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1دورية أكاديمية
المؤلفون: Tu, Hong-Yi, Chang, Ting-Chang, Tsao, Yu-Ching, Tai, Mao-Chou, Zheng, Yu-Zhe, Tu, Yu-Fa, Kuo, Chuan-Wei, Wu, Chia-Chuan, Tsai, Yu-Lin, Tsai, Tsung-Ming, Lin, Chih-Chih, Chien, Ya-Ting
المصدر: IEEE Electron Device Letters; May2022, Vol. 43 Issue 5, p721-724, 4p
مصطلحات موضوعية: ELECTRON impact ionization, TRANSISTORS, HOT carriers, THIN film transistors, ELECTRON traps, THRESHOLD voltage
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2دورية أكاديمية
المؤلفون: Tsai, Yu-Lin, Chang, Ting-Chang, Tsao, Yu-Ching, Tai, Mao-Chou, Tu, Hong-Yi, Chien, Ya-Ting, Jin, Fu-Yuan, Zheng, Hao-Xuan, Lin, Yu-Shan, Ciou, Fong-Min, Lin, Yun-Hsuan, Wu, Pei-Yu, Huang, Jen-Wei
المصدر: IEEE Transactions on Device & Materials Reliability; Sep2021, Vol. 21 Issue 3, p320-323, 4p
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3دورية أكاديمية
المؤلفون: Kuo, Chuan-Wei, Chang, Ting-Chang, Chen, Hong-Chih, Tsao, Yu-Ching, Chen, Jian-Jie, Zhou, Kuan-Ju, Wu, Wen-Chi, Li, Hsin-Chieh, Lin, Chih-Chih, Zhang, Yong-Ci, Tsai, Tsung-Ming, Huang, Jen-Wei
المصدر: IEEE Transactions on Electron Devices; Sep2021, Vol. 68 Issue 9, p4431-4436, 6p
مصطلحات موضوعية: CAPACITANCE-voltage characteristics, THIN film transistors, ELECTRIC capacity, ELECTRIC fields
الشركة/الكيان: NATIONAL Institute of Standards & Technology (U.S.)
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4دورية أكاديمية
المؤلفون: Lin, Chih-Chih, Tai, Mao-Chou, Chang, Ting-Chang, Tsao, Yu-Ching, Wang, Yu-Xuan, Tsai, Yu-Lin, Tu, Hong-Yi, Lu, I-Nien, Tsai, Tsung-Ming, Huang, Jen-Wei
المصدر: IEEE Transactions on Electron Devices; Sep2020, Vol. 67 Issue 9, p3645-3649, 5p
مصطلحات موضوعية: ELECTRON traps, THIN film transistors
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5دورية أكاديمية
المؤلفون: Chen, Hong-Chih, Tsao, Yu-Ching, Chu, An-Kuo, Huang, Hui-Chun, Lai, Wei-Chih, Chen, Guan-Fu, Huang, Shin-Ping, Chang, Ting-Chang, Chen, Po-Hsun, Chen, Jian-Jie, Kuo, Chuan-Wei, Zhou, Kuan-Ju, Hung, Yang-Hao
المصدر: IEEE Electron Device Letters; Dec2019, Vol. 40 Issue 12, p1941-1944, 4p
مصطلحات موضوعية: TRANSISTORS, THRESHOLD voltage, ELECTRON traps, ELECTRIC fields, THIN film transistors, MANUFACTURING processes, QUANTUM gates
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6دورية أكاديمية
المؤلفون: Tu, Hong-Yi, Tsai, Tsung-Ming, Wu, Chia-Chuan, Tsao, Yu-Ching, Tai, Mao-Chou, Chang, Ting-Chang, Tsai, Yu-Lin, Huang, Shin-Ping, Zheng, Yu-Zhe, Wang, Yu-Xuan, Chen, Hong-Chih
المصدر: IEEE Electron Device Letters; Nov2019, Vol. 40 Issue 11, p1768-1771, 4p
مصطلحات موضوعية: GRAIN size, POLYCRYSTALLINE silicon, CRYSTAL grain boundaries, INDIUM gallium zinc oxide, LASER annealing, EXCIMER lasers, TRANSISTORS, THIN film transistors, HYDROGEN atom
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7دورية أكاديمية
المؤلفون: Huang, Shin-Ping, Shih, Yao-Kai, Chung, Yu-Hua, Chen, Wei-Han, Wang, Terry Tai-Jui, Zhang, Sheng-Dong, Chang, Ting-Chang, Chen, Po-Hsun, Tsao, Yu-Ching, Chen, Hong-Chih, Zheng, Yu-Zhe, Chu, Ann-Kuo, Shih, Yu-Shan, Wang, Yu-Xuan, Wu, Chia-Chuan
المصدر: IEEE Transactions on Electron Devices; Nov2019, Vol. 66 Issue 11, p4764-4767, 4p
مصطلحات موضوعية: HOT carriers, ELECTRON tunneling, ELECTRON traps, THIN film transistors, THRESHOLD voltage, PRESSURE swing adsorption process
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8دورية أكاديمية
المؤلفون: Huang, Shin-Ping, Chen, Po-Hsun, Chen, Hong-Chih, Zheng, Yu-Zhe, Chu, Ann-Kuo, Tsao, Yu-Ching, Shih, Yu-Shan, Wang, Yu-Xuan, Wu, Chia-Chuan, Lai, Wei-Chih, Chang, Ting-Chang
المصدر: IEEE Electron Device Letters; 10/1/2019, Vol. 40 Issue 10, p1638-1641, 4p
مصطلحات موضوعية: POLYCRYSTALLINE silicon, SILICON films, DEHYDROGENATION, ANNEALING of metals, THIN film transistors, RELIABILITY in engineering, DENSITY of states
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9دورية أكاديمية
المؤلفون: Tsai, Yu-Lin, Chien, Yu-Chieh, Chang, Ting-Chang, Tsao, Yu-Ching, Tai, Mao-Chou, Tu, Hong-Yi, Chen, Jian-Jie, Wang, Yu-Xuan, Zhou, Kuan-Ju, Shih, Yu-Shan, Lu, I-Nien, Huang, Hui-Chun
المصدر: IEEE Electron Device Letters; Sep2019, Vol. 40 Issue 9, p1455-1458, 4p
مصطلحات موضوعية: INDIUM gallium zinc oxide, COMPUTER engineering, TRANSISTORS, COMPUTER-aided design, THIN film transistors, ELECTRIC fields
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10دورية أكاديمية
المؤلفون: Tsao, Yu-Ching, Chang, Ting-Chang, Huang, Shin-Ping, Tsai, Yu-Lin, Chien, Yu-Chieh, Tai, Mao-Chou, Tu, Hong-Yi, Huang, Jen-Wei
المصدر: IEEE Transactions on Device & Materials Reliability; Jun2019, Vol. 19 Issue 2, p433-436, 4p