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1مؤتمر
المؤلفون: Schlaak, W., Mekonnen, G.G., Bach, H.-G., Bornholdt, C., Schramm, C., Umbach, A., Steingrüber, R., Seeger, A., Unterborsch, G., Passenberg, W., Wolfram, P.
مصطلحات موضوعية: forward error correction, integrated optoelectronics, optical receivers, photodetectors, photodiodes, Gbit/s eye pattern, photoreceiver oeic, monolithically integrated spot size converter, InP-based monolithically integrated photoreceiver, spot size converter, total receiver conversion gain, extended bandwidth, error corrected Gbit/s application, 40 Gbit/s, 47 GHz
الوقت: 621
العلاقة: Optical Fiber Communication Conference (OFC) 2001; OFC 2001, Optical Fiber Communication Conference and Exhibit. Technical digest. Postconference edition; https://publica.fraunhofer.de/handle/publica/338734Test
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2مؤتمر
المؤلفون: Bach, H.G., Schlaak, W., Mekonnen, G.G., Umbach, A., Schramm, C., Unterborsch, G., Passenberg, W.
مصطلحات موضوعية: HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated circuit packaging, integrated optoelectronics, mmic amplifiers, optical receivers, photodiodes, time division multiplexing, travelling wave amplifiers, InP-based photoreceiver oeics, 40 gb/s tdm systems, side-illuminated photodiodes, amplifiers, traveling wave concept, packaged oeics, pig-tailed modules, waveguide-integrated photodiode, HEMT-based amplifier, photoreceiver oeics, traveling wave amplifiers, 40 GHz, 40 Gbit/s, 1.55 micron, GaInAsP-InP
الوقت: 621
العلاقة: Conference "Integrated Photonics Research" 2000; Integrated Photonics Research 2000. Postconference edition; https://publica.fraunhofer.de/handle/publica/336763Test
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3مؤتمر
المؤلفون: Schramm, C., Mekonnen, G.G., Bach, H.-G., Unterborsch, G., Schlaak, W., Ebert, W., Wolfram, P.
مصطلحات موضوعية: high-speed optical techniques, iii-v semiconductors, indium compounds, integrated optoelectronics, optical receivers, photodetectors, photodiodes, conducting interface layer, integrated InP photoreceivers, high-speed photoreceivers, monolithic integration, waveguide layer stack, interface conduction, photoreceiver elements, high-frequency gain, integrated amplifiers, fabrication process, epitaxial growth, waveguide, photodiode, amplifier, inp
الوقت: 621
العلاقة: International Conference on Indium Phosphide and Related Materials (IPRM) 2000; International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings; https://publica.fraunhofer.de/handle/publica/336741Test
الإتاحة: https://doi.org/10.1109/ICIPRM.2000.850319Test
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4مؤتمر
المؤلفون: Bach, H.-G., Schlaak, W., Unterborsch, G., Mekonnen, G.G., Jacumeit, G., Ziegler, R., Steingrüber, R., Seeger, A., Engel, T., Umbach, A., Schramm, C., Passenberg, W.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, modules, optical fibre networks, optical receivers, packaging, photodiodes, time division multiplexing, Gbit/s photoreceiver modules, InP-oeics, nrz coded tdm system applications, rz coded tdm system applications, monolithic integration, waveguide-integrated photodiode, traveling-wave amplifier, 40 Gbit/s, 1.55 mum, inp
الوقت: 621
العلاقة: Optical Fiber Communication Conference (OFC) 1999; International Conference on Integrated Optics and Optical Fiber Communication (IOOC) 1999; OFC IOOC '99, Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication. Technical digest. Postconference edition. Vol.1; https://publica.fraunhofer.de/handle/publica/334131Test
الإتاحة: https://doi.org/10.1109/OFC.1999.767809Test
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5مؤتمر
المؤلفون: Unterborsch, G., Schramm, C., Hubsch, R., Mekonnen, G.G., Seeger, A., Trommer, D., Umbach, A.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, microwave photonics, optical couplers, optical receivers, photodiodes, submillimetre wave mixers, 1.55 mu m balanced mixer receiver oeic, GHz bandwidth, balanced mixer receiver oeic, inp, integrated biasing network, cut-off frequency, common-mode rejection ratio, 15 GHz
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1999; 25th European Conference on Optical Communication, ECOC '99, conference and exhibition. Vol.1:Regular and invited papers; https://publica.fraunhofer.de/handle/publica/334360Test
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6مؤتمر
المؤلفون: Bach, H.G., Schlaak, W., Mekonnen, G.G., Steingrüber, R., Seeger, A., Engel, T., Passenberg, W., Umbach, A., Schramm, C., Unterborsch, G.
مصطلحات موضوعية: electron beam lithography, HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated circuit technology, integrated optoelectronics, optical fabrication, optical receivers, photodiodes, Gbit/s InP-based photoreceiver oeic, gain flattened transfer characteristics, InP-based photoreceiver oeic, bit/s data rate applications, waveguide-integrated photodiode, gain flattened distributed amplifier, HEMTs, e-beam lithography, HEMT ic, 50 Gbit/s, inp
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1998; European Exhibition on Optical Communication (EEOC) 1998; EEOC '98. 24th European Conference on Optical Communication. Vol. 1; https://publica.fraunhofer.de/handle/publica/331763Test
الإتاحة: https://doi.org/10.1109/ECOC.1998.732433Test
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7مؤتمر
المؤلفون: Feiste, U., Kaiser, R., Mekonnen, G.G., Schramm, C., Trommer, D., Unterborsch, G.
مصطلحات موضوعية: electron device noise, iii-v semiconductors, indium compounds, integrated optoelectronics, junction gate field effect transistors, optical communication equipment, photodiodes, receivers, semiconductor device models, semiconductors, bias dependence, rf characterization, optical receivers, signal measurement, noise measurement, noise characterization, monolithically integrated receiver, optoelectronic integrated circuit, oeic, optical waveguide, gain-bandwidth product, bias operation, receiver input noise, jfet channel noise, equivalent circuit model, optical sensitivity, bit rate, 576 mbit/s, InP substrates
الوقت: 621
العلاقة: International Conference Indium Phosphide and Related Materials 1991; Third International Conference Indium Phosphide and Related Materials; https://publica.fraunhofer.de/handle/publica/319346Test
الإتاحة: https://doi.org/10.1109/ICIPRM.1991.147400Test
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8مؤتمر
المؤلفون: Trommer, D., Feiste, U., Hochheim, S., Kaiser, R., Passenberg, W., Reier, F., Schramm, C., Umbach, A., Unterborsch, G.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, junction gate field effect transistors, optical communication equipment, optical waveguide components, p-i-n diodes, photodiodes, receivers, receiver oeic, p-i-n photodiode, waveguide integrated pinfet, waveguide, pin-photodiode, junction field effect transistor, jfet, resistor, current gain, cutoff frequency, 320 mhz, 11 db, inp
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1990; ECOC 90 Amsterdam. Vol.3: Post-deadline papers; https://publica.fraunhofer.de/handle/publica/318127Test
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9دورية أكاديمية
المؤلفون: Mekonnen, G.G., Schlaak, W., Bach, H.-G., Steingrüber, R., Seeger, A., Enger, Th., Passenberg, W., Umbach, A., Schramm, C., Unterborsch, G., Waasen, S. van
مصطلحات موضوعية: HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated optoelectronics, optical receivers, photodiodes, GHz bandwidth, InP-based photoreceiver oeic, data rates, photoreceiver optoelectronic integrated circuit, inp, GHz waveguide-integrated photodiode, distributed amplifier, high-electron mobility transistors, system experiment, return-to-zero coded optical input signal, good quality, eye pattern, 37 GHz, 39.5 GHz, 40 Gbit/s
الوقت: 621, 535
العلاقة: IEEE Photonics Technology Letters; https://publica.fraunhofer.de/handle/publica/196094Test
الإتاحة: https://doi.org/10.1109/68.740722Test
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10دورية أكاديمية
المؤلفون: Bornholdt, C., Trommer, D., Unterborsch, G., Bach, H.G., Kappe, F., Passenberg, W., Rehbein, W., Reier, F., Schramm, C., Stenzel, R., Umbach, A., Venghaus, H., Weinert, C.M.
مصطلحات موضوعية: field effect integrated circuits, gallium arsenide, iii-v semiconductors, indium compounds, infrared detectors, integrated optoelectronics, multiplexing equipment, optical communication equipment, photodiodes, receivers, integrated wavelength demultiplexer receiver, monolithic integration, iii-v semiconductor, detector stage, photodiode, field-effect transistor, load resistor, bidirectional transmission link, bit error rate, sensitivity, intrinsic sensitivity, 1.3 micron, 1.55 micron, 576 mbit/s, inp, GaInAsP-InP
الوقت: 621
العلاقة: Applied Physics Letters; https://publica.fraunhofer.de/handle/publica/182263Test
الإتاحة: https://doi.org/10.1063/1.107460Test
https://publica.fraunhofer.de/handle/publica/182263Test