-
1دورية أكاديمية
المؤلفون: Lian Zhang, Rong Wang, Zhe Liu, Zhe Cheng, Xiaodong Tong, Jianxing Xu, Shiyong Zhang, Yun Zhang, Fengxiang Chen
المصدر: Materials, Vol 14, Iss 18, p 5339 (2021)
مصطلحات موضوعية: InGaN, hole, interstitial Mg, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
-
2
المؤلفون: Zhe Cheng, Rong Wang, Zhe Liu, Feng-Xiang Chen, Xiaodong Tong, Yun Zhang, Lian Zhang, Jianxing Xu, Shiyong Zhang
المصدر: Materials
Volume 14
Issue 18
Materials, Vol 14, Iss 5339, p 5339 (2021)مصطلحات موضوعية: Electron mobility, Technology, Materials science, Analytical chemistry, chemistry.chemical_element, Chemical vapor deposition, hole, Article, Vacancy defect, General Materials Science, Metalorganic vapour phase epitaxy, Microscopy, QC120-168.85, InGaN, Doping, QH201-278.5, Limiting, Engineering (General). Civil engineering (General), Nitrogen, interstitial Mg, TK1-9971, chemistry, Descriptive and experimental mechanics, First principle, Electrical engineering. Electronics. Nuclear engineering, TA1-2040
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f20ae07e49c7d412b90cf16a101c826bTest