التفاصيل البيبلوغرافية
| العنوان: |
Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure. |
| المؤلفون: |
Maji, Nilay1, Kar, Uddipta1, Nath, T. K.1 tapnath@gmail.com |
| المصدر: |
Applied Physics A: Materials Science & Processing. Feb2018, Vol. 124 Issue 2, p0-0. 1p. 2 Charts, 10 Graphs. |
| مصطلحات موضوعية: |
*SPIN valves, *TUNNEL diodes, *MAGNETORESISTANCE, *LOW temperatures, *HETEROSTRUCTURES, *HEUSLER alloys, *THIN films |
| مستخلص: |
The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage (I-V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current (I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I-V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off (Ioff)/on (Ion) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K). [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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