المؤلفون: İbrahimoğlu, Erhan, Kırkbınar, Mine, Çalışkan, Fatih, Tatlı, Zafer

مصطلحات موضوعية: Aluminum compounds, Energy gap, II-VI semiconductors, Interface states, Nanorods, Nucleation, Semiconductor diodes, Silicon, Silicon compounds, Wide band gap semiconductors, Band gap energy, Barrier heights, Electrical interface, Fabrication process, Interface layer, Interfaces state, Metal semiconductors, MIS structure, Thin-films, ZnO/p-Si, Zinc oxide

العلاقة: Physica B: Condensed Matter; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; İbrahimoğlu, E., Kırkbınar, M., Çalışkan, F., & Tatlı, Z. (2023). The effect of ZnO:Si3N4 nanocomposite interlayer on electrical properties and interface-states between metal-semiconductor in Al/p-si (MS) structures. Physica B: Condensed Matter, 665 doi:10.1016/j.physb.2023.415063; https://hdl.handle.net/20.500.14002/1999Test; 665; 2-s2.0-85162049280

الإتاحة: https://doi.org/20.500.14002/1999Test
https://doi.org/10.1016/j.physb.2023.415063Test
https://hdl.handle.net/20.500.14002/1999Test

المؤلفون: Sh.Kh., Daliev, F.A., Saparov

المصدر: Euroasian Journal of Semiconductors Science and Engineering

مصطلحات موضوعية: MIS structure, silicon, space charge region, pressure, temperature, deep levels

وصف الملف: application/pdf

العلاقة: https://uzjournals.edu.uz/semiconductors/vol3/iss2/4Test; https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1227&context=semiconductorsTest

الإتاحة: https://uzjournals.edu.uz/semiconductors/vol3/iss2/4Test
https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1227&context=semiconductorsTest

المؤلفون: Aroonratsameruang, Ponart, Pattanasattayavong, Pichaya, Dorcet, Vincent, Mériadec, Cristelle, Ababou-Girard, Soraya, Fryars, Stéphanie, Loget, Gabriel

المساهمون: Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Vidyasirimedhi Institute of Science and Technology Thaïlande (VISTEC), Synthèse Caractérisation Analyse de la Matière (ScanMAT), Université de Rennes (UR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Vidyasirimedhi Institute of Science and Technology

المصدر: ISSN: 1932-7447.

مصطلحات موضوعية: energy conversion, silicon, metal-insulator-semiconductor (MIS), oxygen evolution reaction, Prussian blue analogs, [CHIM.OTHE]Chemical Sciences/Other

العلاقة: hal-03000412; https://hal.science/hal-03000412Test; https://hal.science/hal-03000412/documentTest; https://hal.science/hal-03000412/file/Manuscript_JPCC_revised.pdfTest

الإتاحة: https://doi.org/10.1021/acs.jpcc.0c08971Test
https://hal.science/hal-03000412Test
https://hal.science/hal-03000412/documentTest
https://hal.science/hal-03000412/file/Manuscript_JPCC_revised.pdfTest

المساهمون: Barbour, J

المصدر: Conference: 185. Electrochemical Society meeting,San Francisco, CA (United States),22-27 May 1994; Other Information: PBD: [1994]

وصف الملف: Medium: ED; Size: 10 p.

الوصول الحر: http://www.osti.gov/scitech/servlets/purl/10162569Test

المؤلفون: Balcı E., Kınacı B., Çetinkaya Ç., Çokduygulular E., Ataşer T., Akın Sönmez N., Sağlam S.

مصطلحات موضوعية: Binding energy, Crystallinity, II-VI semiconductors, Metal analysis, Physical properties, Schottky barrier diodes, Selenium compounds, Silicon, Thermionic emission, Thin films, X ray photoelectron spectroscopy, Different thickness, Interfacial layer, Metal contacts, MIS structure, Morphological analysis, Performance, Schottky diodes, Si substrates, XPS analysis, ZnSe thin films, Surface roughness

العلاقة: Journal of Materials Science: Materials in Electronics; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://doi.org/10.1007/s10854-023-10690-6Test; https://hdl.handle.net/20.500.12831/19470Test; 34; 16; 2-s2.0-85161062105

الإتاحة: https://doi.org/10.1007/s10854-023-10690-6Test
https://doi.org/20.500.12831/19470Test
https://hdl.handle.net/20.500.12831/19470Test

المؤلفون: Daliev, Khojakbar Sultanovich, Daliev, Shahrukh Khozhakbarovich, Paluanova, Anifa Daryabayevna, Husanov, Zafarjon Murodovich

المصدر: Euroasian Journal of Semiconductors Science and Engineering

مصطلحات موضوعية: MIS - structure, heat treatment, irradiation, silicon, alloying, refractory element, impurity, tungsten, molybdenum

وصف الملف: application/pdf

العلاقة: https://uzjournals.edu.uz/semiconductors/vol1/iss5/9Test; https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1094&context=semiconductorsTest

الإتاحة: https://uzjournals.edu.uz/semiconductors/vol1/iss5/9Test
https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1094&context=semiconductorsTest

المؤلفون: Altunışık, Celal

المساهمون: Güllü, Ömer, Batman Üniversitesi Lisansüstü Eğitim Enstitüsü Fizik Anabilim Dalı

مصطلحات موضوعية: Silisyum, Silicon, Arayüzey Hal Yoğunluğu, MIS Diode, Interfacial State Density, MIS Diyot, Congo Red

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=od______3539::2ca7eccf955821a7fe3b28e3aa3238abTest
https://hdl.handle.net/20.500.12402/4160Test

المؤلفون: Altunışık, Celal

المساهمون: Güllü, Ömer, Batman Üniversitesi Lisansüstü Eğitim Enstitüsü Fizik Anabilim Dalı, orcid:0000-0003-1449-9976

مصطلحات موضوعية: Silisyum, MIS Diyot, Congo Red, Arayüzey Hal Yoğunluğu, Silicon, MIS Diode, Interfacial State Density

وصف الملف: application/pdf

العلاقة: Tez; Altunışık, C. (2022). Al/Congo Red/P-Tipi Si yarıiletken diyotlarının elektronik ve arayüzey özellikleri üzerine gama ışınlamasının etkisi. (Yayınlanmamış Yüksek Lisans Tezi). Batman Üniversitesi Lisansüstü Eğitim Enstitüsü, Batman.; https://hdl.handle.net/20.500.12402/4160Test

الإتاحة: https://doi.org/20.500.12402/4160Test
https://hdl.handle.net/20.500.12402/4160Test

المؤلفون: Sung-Wei Huang, Jenn-Gwo Hwu

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1041-1048 (2021)

مصطلحات موضوعية: Materials science, Silicon, business.industry, chemistry.chemical_element, capacitance analysis, Capacitance, Signal, Metal-insulator-semiconductor (MIS) tunnel diodes, Electronic, Optical and Magnetic Materials, TK1-9971, Semiconductor, chemistry, Logic gate, Optoelectronics, Transient (oscillation), Electrical engineering. Electronics. Nuclear engineering, Electrical and Electronic Engineering, business, Metal gate, transient characteristics, Biotechnology, Diode

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad9705596bf4e74b02122683a8b4b9baTest
https://ieeexplore.ieee.org/document/9590486Test/

المؤلفون: García Hernansanz, Rodrigo, García Hemme, Eric, Montero Álvarez, Daniel, Prado Millán, Álvaro del, Olea Ariza, Javier, San Andrés Serrano, Enrique, Mártil de la Plaza, Ignacio, González Díaz, Germán

مصطلحات موضوعية: Silicon, Photovoltaic cells, Substrates, Absorption, Surface treatment, Plasmas, Temperature, Measurement minority lifetime, Electron cyclotron resonance chemical vapor deposition (ECR-CVD), heterojunction, interface defects, metal insulator semiconductor (MIS) devices, Electricidad, Electrónica (Física), 2202.03 Electricidad

الوقت: 537

وصف الملف: application/pdf

العلاقة: TEC 2013-41730-R; TEC2016-75099-R; MADRID-PV (2013/MAE-2780); BES-2014-067585; https://hdl.handle.net/20.500.14352/24640Test; http://dx.doi.org/10.1109/JPHOTOV.2016.2581487Test; http://ieeexplore.ieee.orgTest/

الإتاحة: https://doi.org/20.500.14352/24640Test
https://doi.org/10.1109/JPHOTOV.2016.2581487Test
https://hdl.handle.net/20.500.14352/24640Test
http://ieeexplore.ieee.orgTest/