مؤتمر
Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs
| العنوان: | Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs |
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| المؤلفون: | Sasso, G., C., Maneux, Boeck, J., d'Alessandro, V., Aufinger, K., Rinaldi, N., Zimmer, T. |
| المساهمون: | Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), NANOELECTRONIQUE/MODEL, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), European Project |
| المصدر: | Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE ; https://hal.science/hal-01134190Test ; Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE, Oct 2014, La Jolla, United States. ⟨10.1109/CSICS.2014.6978552⟩ |
| بيانات النشر: | HAL CCSD |
| سنة النشر: | 2014 |
| المجموعة: | Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe) |
| مصطلحات موضوعية: | [SPI]Engineering Sciences [physics] |
| جغرافية الموضوع: | La Jolla, United States |
| الوصف: | International audience |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| العلاقة: | hal-01134190; https://hal.science/hal-01134190Test |
| DOI: | 10.1109/CSICS.2014.6978552 |
| الإتاحة: | https://doi.org/10.1109/CSICS.2014.6978552Test https://hal.science/hal-01134190Test |
| رقم الانضمام: | edsbas.1CEC29BD |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/CSICS.2014.6978552 |
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