دورية أكاديمية

Role of Fe-Doping Effect in 2-D MoS2 Magnetic Semiconductor.

التفاصيل البيبلوغرافية
العنوان: Role of Fe-Doping Effect in 2-D MoS2 Magnetic Semiconductor.
المؤلفون: Kao, Cheng-Wei, Yang, Chun-Chuen, Kao, Hao-Che, Tung, Yung-Hsiang, Hsu, Ting-Wei, Wu, Wei-Chun, Lin, Kuen-Song
المصدر: IEEE Transactions on Magnetics. Nov2018, Vol. 54 Issue 11, p1-3. 3p.
مصطلحات موضوعية: IRON, DOPING agents (Chemistry), MAGNETIC semiconductors, NANOFABRICATION, X-ray diffraction, ACTIVATION energy
مستخلص: Two 2-D Mo1–xFexS2 ($x = 0, 0.01$) nanosheets were fabricated by the hydrothermal method. X-ray diffraction shows both samples are formed in hexagonal $\text{P}6_{3}$ /mmc (2H structure) phase with 2-D morphology. Raman spectra displayed that the peak widths were broadening in the iron-doped sample. AC conductivity experiments revealed that both samples obeyed the small polaron hopping model. The activation energies of $x = 0$ are 0.121(3) and 0.066(1) eV above and below 200 K. Similarly, two different activation energies, 0.140(2) and 0.082(1) eV above and below 240 K are also found in $x = 0.01$ sample. The effect of iron-doped may raise the activation energies of small polaron. Diamagnetism and paramagnetism were observed in pure MoS2 and iron-doped sample, respectively. Magnetic hysteresis experiments show no loop in both samples, which is evidence that there was not any magnetic domain formed. For $x = 0.01$ sample, the Brillouin function is conducted to fit the M–H curve. The fit $< mu _{z}>$ of the $x = 0.01$ sample is about 0.038(1) $\mu _{B}/f. u$., which matched the value of 1% Fe4+ ($S = 2$) ion-doped. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Business Source Index
الوصف
تدمد:00189464
DOI:10.1109/TMAG.2018.2829267