التفاصيل البيبلوغرافية
| العنوان: |
Gallium nitride tunneling field-effect transistors exploiting polarization fields. |
| المؤلفون: |
Chaney, Alexander, Turski, Henryk, Nomoto, Kazuki, Hu, Zongyang, Encomendero, Jimy, Rouvimov, Sergei, Orlova, Tatyana, Fay, Patrick, Seabaugh, Alan, Xing, Huili Grace, Jena, Debdeep |
| المصدر: |
Applied Physics Letters; 2/18/2020, Vol. 116 Issue 7, p1-5, 5p, 3 Diagrams, 4 Graphs |
| مصطلحات موضوعية: |
TUNNEL field-effect transistors, FIELD-effect transistors, QUANTUM tunneling, INDIUM gallium nitride, GALLIUM nitride, QUANTUM tunneling composites |
| مستخلص: |
This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased compared to the gated homojunction diode. This leads to an increased drain current of 57 μA/μm and a reduced subthreshold swing of 102 mV/dec, from 240 mV/dec. However, trap assisted tunneling prevents devices from realizing subthreshold slopes below the Boltzmann limit of 60 mV/dec. Nevertheless, this work shows the capability of tunnel field effect transistors to be realized in GaN by taking advantage of the spontaneous and piezoelectric polarization in the III-N material system. [ABSTRACT FROM AUTHOR] |
|
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
