكاديمية
المؤلفون: C. A. Bollinger, D. Grube, S. A. Lytle, E. P. Martin, J A. Shimer, H. R. Siddiqui,
In "proc Th Int, J. J. Hsieh, D. E. Ibbotson, J A. Mucha, N. Selamoglu, S. J. Pearton, U. K. Chakrabarti, E. Lane, A. P. Perley, C. R. Abernathy, W. S. Hobson, K. S. Jones المساهمون: The Pennsylvania State University CiteSeerX Archives
الوصف: AT&T Bell Laboratories assisted in meeting the publica-
وصف الملف: application/pdf
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المؤلفون: C. R. Abernathy, Stephen J. Pearton, Fan Ren, Brent P. Gila, Erica A. Douglas
المصدر: ECS Transactions. 50:261-272
مصطلحات موضوعية: Materials science, business.industry, Schottky barrier, Transistor, Induced high electron mobility transistor, Cathodoluminescence, High-electron-mobility transistor, Electroluminescence, law.invention, Stress (mechanics), law, Optoelectronics, Degradation (geology), business
الوصف: Sub-micron AlGaN/GaN high electron mobility transistors were RF stressed at various drain bias conditions at 10 GHz under 3 dB and 3.7 dB compression. Rapid degradation was observed above a drain bias of 20 V, with significant degradation of the Schottky contact. Additionally, electroluminescence and cathodoluminescence was performed on stressed devices. Localization of 2.2 eV defect emission was observed on a device suffering from infant mortality.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::7b50aa08545f3b5ce726fd481fbed3ceTest
https://doi.org/10.1149/05006.0261ecstTest -
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المؤلفون: Jihyun Kim, Fan Ren, Brent P. Gila, Dong June Ahn, C. R. Abernathy, C. W. Lee, Gil Sun Lee, Hak Jong Choi, Steve Pearton
المصدر: physica status solidi (a). 204:3556-3561
مصطلحات موضوعية: Analytical chemistry, Surfaces and Interfaces, Condensed Matter Physics, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Contact angle, Ammonia, chemistry.chemical_compound, Template, chemistry, Chemisorption, Materials Chemistry, Sapphire, Electrical and Electronic Engineering, Selectivity, Molecular beam epitaxy
الوصف: PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc2O3/GaN/Sapphire structures for use as selective NH3 gas sensors. The Sc2O3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga2O3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::02d4c2d84a115e502f15f1cbd75e8b11Test
https://doi.org/10.1002/pssa.200723066Test -
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المؤلفون: Fan Ren, Lars F. Voss, Rohit Khanna, Brent P. Gila, C. R. Abernathy, Stephen J. Pearton, Ivan I. Kravchenko, L. Stafford
المصدر: Journal of Electronic Materials. 36:1662-1668
مصطلحات موضوعية: Auger electron spectroscopy, Materials science, Annealing (metallurgy), Aluminium nitride, Metallurgy, Contact resistance, Zirconium nitride, Nitride, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Tantalum nitride, chemistry, Materials Chemistry, Electrical and Electronic Engineering, Composite material, Ohmic contact
الوصف: The use of TaN, TiN, and ZrN diffusion barriers for Ti/Al-based contacts on n-GaN (n ∼ 3 × 1017 cm−3) is reported. The annealing temperature (600–1,000°C) dependence of the Ohmic contact characteristics using a Ti/Al/X/Ti/Au metallization scheme, where X is TaN, TiN, or ZrN, deposited by sputtering was investigated by contact resistance measurements and Auger electron spectroscopy (AES). The as-deposited contacts were rectifying and transitioned to Ohmic behavior for annealing at ≥600°C. A minimum specific contact resistivity of ∼6 × 10−5 Ω-cm−2 was obtained after annealing over a broad range of temperatures (600–900°C for 60 s), comparable to that achieved using a conventional Ti/Al/Pt/Au scheme on the same samples. The contact morphology became considerably rougher at the high end of the annealing range. The long-term reliability of the contacts at 350°C was examined; each contact structure showed an increase in contact resistance by a factor of three to four over 24 days at 350°C in air. AES profiling showed that the aging had little effect on the contact structure of the nitride stacks.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::2983db22d449bca1f235893097084347Test
https://doi.org/10.1007/s11664-007-0277-3Test -
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المؤلفون: C. R. Abernathy, Fan Ren, Stephen J. Pearton
المصدر: Defect and Diffusion Forum. :1-42
مصطلحات موضوعية: Radiation, Silicon, Passivation, Chemistry, business.industry, Inorganic chemistry, chemistry.chemical_element, Trapping, Condensed Matter Physics, Charge-carrier density, Semiconductor, Impurity diffusion, Chemical physics, Impurity, General Materials Science, Diffusion (business), business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::1ca9f380bde7f8aef7f4c63d7192aeb5Test
https://doi.org/10.4028/www.scientific.net/ddf.111-112.1Test -
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المؤلفون: Stephen J. Pearton, Irina Buyanova, Weimin Chen, C. R. Abernathy, Yasuo Oka
المصدر: Solid State Phenomena. :839-842
مصطلحات موضوعية: Spin pumping, Materials science, Spin polarization, Spintronics, Condensed matter physics, Spin engineering, Magnetic semiconductor, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Spinplasmonics, Condensed Matter::Strongly Correlated Electrons, General Materials Science, Quantum spin liquid, Spin-½
الوصف: We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b85f076bb9ae4ddeebd0c0855b39d902Test
https://doi.org/10.4028/www.scientific.net/ssp.124-126.839Test -
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المؤلفون: R. Dwivedi, S. J. Pearton, M. Hlad, C. R. Abernathy, Richard Wilkins, A. P. Gerger, K. K. Allums, T. N. Fogarty, Brent P. Gila, Fan Ren
المصدر: Journal of Electronic Materials. 36:519-523
مصطلحات موضوعية: Materials science, business.industry, Annealing (metallurgy), Dielectric, Condensed Matter Physics, Fluence, Electronic, Optical and Magnetic Materials, Semiconductor, Materials Chemistry, Optoelectronics, Breakdown voltage, Irradiation, Electrical and Electronic Engineering, business, Forming gas, Diode
الوصف: Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 × 109 cm−2, corresponding to 10 years in low-earth orbit. The proton damage causes a decrease in forward breakdown voltage and a flat-band voltage shift in the capacitance-voltage characteristics, indicating a change in fixed oxide charge and damage to the dielectric. The interface state densities after irradiation increased from 5.9 × 1011 cm−2 to 1.03 × 1012 cm−2 in Sc2O3/GaN diodes and from 2.33 × 1011 to 5.3 × 1011 cm−2 in Sc2O3/MgO/GaN diodes. Postannealing at 400°C in forming gas recovered most of the original characteristics but did increase the interfacial roughness.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::657a2e455ecdc8bd0c70972f6deb80e5Test
https://doi.org/10.1007/s11664-006-0035-yTest
