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1مؤتمر
المؤلفون: Schlaak, W., Engel, T., Umbach, A., Passenberg, W., Steingrüber, R., Seeger, A., Schramm, C., Mekonnen, G.G., Unterborsch, G., Bach, H.-G., Bimberg, D.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, mmic, optical receivers, ultrafast photoreceivers, optoelectronic microwave monolithic integrated circuits, oemmic, optimization, narrowband photoreceivers, broadband photoreceivers, oeic fabrication technology, 38 GHz, 60 GHz, 1.55 micron, 40 Gbit/s, 155 mbit/s, inp
الوقت: 621, 667
العلاقة: International Symposium on Compound Semiconductors (ISCS) 1999; Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors; https://publica.fraunhofer.de/handle/publica/336992Test
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2مؤتمر
المؤلفون: Bach, H.-G., Schlaak, W., Mekonnen, G.G., Seeger, A., Steingrüber, R., Schramm, C., Jacumeit, G., Ziegler, R., Umbach, A., Unterborsch, G., Passenberg, W., Ebert, W., Eckardt, T.
مصطلحات موضوعية: delays, HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated circuit packaging, integrated optoelectronics, light scattering, modules, optical receivers, p-i-n photodiodes, InP-based pin twa photoreceivers, low group delay scatter, GHz bandwidth, gb/s photoreceiver oeics, thermo-stable module packaging, tdm applications, waveguide-integrated photodiode, traveling wave amplifier, group delay scatter, 40 Gbit/s, 40 GHz, inp
الوقت: 621
العلاقة: Optical Fiber Communication Conference (OFC) 2000; Optical Fiber Communication Conference 2000. Technical digest. Postconference edition; https://publica.fraunhofer.de/handle/publica/336750Test
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3مؤتمر
المؤلفون: Mekonnen, G.G., Schlaak, W., Bach, H.-G., Engel, T., Schramm, C., Umbach, A.
مصطلحات موضوعية: distributed amplifiers, HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated circuit packaging, integrated optoelectronics, modules, optical receivers, p-i-n photodiodes, photodetectors, InP photoreceiver oeics, high-speed optical transmission systems, Gbit/s telecommunication systems, monolithic integration, high-speed performance, small size, broadband photoreceiver oeic, waveguide-integrated gainAs p-i-n photodetector, distributed amplifier, high-electron mobility transistors, heterodyne-measurement setup, packaged, gain ripple, 40 Gbit/s, 1.55 mum, 0.25 mum, 100 GHz, 250 GHz, 40 GHz, inp
الوقت: 621
العلاقة: Conference "Optoelectronic Integrated Circuits" 2000; Optoelectronic integrated circuits IV; https://publica.fraunhofer.de/handle/publica/336754Test
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4مؤتمر
المؤلفون: Schramm, C., Mekonnen, G.G., Bach, H.-G., Unterborsch, G., Schlaak, W., Ebert, W., Wolfram, P.
مصطلحات موضوعية: high-speed optical techniques, iii-v semiconductors, indium compounds, integrated optoelectronics, optical receivers, photodetectors, photodiodes, conducting interface layer, integrated InP photoreceivers, high-speed photoreceivers, monolithic integration, waveguide layer stack, interface conduction, photoreceiver elements, high-frequency gain, integrated amplifiers, fabrication process, epitaxial growth, waveguide, photodiode, amplifier, inp
الوقت: 621
العلاقة: International Conference on Indium Phosphide and Related Materials (IPRM) 2000; International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings; https://publica.fraunhofer.de/handle/publica/336741Test
الإتاحة: https://doi.org/10.1109/ICIPRM.2000.850319Test
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5مؤتمر
المؤلفون: Bach, H.-G., Schlaak, W., Unterborsch, G., Mekonnen, G.G., Jacumeit, G., Ziegler, R., Steingrüber, R., Seeger, A., Engel, T., Umbach, A., Schramm, C., Passenberg, W.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, modules, optical fibre networks, optical receivers, packaging, photodiodes, time division multiplexing, Gbit/s photoreceiver modules, InP-oeics, nrz coded tdm system applications, rz coded tdm system applications, monolithic integration, waveguide-integrated photodiode, traveling-wave amplifier, 40 Gbit/s, 1.55 mum, inp
الوقت: 621
العلاقة: Optical Fiber Communication Conference (OFC) 1999; International Conference on Integrated Optics and Optical Fiber Communication (IOOC) 1999; OFC IOOC '99, Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication. Technical digest. Postconference edition. Vol.1; https://publica.fraunhofer.de/handle/publica/334131Test
الإتاحة: https://doi.org/10.1109/OFC.1999.767809Test
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6مؤتمر
المؤلفون: Unterborsch, G., Schramm, C., Hubsch, R., Mekonnen, G.G., Seeger, A., Trommer, D., Umbach, A.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, microwave photonics, optical couplers, optical receivers, photodiodes, submillimetre wave mixers, 1.55 mu m balanced mixer receiver oeic, GHz bandwidth, balanced mixer receiver oeic, inp, integrated biasing network, cut-off frequency, common-mode rejection ratio, 15 GHz
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1999; 25th European Conference on Optical Communication, ECOC '99, conference and exhibition. Vol.1:Regular and invited papers; https://publica.fraunhofer.de/handle/publica/334360Test
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7مؤتمر
المؤلفون: Bach, H.G., Schlaak, W., Mekonnen, G.G., Steingrüber, R., Seeger, A., Engel, T., Passenberg, W., Umbach, A., Schramm, C., Unterborsch, G.
مصطلحات موضوعية: electron beam lithography, HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated circuit technology, integrated optoelectronics, optical fabrication, optical receivers, photodiodes, Gbit/s InP-based photoreceiver oeic, gain flattened transfer characteristics, InP-based photoreceiver oeic, bit/s data rate applications, waveguide-integrated photodiode, gain flattened distributed amplifier, HEMTs, e-beam lithography, HEMT ic, 50 Gbit/s, inp
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1998; European Exhibition on Optical Communication (EEOC) 1998; EEOC '98. 24th European Conference on Optical Communication. Vol. 1; https://publica.fraunhofer.de/handle/publica/331763Test
الإتاحة: https://doi.org/10.1109/ECOC.1998.732433Test
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8مؤتمر
المؤلفون: Bach, H.-G., Umbach, A., Unterborsch, G., Passenberg, W., Mekonnen, G.G., Schlaak, W., Schramm, C., Ebert, W., Wolfram, P., Waasen, S. van, Bertenburg, R.M., Janssen, G., Reuter, R., Auer, U., Tegude, F.-J.
مصطلحات موضوعية: aluminium compounds, gallium arsenide, HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated optics, integrated optoelectronics, optical receivers, optical waveguides, p-i-n photodiodes, time division multiplexing, ultrafast GaInAs/AlInAs/InP photoreceiver, waveguide architecture, InP-based photoreceiver oeic, bandwidth, pin-photodiode, integrated optical waveguide, coplanar travelling wave amplifier, HEMT ics, 27 GHz, inp, GaInAs-AlInAs-InP
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1996; European Exhibition on Optical Communication (EEOC) 1996; 22nd European Conference on Optical Communication 1996. Vol.1: Regular and invited papers; https://publica.fraunhofer.de/handle/publica/327384Test
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9مؤتمر
المؤلفون: Umbach, A., Schramm, C., Bottcher, J., Unterborsch, G.
مصطلحات موضوعية: aluminium compounds, gallium arsenide, high electron mobility transistors, iii-v semiconductors, indium compounds, ohmic contacts, semiconductor technology, buried n-GaInAs layers, GaInAs/AlInAs-HEMTs, parasitic elements, gate capacitance, series resistances, fabrication, Si-doped GaInAs cap, AlInAs barrier layer, InP
الوقت: 621
العلاقة: International Conference on Indium Phosphide and Related Materials (IPRM) 1994; Sixth International Conference on Indium Phosphide and Related Materials 1994. Proceedings; https://publica.fraunhofer.de/handle/publica/323519Test
الإتاحة: https://doi.org/10.1109/ICIPRM.1994.328196Test
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10مؤتمر
المؤلفون: Trommer, D., Feiste, U., Hochheim, S., Kaiser, R., Passenberg, W., Reier, F., Schramm, C., Umbach, A., Unterborsch, G.
مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optoelectronics, junction gate field effect transistors, optical communication equipment, optical waveguide components, p-i-n diodes, photodiodes, receivers, receiver oeic, p-i-n photodiode, waveguide integrated pinfet, waveguide, pin-photodiode, junction field effect transistor, jfet, resistor, current gain, cutoff frequency, 320 mhz, 11 db, inp
الوقت: 621
العلاقة: European Conference on Optical Communication (ECOC) 1990; ECOC 90 Amsterdam. Vol.3: Post-deadline papers; https://publica.fraunhofer.de/handle/publica/318127Test