دورية أكاديمية
Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer
| العنوان: | Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer |
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| المؤلفون: | Barhate, Viral N., Agrawal, Khushabu S., Patil, Vilas S., Patil, Sumit R., Mahajan, Ashok M. |
| المساهمون: | Council of Scientific and Industrial Research (CSIR), New Delhi, University Grant Commission (UGC), New Delhi, Special Assistance Programme for Departmental Research Support, Organic Photovoltaic Laboratory, School of Physical Sciences, KBC North Maharashtra University, Jalgaon |
| المصدر: | Materials Science in Semiconductor Processing ; volume 117, page 105161 ; ISSN 1369-8001 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2020 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| مصطلحات موضوعية: | Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.mssp.2020.105161 |
| الإتاحة: | https://doi.org/10.1016/j.mssp.2020.105161Test https://api.elsevier.com/content/article/PII:S1369800120300846?httpAccept=text/xmlTest https://api.elsevier.com/content/article/PII:S1369800120300846?httpAccept=text/plainTest |
| حقوق: | https://www.elsevier.com/tdm/userlicense/1.0Test/ |
| رقم الانضمام: | edsbas.B333AB7D |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.mssp.2020.105161 |
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