التفاصيل البيبلوغرافية
| العنوان: |
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD. |
| المؤلفون: |
Yuji Yamamoto, Peter Zaumseil, Giovanni Capellini, Markus Andreas Schubert, Anne Hesse, Marco Albani, Roberto Bergamaschini, Francesco Montalenti, Thomas Schroeder, Bernd Tillack |
| المصدر: |
Nanotechnology; 12/1/2017, Vol. 28 Issue 48, p1-1, 1p |
| مصطلحات موضوعية: |
SILICON compounds, SUPERLATTICES, CHEMICAL vapor deposition |
| مستخلص: |
Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness. [ABSTRACT FROM AUTHOR] |
|
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
