المؤلفون: Guglielmo Fortunato, Luigi Mariucci, F. Tramontana, Matteo Rapisarda, Salvatore Leonardi, A. Pecora, Antonio Valletta, Claudia Caligiore, E. Fontana

المصدر: Thin solid films
517 (2009): 6353–6357. doi:10.1016/j.tsf.2009.02.067
info:cnr-pdr/source/autori:Valletta A; Rapisarda M; Mariucci L; Pecora A; Fortunato G; Caligiore C; Fontana E; Tramontana F; Leonardi S/titolo:Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors/doi:10.1016%2Fj.tsf.2009.02.067/rivista:Thin solid films (Print)/anno:2009/pagina_da:6353/pagina_a:6357/intervallo_pagine:6353–6357/volume:517
E-MRS 2008 Spring Meeting (May 26-30, 2008, Strasbourg, France), Strasburgo, 2008
info:cnr-pdr/source/autori:Valletta A., M. Rapisarda, L. Mariucci, A. Pecora, G. Fortunato, C. Caligiore, E. Fontana, F. Tramontana and S. Leonardi/congresso_nome:E-MRS 2008 Spring Meeting (May 26-30, 2008, Strasbourg, France)/congresso_luogo:Strasburgo/congresso_data:2008/anno:2008/pagina_da:/pagina_a:/intervallo_pagine

مصطلحات موضوعية: Materials science, Dopant, Channel length modulation, business.industry, Low-temperature polycrystalline silicon, Metals and Alloys, Surfaces and Interfaces, Dopant Activation, engineering.material, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Polycrystalline silicon, thin film transistor, Effective channel length, Thin-film transistor, Parasitic element, MOSFET, Materials Chemistry, engineering, Optoelectronics, Non self-aligned process, business, Parasitic resistance

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef5efcedefe8178f204eb9e193c88eaeTest
https://doi.org/10.1016/j.tsf.2009.02.067Test

المؤلفون: Claudia Caligiore, F. Tramontana, Guglielmo Fortunato, Matteo Rapisarda, A. Pecora, Luigi Mariucci, Antonio Valletta, E. Fontana, Salvatore Leonardi

المصدر: Solid-State Electronics. 52:406-411

مصطلحات موضوعية: Materials science, Silicon, business.industry, Gate dielectric, Electrical engineering, chemistry.chemical_element, Time-dependent gate oxide breakdown, engineering.material, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Ion implantation, Polycrystalline silicon, chemistry, Gate oxide, Thin-film transistor, Materials Chemistry, engineering, Optoelectronics, Electrical and Electronic Engineering, business, Metal gate

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::4bec634fa333d650dfe7bde6024d596bTest
https://doi.org/10.1016/j.sse.2007.10.009Test

المؤلفون: S.D. Brotherton, Antonio Valletta, Matteo Rapisarda, Luigi Mariucci, Guglielmo Fortunato, A. Bonfiglietti, Alessandro Pecora

المصدر: ECS Transactions. 8:211-216

مصطلحات موضوعية: Materials science, Polycrystalline silicon, Thin-film transistor, engineering, Grain boundary, Composite material, engineering.material

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::484d1c4ef96aeb7ac3865ef79b93341bTest
https://doi.org/10.1149/1.2767310Test

المؤلفون: Antonio Valletta, Luca Maiolo, M. Cuscunà, Alessandro Pecora, Matteo Rapisarda, Luigi Mariucci, S.D. Brotherton, Guglielmo Fortunato

المصدر: ECS transactions 37 (2011): 3–14. doi:10.1149/1.3600718
info:cnr-pdr/source/autori:Fortunato, Guglielmo; Cuscunà, Massimo; Maiolo, Luca; Mariucci, Luigi; Rapisarda, Matteo; Pecora, Alessandro; Valletta, Antonio; Brotherton, Stan D./titolo:Short Channel effects and drain field relief architectures in polysilicon TFTs/doi:10.1149%2F1.3600718/rivista:ECS transactions/anno:2011/pagina_da:3/pagina_a:14/intervallo_pagine:3–14/volume:37

مصطلحات موضوعية: Materials science, business.industry, Polysilicon depletion effect, Electrical engineering, Short-channel effect, engineering.material, Active matrix, law.invention, Polycrystalline silicon, Thin-film transistor, law, engineering, Optoelectronics, business, Septic drain field, Communication channel, Electronic circuit

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::824abc9ad4063b95874a5c7e2d7be6baTest
http://www.scopus.com/record/display.url?eid=2-s2.0-84856822021&origin=inwardTest

المؤلفون: Antonio Valletta, Luigi Mariucci, Matteo Rapisarda, A. Bonfiglietti, Stanley D. Brotherton, Guglielmo Fortunato

المصدر: Journal of applied physics 101 (2007): 094502. doi:10.1063/1.2717259
info:cnr-pdr/source/autori:Valletta A; Bonfiglietti A; Rapisarda M; Mariucci L; Fortunato G; Brotherton S D;/titolo:Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices/doi:10.1063%2F1.2717259/rivista:Journal of applied physics/anno:2007/pagina_da:094502/pagina_a:/intervallo_pagine:094502/volume:101

مصطلحات موضوعية: Materials science, Silicon, Condensed matter physics, thin film transistors, General Physics and Astronomy, chemistry.chemical_element, grain boundaries, hole traps, engineering.material, Thermal conduction, Grain size, Polycrystalline silicon, chemistry, Thin-film transistor, electron traps, Perpendicular, engineering, Grain boundary, solidification, Anisotropy

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93d3a87790c037081f60ad8f9e6271f4Test
https://doi.org/10.1063/1.2717259Test