Method of fabricating modulator integrated semiconductor laser device

التفاصيل البيبلوغرافية
العنوان: Method of fabricating modulator integrated semiconductor laser device
المؤلفون: TADASHI, KIMURA, YUTAKA, MIHASHI, KATUHIKO, GOTOH, TAKUSHI, ITAGAKI
المساهمون: MITSUBISHI DENKI KABUSHIKI KAISHA
سنة النشر: 1997
المجموعة: Xi'an Institute of Optics and Precision Mechanics: OPT OpenIR (Chinese Academy of Sciences, CAS) / 中国科学院西安光学精密机械研究所机构知识库
مصطلحات موضوعية: H01L | H01S5/026 | H01S | H01L27/15 | H01S5/10 | H01S5/00 | H01S5/20 | H01L33/00 | H01S3/025 | G02F1/015
جغرافية الموضوع: 英国
الوصف: In a method of fabricating a modulator integrated semiconductor laser device, a semiconductor layer (4) having first and second regions (A, B) of different crystal compositions is produced on each chip region (101) of a semiconductor wafer (100) by a selective crystal growth using, as a mask, a dielectric film (2a, 2b) having a prescribed pattern (101a). Thereafter, a semiconductor laser and a light modulator that modulates the intensity of laser light emitted from the semiconductor layer are produced in the first semiconductor region and the second semiconductor region, respectively. In this method, the shape of the dielectric mask pattern (2a, 2b) and the shape of the opening (1a) of the mask pattern on each chip region is symmetrical with those on adjacent chip region in the optical waveguide direction of the semiconductor laser.; Therefore, the semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with the semiconductor region of the same crystal composition on adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are made uniform.
نوع الوثيقة: other/unknown material
اللغة: unknown
العلاقة: http://ir.opt.ac.cn/handle/181661/44691Test
الإتاحة: http://ir.opt.ac.cn/handle/181661/44691Test
حقوق: cn.org.cspace.api.content.CopyrightPolicy@47ab81a2
رقم الانضمام: edsbas.84174806
قاعدة البيانات: BASE