دورية أكاديمية

Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications.

التفاصيل البيبلوغرافية
العنوان: Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications.
المؤلفون: Filipovic, Lado, Selberherr, Siegfried, Mutinati, Giorgio C., Brunet, Elise, Steinhauer, Stephan, Kock, Anton, Teva, Jordi, Kraft, Jochen, Siegert, Jorg, Schrank, Franz, Gspan, Christian, Grogger, Werner
المصدر: IEEE Transactions on Semiconductor Manufacturing; May2014, Vol. 27 Issue 2, p269-277, 9p
مصطلحات موضوعية: STANNIC oxide, CRYSTAL growth, PYROLYSIS, GAS detectors, MINIATURE electronic equipment, ELECTRONIC equipment, COMPLEMENTARY metal oxide semiconductors
مستخلص: In order for the gas sensor devices to enjoy the miniaturization trend that has consumed much of the electronic device industry, major research in the field is undertaken. The bulky sensor devices of previous generations can not easily be incorporated into a CMOS processing sequence, because of their bulky nature and potential higher cost of production. More recently, materials such as zinc oxide and tin dioxide have shown powerful gas sensing capabilities. Among many potential deposition methods, spray pyrolysis has become a popular approach because of its ease of use and cost effectiveness. A model for spray pyrolysis deposition is developed and implemented within the level set framework. The implementation allows for a smooth integration of multiple processing steps for the manufacture of smart gas sensor devices. From the observations, it was noted that spray pyrolysis deposition, when performed with a gas pressure nozzle, results in good step coverage, analogous to a CVD process. This is mainly due to the atomizing nozzle being placed at a reasonable distance away from the wafer surface and reducing the droplets volume and mass in order to ensure they fully evaporate prior to contact with the substrate surface. A topography simulator for this deposition methodology is presented. [ABSTRACT FROM PUBLISHER]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:08946507
DOI:10.1109/TSM.2014.2298883